laser annealing 中文意思是什麼
laser annealing
解釋
激光退火-
Influence of laser annealing on electrical properties of hgcdte
激光退火對碲鎘汞電性能的影響 -
Laser annealing equipment
激光退火裝置 -
The main topic of this thesis is to deposit the lacamno3 films using the pulsed laser deposition ( pld ) technique, and to improve the properties of the films through a serials of processes including the post annealing treatments. at last, the relation between the physical properties and the film making processes of the materials are discussed and some possible applications explored
本論文的任務就是利用脈沖激光沉積lacamno _ 3薄膜，並通過退火等一系列工藝處理提高薄膜性質，最終製作測輻射熱儀的敏感元件，同時也對材料的物性展開討論，以探尋更多的應用。 -
As a result 4 the rising annealing temperature induces si02 phase to form, also ivolves the formation of a si phase. in high - temperature - annealed sio ~, films the excess silicon atoms are present as si - si4 tetrahedra, randomly dispersed in the amorphous si02 matrix. photoluminescent spectra were observed for the samples excided by the laser whose wavelength is 365nm. the pl peak is located at about 445nm, which dose n ' t shift as the annealing temperature changes. as the annealing temperature is raised, the luminescent intensity increases. the phenomena suggest that the si - o - si bond as a defect center which is broken down by the stress at the si nc / si02 interface is the primary source of blue luminescence
這個陡的界面由於明顯的晶格結構的差別而有較大的應力。界面的形成伴隨著界面發光中心的增加，同時pl強度在l戶800有一個大的增強。這個結果提示我們，界面上h 0 s工鍵斷裂形成的nbohc應是藍光發射的主要原因。 -
Because p - si is of more special characteristics, comparing to a - si and c - si, firstly, i set forth electrical features of p - si film and acknowledge profoundly electrical mechanism of p - si film. then three parameters of laser annealing, including laser frequency -, accepted - pulse - times and laser power density are studied how to influence crystallization of p - si
因為多晶硅和非晶硅及晶體硅相比具有更獨特的特點，所以我們先闡述了多晶硅薄膜的電學特點，對多晶硅的導電機理有了深刻的了解；然後研究了激光頻率、受光次數和激光功率密度三個參數對晶化多晶硅的影響。 -
On the basis of metal induced crystallization ( mic ) and ela, we have proposed a new method of metal induced excimer laser annealing ( mi - ela )
在金屬誘導法制備多晶硅和激光晶化法制備多晶硅的基礎上，我們提出了一種新的多晶硅晶化法?金屬誘導下激光晶化法。
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