lateral diffusion 中文意思是什麼
lateral diffusion
解釋
側向擴散-
The axial and lateral spread of fluid has been likened to and accounted for by a diffusion-type model.
流體在軸向和徑向的散布，已與一個擴散模型聯系起來並用後者加以說明。 -
The lateral diffusion of the photo - carrier in photoconductor layer is one of the important factors of affecting the resolution of lclv
液晶光閥的解析度與許多因素有關，而光導層光生載流子的橫向擴散則是其中的重要因素之一。 -
These morphological transformation were concluded to be caused by lateral diffusion of pic molecules on the mica surface
從實驗結果的分析，得出j -聚集體形貌的改變是由於分子在雲母表層的擴散引起的。 -
Pathological changes of amyotrophic lateral sclerosis with in vivo magnetic resonance spectrum and diffusion tensor imagings
在體磁共振波譜及擴散張力成像觀察肌萎縮性側索硬化的病理變化的研究 -
It will be known from the obtained expression of the resolution of photoconductor that the column microstructure is benefit to reduce the carrier diffusion in the lateral direction and increase the resolution of the photoconductor
這種各向異性的柱狀結構復合光導膜有利於減小光生載流子的橫向擴散長度，從而可以提高液晶光閥光導層的解析度。 -
The principle and the application of liquid crystal light valve ( lclv ) and the development of the photoconductor of lclv have been reviewed in this paper. the growth mechanism of amorphous silicon film is analyzed. the resolution of the photoconductor that is affected by the lateral diffusion of the photo - carrier in photoconductor layer is also analyzed
本文介紹了液晶光閥光導層的發展、液晶光閥的工作原理及應用，分析了非晶硅薄膜的生長機制以及載流子的橫向擴散對解析度的影響，詳細研究了nc - si a - si ： h柱狀結構復合光導層液晶光閥的制備工藝。 -
The transfer of the carrier in photoconductor is anisotropy owing to the column structure of the film is anisotropy. on the basis of the new concept suggested in this paper, the maximum diffusion length in the lateral direction of the photo - carrier in the photoconductor ( which is related to the resolution of lclv directly ) as function of conductivities of both in lateral and normal directions in the film can be obtained as the expression as following. the nc - si / a - si : h photoconductor of lclv deposited and crystallized at low temperature of exactly 250 c stack column structure by al inducing a - si : h
本文根據柱狀結構存在各向異性的特點，並根據半導體物理知識，推出光導層光生載流子橫向最大擴散長度（該擴散長度與液晶光閥光導層解析度直接相關）與薄膜橫向和縱向電導率關系的表達式為：由於a - si ： h在al金屬的誘導作用下在不高於250的溫度下即開始晶化，本文對用金屬al誘導非晶硅晶化制備的nc - si a - si ： h薄膜進行研究。 -
Magnetic resonance diffusion tensor imaging : quantitative measurements on upper motor neuron of patients with amyotrophic lateral sclerosis
磁共振擴散張量成像對肌萎縮側索硬化癥患者上運動神經元病變的定量評估意義
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