lattice atom 中文意思是什麼
lattice atom
解釋
晶格原子-
An arsenic atom can take the place of a germanium atom in the lattice.
一個砷原子能取代點陣子中的鍺原子 -
Consisting of the protracting graph of hydrogen - like atom ' s angle distributing, computer simulation of the symmetry of molecular orbital and chemical reaction mechanism, showing the molecular point group and symmetry element, computer simulation of molecular vibration, bravias ' s crystal lattice and their transforming, extracting of plane periodic lattice, extracting of solid periodic lattice, close packing of isometrical pellet and the structure of simple mental substance, close packing of unequal pellet and crystal structure of representative ionic crystal, computer simulation of phase analysis by x - ray diffraction
內容包括類氫原子角度分布圖的繪制，分子軌道對稱性和反應機理的微機模擬，分子點群和對稱元素顯示，分子振動運動的微機模擬，布拉維晶格和晶格轉化，平面點陣抽取，立體點陣抽取，等徑網球的密堆積和金屬單質結構，不等徑圓球密堆積和典型離子晶體結構， x射線多晶衍射的微機模擬十個子模塊。 -
The probability of obtaining a lattice atom displacement via the phonon kick process is evidently small.
很明顯，通過聲子反沖過程而取得晶格原子位移的幾率是不大的。 -
Point defect - a crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom
點缺陷-不純凈的晶缺陷，例如格子空缺或原子空隙。 -
A crystal defect caused by the absence of an atom, an ion, or a molecule in a crystal lattice
晶格空位在晶格里由於缺少一個原子、一個離子或一個分子造成晶格空位 -
The n type carrier was provided by interstitial zn atom, and zn / o ratio and crystalline quality of zno thin film effeted its hall mobility. when zno thin film was annealed in the ar ambience, p conduction type was founded in the zno thin film which grew in oxygen enrichment condition. this might be excess oxygen in zno thin film entered interstitial position of crystal lattice ( oi ), and p type carrier was from oi
在ar氣保護下，對富氧條件下生長的zno薄膜的退火后的霍爾測量中發現， zno薄膜呈現p型導電狀態，分析認為，這可能是由於富氧狀態下生長的zno薄膜中過量的o在ar氣保護下退火沒有逸出薄膜，反而進入了zno薄膜的間隙位置，成為正電中心，使zno薄膜呈現p型導電。 -
The lattice constants were refined using celref program. when implanted c / fe ions ratio is 0. 5 %, the p lattice is expanded, though c atom is much smaller han si. this is probably due to the solid solution in interstitial state
單胞的間隙位置，形成間隙型固溶體，使晶格膨脹；當摻雜的碳離子含量增加到一定的程度時，趨向于形成置換固溶體，因為碳和硅屬同族元素價態相同，所以碳會置換p 。 -
In the theoretical simulation on the behavior of single helium atom in aluminum, the varieties of energy data including the formation, migration, binding, and dissociation energies for single helium atom at the interstitial, vacancy, grain boundary, and dislocation sites in aluminum lattice were calculated, based on the density functional theories, general gradient approximation and pseudopotential plane wave method. results showed that the most fittable sites for containing helium atoms inside the cell are vacancies. but in the view of the whole lattice, grain boundaries are the best
計算結果表明，晶內he原子擇優佔位區是空位，而在整個晶體范圍，最有利於容納he原子的區域是晶界，位錯容納he原子的能力次於晶界和空位；在fcc -鋁的間隙位中， he原子優先充填四面體間隙位；晶內間隙he原子是可動的，通過間隙he原子的運動，可在晶內聚集，或被空位、晶界、位錯等缺陷束縛。 -
This means that the constituent atoms are arranged in a lattice of cubes, with one extra atom sitting at the centre of each cube ' s six faces
也就是說，組成原子排列在一個立方體格上，並且立方體中六個面的每一個面中心也排列有一個原子。
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