lattice dislocation 中文意思是什麼
lattice dislocation
解釋
晶格位錯- lattice : n. 1. 格子。2. 【物理學】點陣；網路。3. 【建築】格構。vt. 1. 把…製成格子狀。2. 用格子覆蓋[裝飾]。
- dislocation : n. 1. 【醫學】脫位，脫臼；離位，轉位，位移。2. 【地質學；地理學】斷層，斷錯；【物理學】位錯。3. 混亂，打亂。
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O - lattice model is userful for calculation of interface dislocation structures. this tool box gives some general interfacial dislocation structures which may be helpful for learning o - lattice model and making some simple calculation
此scilab工具箱提供了一些常見界面的位錯結構模型，可以便於學習o點陣和進一步研究其他界面使用。 -
In the dispersal dislocation area, the variation of carbon concentrations is very small in dislocation areas and perfect crystal lattice areas
分散排列的高密度和低密度位錯區，位錯線上和完整區碳濃度變化不大。 -
Keeping displacement constant, the length of dfz decreased. the less the lattice resistance is, the longer the dfz is. during the crack propagation, the pile - up dislocations may move forward in the previous direction or in another direction which caused shape of dfz changed. the dislocations emitted from the crack tip might pile up in the dfz and can be served as dislocation source in the successive loading
在裂紋擴展過程，反塞積位錯群發生變化，可以沿原來方向繼續向前運動，也可能改變運動方向使無位錯區的形狀發生變化，后來發射出的位錯可以在原五位錯區中塞積，並可作為位錯源在後續的加載中發射位錯。 -
In the theoretical simulation on the behavior of single helium atom in aluminum, the varieties of energy data including the formation, migration, binding, and dissociation energies for single helium atom at the interstitial, vacancy, grain boundary, and dislocation sites in aluminum lattice were calculated, based on the density functional theories, general gradient approximation and pseudopotential plane wave method. results showed that the most fittable sites for containing helium atoms inside the cell are vacancies. but in the view of the whole lattice, grain boundaries are the best
計算結果表明，晶內he原子擇優佔位區是空位，而在整個晶體范圍，最有利於容納he原子的區域是晶界，位錯容納he原子的能力次於晶界和空位；在fcc -鋁的間隙位中， he原子優先充填四面體間隙位；晶內間隙he原子是可動的，通過間隙he原子的運動，可在晶內聚集，或被空位、晶界、位錯等缺陷束縛。 -
In order to improve the properties of materials, one needs to understand the structural relationship between interface and matrix of the materials, such as interface atomic structure, misfit dislocation, chemical bond structure, stress field distribution, composition segregation etc. there are tremendous research works on the grain boundary and interface structures during last century and the sophisticated theory about grain boundary and interface, i. e. coincidence site lattice and 0 - lattice theories had been developed simultaneously
眾所周知，材料的宏觀性質是由其微觀結構所決定的，因此，為了改善材料的宏觀性能我們有必要弄清楚材料的界面與基體之間的結構關系，如界面的原子結構、失配位錯、化學鍵合、應力場的分佈等等。在上世紀，人們已對晶界和相界面結構進行了大量的研究，同時，相關的理論如「重位點陣」和「 o -點陣」理論也發展成熟。
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