lattice distortion 中文意思是什麼

lattice distortion 解釋
點陣畸變
  • lattice : n. 1. 格子。2. 【物理學】點陣；網路。3. 【建築】格構。vt. 1. 把…製成格子狀。2. 用格子覆蓋[裝飾]。
  • distortion : n. 1. 歪扭，扭曲。2. 【電學】（信號、波形等的）失真；【物理學】（透鏡成像產生的）畸變；【醫學】扭轉，變形。3. 竄改，歪曲，曲解。adj. -al
  1. Based on the principle of mechano - chemistry, the strong shock and crashing mechanical force produced by ls - 250 pulverizer can act to the surface of superfine carbon and white carbon particles during the process. the result of the experiment indicated that distortion and amorphism change occur to the surface crystal lattice of carbon particles, and the phenomena are prick up as the action time of mechano - chemical force

    依據機械化學原理利用ls一250型流能粉碎機高速旋轉的動齒工作過程中產生的強烈沖擊、碰撞機械力，使其作用於超細石墨及白碳黑顆粒表面，檢測表明，石墨粒子表面晶格發生畸變及無定形化，且隨著機械力作用時間的延長而加劇。
  2. Pretensioned space lattice structure is a new kind of space structure which develops very fast in recent years. through taking the pretensioning with tendon, the space lattice structure could effectively improve the weight of bearing, control the distortion of the structure, minimize the cost of the engineering

    拉索預應力空間網格結構是近幾年發展比較快的新型空間結構體系。在空間網格結構中通過拉索引入預應力，能夠有效地提高結構承載力。控制結構變形，降低工程造價。
  3. The temperature dependences on the resistance in all the thin films show that in the low temperature range the width of eg band level changes the transports, but in the high temperature range the thin films forms the small polarons hopping conductivity. the phase transition induced by the current is explained by the demagnetization and lattice distortion

    在高溫部分，材料呈現小極化子跳躍形式輸運特徵；實驗研究了不同偏置電流對薄膜的相變影響，表明電場可以引起材料中磁性的變化和晶格畸變，導致相變溫度點向低溫方向移動；材料的光致相變研究表明光子能量、光強和極化方向對輸運性質有影響。
  4. Lattice binding cell constant defect distortion

    晶格結合力晶胞晶格晶格常熟
  5. To characterize the particle size of the srce03 products, some methods used to determine the crystalline grain size and crystal lattice distortion rate of nanostructured powder based on xrd data were studied. it was found that some methods had their shortage. to rationalize the calculation, a proper treating method was recommended

    為了表徵所制備的納米srceo3粉體的粒度，本論文對利用粉晶x射線衍射技術表徵納米粒于的粒度和晶格畸變的方法進行了研究，發現已有的某些方法中存在的不合理性，針對表徵方法的合理化提出了自己的見解。
  6. Due to the change in lattice constant and the distortion of energy band, strained si exhibits great mobility enhancement compared with the conventional si material, and it is the critical reason for the wide application of strained si mosfets

    由於晶格常數的改變，應變硅中載流子的遷移率高於普通硅材料，這是應變硅mosfet性能提高的根本原因。
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