lattice orientation 中文意思是什麼

lattice orientation 解釋
點陣取向
  • lattice : n. 1. 格子。2. 【物理學】點陣；網路。3. 【建築】格構。vt. 1. 把…製成格子狀。2. 用格子覆蓋[裝飾]。
  • orientation : n 1 向東，（禮拜時）東向；置於東端。2 （房屋等）方向；找出東方；定位，定向；取向，排列方向。3 （...
  1. Lattice preffered orientation and seismic anisotropy of ultramafic xenoliths in damaping, hebei province

    河北大麻坪超基性巖包體的巖石組構和地震波速各向異性
  2. The attice parameter change due to heat treatment and c doping does not alter this ptimum orientation relationship but only slightly adjust the deviation angles. the alculated angles between ( 111 ) s, and ( 110 ) p all is 4 ? 6 ? for the lattice parameters neasured

    另外還計算出（ 111 ） s ；與（ 11 ） p之間全部有4 」一6 」的空間角，將這個角投影至001 p方向或n刁1入；方向，就可以從理論上解釋為什麼會在高分辨照片上觀察到的近4 」的轉角。
  3. Crystal defect face orientation lattice

    晶體缺陷晶面晶向晶
  4. A ) the orientation of hbn on si ( 100 ) was dominated intrinsically by the crystalline habit and the lattice mismatch between the substrate and films. the former was dominated by the periodical bond chain ( pbc ) theory, while the latter was in relation with the stress and strain

    A ） hbn在si （ 100 ）表面的取向受hbn自身結晶習性和它與襯底間的晶格匹配關系的控制，前者是受周期性鍵鏈（ pbc ）理論控制，後者與應力和應變有一定關系。
  5. The orientation relationships between cu and mgo are determined by means of electron diffraction patterns. the interface structures are analyzed according to high - resolution images of tem, csl and 0 - lattice theories and verified by simulation computation method

    通過電子衍射圖確定了cu與mgo之間的各種取向關系；根據高分辨像對界面結構進行了研究；通過計算模擬驗證了重位點陣和o -點陣理論。
  6. Lattice preferred orientation ; seismic anisotropy ; damaping

    晶格優選方位波速各向異性大麻坪
  7. Mica lattice orientation

    雲母晶架方位
  8. Over coming lattice and orientation mismatch, direct wafer bonding allows fabricating of structures and devices which can ? get through hetero - epitaxial growth

    利用鍵合技術可以集成晶格或晶向失配的材料，製造傳統外延生長技術不能製造的結構和器件。
  9. According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon

    Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。
  10. For the sake of further understanding the p - fesi2 / si orientation relationships, e calculate the orientations by grain boundary orientation theory. the best p - fesi2 / si orientation relationship is situated in the vicinity of ( 100 ) p / / ( 100 ) si, [ 010 ] p / / 011 > si, with small angular deviations for adapting to the lattice mismatch

    最佳取向關系都在（ 100 ） p （ 100 ） s計n10兒八011 ；附近，但不完全與之相同， x 、 x 、 z方向都有小的轉角，從理論上證實了取向關系要通過轉角來調整失配。
  11. Little grains nisi2with the characteristics of crystal - lattice - match with c - si, can induce p - si under laser radiation. by xrd, it becomes clear that not only higher crystallization degree has been obtained comparing to ela and mic in the same conditions, but also p - si with selective crystal orientation has been achieved under proper conditions with this method

    經xrd表徵，此方法比同條件下激光晶化法和金屬誘導法制備的多晶硅具有更高的晶化度，而且利用此方法在適當的條件下還能生長出具有優選晶向的多晶硅。
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