lattice strain 中文意思是什麼
lattice strain
解釋
點陣應變-
We studied the influence of the interface strain and it shows that the lattice mismatch between substrate and film is the main reason of the above observations. expand strain decreases tm - i with increasing resistivity and compressed strain has the opposite effect. using double exchange model of zener these results can be explained qualitatively
27歐姆厘米，轉變溫度是78與154開爾文，磁場強度為7t時，磁阻率為習3及巧6 x結合雙交換模型和不同的應力作用，逐一解釋了產生差異的緣由，其中我們也討論了具有）取向的la 。 -
A ) the orientation of hbn on si ( 100 ) was dominated intrinsically by the crystalline habit and the lattice mismatch between the substrate and films. the former was dominated by the periodical bond chain ( pbc ) theory, while the latter was in relation with the stress and strain
A ） hbn在si （ 100 ）表面的取向受hbn自身結晶習性和它與襯底間的晶格匹配關系的控制，前者是受周期性鍵鏈（ pbc ）理論控制，後者與應力和應變有一定關系。 -
The theoretical calculation and explanation of strain behavior during heteroepitaxy of oxides thin films : when the lattice mismatch is relative small ( for example, batio _ 3 / srtio _ 3 with a lattice mismatch of 2. 18 % ), the growth mode of thin films is layer - by - layer, and the critical thickness and strain relaxation can be calculated or estimated by matthews - blakeslee expressions ; when the lattice mismatch is large ( for example mgo / srtio _ 3 with lattice mismatch of 8 % ), the strain relaxation process can be explained by theory of coherent strained islands
氧化物薄膜異質外延應變行為的理論預測和解釋。對于晶格失配較小的外延體系（如batio3 / srtio _ 3 2 . 18 % ） ，薄膜以層狀方式進行生長，臨界厚度和應變釋放過程可以用經典的matthews - blakeslee公式進行預測;對于晶格失配較大的體系（如mgo / srtio _ 3 8 % ） ，薄膜以島狀方式進行生長，應變釋放過程可以由彈性應變島的理論體系進行解釋。 -
Besides, silicon substrate is bent by applying external mechanical stress, the lattice of channel will have strain due to uniaxial tensile stress by nmos and strain due to uniaxial compressive stress by pmos
但微影技術已經接近瓶頸，所以我們必須另外尋找能夠提升電晶體效能的方法，應變矽就是目前提升電晶體性能最熱門的方法。 -
Strain free lattice
無應變點陣 -
On the other hand, if the introduction of the residual stress is fully understood, one can make good use of the strain induced by the lattice mismatch between the film and the substrate to modulate and improve the properties of the ferroelectric thin films
另一方面，如果人們能夠對薄膜應力的產生機制有較深刻全面的理解，就可能通過適當的制備手段來利用薄膜與基片間的應變效應來調制和提高薄膜的性能。 -
Epitaxy : concerns / constraints ? lattice - matched systems ; strained layers ( pseudomorphic ) ? limits of thickness ; impact of strain on bands, properties
7磊晶：關鍵與限制-晶格匹配之材料系統；應變層（假晶） -厚度上限；應力對能帶的影響，特性。
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