linear drift 中文意思是什麼
linear drift
解釋
線性漂移-
Drift of the optimal solutions and optima of a grey linear program
灰色線性規劃最優解與最優值的漂移 -
This theoretic model employs the basic idea of correlation measurement, achieve the density wave speed by the correlation of the signals of upper and lower sensors, and get the total flow rate and water cut through the theoretic relationship of density wave speed and total flow rate as well as holdup with the help of drift flux model so as to accomplish the oil / water two - phase flow measurement at last, using the limited available experiment data, the theoretic model has been simplified into an applicable linear alternative which is suitable to homogeneous oil / water two - phase flow measurement to accomplish the oil / water two - phase flow measurement using the density wave phenomena is of highly theoretically valuable for density wave theory research as well as oilavater two - phase flow measurement research. to develop new type oil / water two - phase flow instrumentation based on this theoretic measurement method will be very applicable and promising
在此基礎上，針對穩態密度波理論提出了基於密度波理論的油水兩相流測量理論模型，該模型以密度波傳播理論作為基礎，通過上下游傳感器信號相關獲得密度波傳播速度，利用密度波傳播速度與總流量以及持相率的理論關系結合漂移模型來求解總流量和含相率，實現油水兩相流的測量，在理論分析的基礎上，在實驗資料有限的條件下，對基於密度波理論的油水兩相流測量理論模型作了極限的簡化，提出了本文油水兩相流測量理論方法應用在測量均勻油水兩相流中的實用線性模型。 -
According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage
Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。 -
So adjusting the drift of laser beam and improving its directional stability, which is the key technology in the domain of the linear reference technology, demands to be solved
可見，抑制激光光束漂移，改善其方向穩定性是直線基準技術領域急需解決的關鍵技術。 -
For simplicity and from the properties of local fitting, we only show the asymptotic theory of the local linear estimations for the drift and diffusion functions respectively
為簡單起見，我們只給出了局部線性估計的相合性和漸進正態性的證明 -
It has been found that porous silicon particles drift inversely in the external electric field and adhere to the surface of positive electrodes, such as pt, p + - si, indium - tin oxide ( ito ) coated glass etc. there is a linear relationship between the photoluminescence ( pl ) intensity and the ps concentration of the suspension
將ps懸浮於乙醇中配製成懸浮體系，用己附著的鋅片作正極，鋅片作負極，在電場強度為300v cm時電泳15min ；多孔硅被電泳到zno表面構成zn zno個s電極。
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