low dose rate 中文意思是什麼

low dose rate 解釋
低劑量率
  • low : adj 1 低的；淺的，矮的。 low flight 低飛。 a low temperature 低溫。 low tide [water] 低潮。 The g...
  • dose : n 1 （藥的）一服，一劑；藥量，劑量。2 苦藥，討厭的東西。3 （酒中的）配料，增味劑。4 （處罰等）一...
  • rate : n 1 比率，率；速度，進度；程度；（鐘的快慢）差率。2 價格；行市，行情；估價，評價；費，費用，運費...
  1. At the dose rate of 1 ~ 3 gy / min, their tolerant capacity were ranked from high to low as : one year dormant plant > dry dormant seed > one year shoot > wet cold - stratified seed, their irradiation dose were suggested as 75 - 100gy, 50 ~ 100gy, 30 ~ 50gy, 30 ~ 40gy, respectively

    在劑量率為1 3gy min時，按照耐受性由高到低依次是：一年生休眠植株休眠干種子一年生枝條解除休眠濕種子。它們的適宜輻射劑量分別是：一年生休眠植株， 75 100gy ；休眠干種子， 50 100gy ；一年生枝條， 30 50gy ；解除休眠濕種子， 30 40gy 。
  2. The algae removing rate of four algaecides increased with dose increasing, and the sequence of four algaecides " removing rate on algae from high to low were potassium permanganate, sodium hypochlorite or copper sulfate and hydrogen peroxide. the suitable contact time of four algaecides was also given. the paper compared with the rate of algae removal by any one of three algaecides for two source water

    結果表明，實驗期間，引黃水中藻類絕大多數為硅藻，優勢藻屬為硅藻門的直鏈藻屬，占藻類總數的78 94 ；四種殺藻劑的藻類去除率隨殺藻劑投加量的增加而提高，實驗條件下，四種殺藻劑的藻類去除率由大到小依次為：高錳酸鉀次氯酸鈉或硫酸銅過氧化氫。
  3. The results show that enhanced low - dose - rate sensitivity ( eldrs ) exists in both domestic and imported bipolar transistors, and the npn transistors are more obvious than pnp transistors

    結果表明：在輻照的劑量率范圍內，無論是國產還是進口的雙極晶體管，都有明顯的低劑量率輻照損傷增強現象，且npn管比pnp管明顯。
  4. Examination and maintenance of low dose rate of the varian cl2300c d medical linear accelerator

    型直線加速器低劑量率故障應急檢修一例
  5. In addition, research on radiation effects of mos capacitor implanted bf2 + at low dose rate are also made in short

    此外，本文還開展了bf _ 2 ~ +注入mos電容低劑量率輻照效應的研究工作。
  6. The radiation effects of mos devices implanted bf2 at low dose rate are investigated in some different respects in this paper

    本文從不同方面對bf _ 2 ~ -注入mos管低劑量率輻照效應進行了深入的研究。
  7. Firstly, the theories relative to radiation effect are discussed in brief, including some models of interface trap formation and process of producing oxide trap charge in radiated mos devices. besides, the radiation effects at low dose rate and the mechanism of radiation hardening for bf2 implantation are reviewed too

    首先，對有關輻照效應的理論進行了簡要的敘述，介紹了輻照過程中氧化物陷阱電荷的產生過程以及界面態建立的一些模型，另外，還對低劑量率輻照效應以及bf _ 2 ~ +注入加固mos器件的機理做了回顧。
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