low-temperature annealing 中文意思是什麼

low-temperature annealing 解釋
低溫退火
  • low : adj 1 低的；淺的，矮的。 low flight 低飛。 a low temperature 低溫。 low tide [water] 低潮。 The g...
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  • annealing : 熱處理
  1. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  2. Then, the effect of heavily doped boron on ig of czochralski silicon was also investigated. it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature, ramping annealing respectively. for conventional high - low - high three - step ig annealing, the dz becomes narrower and bmd density is higher in hb samples than that in lb samples, as a result of hb enhancing oxygen precipitation

    結果顯示，單步高溫熱處理時重摻硼樣品不能形成潔凈區；降溫退火中，降溫速度較為緩慢（ 3 / min ）時能生成一定量的氧沉澱，但沒有潔凈區形成；普通高?低?高三步熱處理過程中，形成明顯的潔凈區，但相對輕摻樣品而言，潔凈區較窄，氧沉澱密度明顯偏高，說明重摻硼樣品吸雜能力強。
  3. Ir spectrum analyses have demonstrated that the structure mode of the substoichiometric silicon - 53 - abstrct oxide films ( sio ~ ) can be described as a mixture of rmm and rbm x at relatively low annealing temperature. the reaction, si - si ~ o4 ~ - - - ~

    進一步升高，由a工膜的xrd圖矛前人的實驗推車如t 800硅晶化自分急后增力，相應的a七減少， nc和a七。
  4. The ultra - thin er layers with the thicanesses in the range of 0. 5 ~ 3 monolayer ( ml ) are formed by electron beam evaporation on si ( 00l ) substrate at room temperature in an ultra - high vacuum system. after annealing at lower temperatures, ordered simcfores form on the surface. the trallsition of the surface reconsmiction pattem from ( 2 x l ) to ( 4 x 2 ) with the increase of er coverage up to l ml is observed by the reflective high energy electron diffraction ( rheed ) and low energy electron diffraction ( leed )

    本文是關于硅（ 001 ）襯底與電子束淀積的鉺、鉿原子反應形成的超薄膜的界面與表面性質的研究，以及在該襯底上出現的共振光電子發射現象，包括了以下四個方面的工作： 1鉺導致的硅（ 001 ）襯底上的（ 4 2 ）再構研究利用反射高能電子衍射和低能電子衍射，在室溫淀積了0
  5. The maximal power outputs of 37. 0 mw / cm2 and 30. 0 mw / cm2 for the p - and n - type laminated materials respectively at the temperature difference 490 have been experimentally obtained, which are about 2. 5 and 3. 0 times those of - fesi2. chemical analyses show that the interface failure between the bridge alloy and the semiconductor bi2te3 results mainly from the eutectic mixtures with low melting point and brittle compounds formed during welding and long time annealing at 190. it is found that the electrical properties of a laminated structure are mainly controlled by the wettability of the bridge alloy on the semiconductor surface

    發現： 1 ）疊層材料具有明顯優于均質材料的熱電性能，在490溫差下， p -型和n -型疊層材料的最大輸出功率分別達到37 . 0和30 . 0 （ mw / cm ~ 2 ） ，是同類型均質- fesi _ 2的2 . 5和3倍； 2 ）在焊接過程和190長時間退火處理過程中，焊接過渡層合金和基體半導體（特別是bi _ 2te _ 3 ）之間存在明顯的元素相互擴散，從而在過渡層中形成一些低熔點共晶體和脆性化合物，這是導致疊層材料破壞的主要原因； 3 ）焊接過渡層合金與半導體基體之間的潤濕性是影響界面層電性能的主要因素。
  6. The variation principle of wave velocity in different microstructures of 40cr is similar with that of 38crmoal. the velocity in quenching and low temperature tempering structure of gcrlssimn is much lower than the velocity in normalizing, annealing and high temperature tempering structure

    Gcr15simn鋼淬火+低溫回火組織的c _ 1遠大於正火、退火及淬火+高溫回火組織的c _ 1 ；正火、退火及淬火+高溫回火組織的c _ 1比較接近。
  7. The effect of high temperature in rapid thermal process ( rtp ) on the dissolution of oxygen precipitate generated by two - step ( low - high ) annealing is investigated

    摘要通過對已經過兩步（低高）退火的大直徑直拉矽單晶片進行高溫快速熱處理，研究矽中氧沈澱被高溫快速熱處理消融的情況。
  8. Annealing could reduce hardness and raise toughness, which could be prone to mechanical machining. quenching and low temperature tempering could raise intensity and hardness of materials, not reduce toughness obviously. quenching on same temperature caused ticp / fe in situ composites having the best integral machine properties

    退火處理使材料的硬度降低，韌性提高，便於機械加工；淬火+低溫回火處理使材料的強度和硬度提高，而韌性無明顯的降低；採用等溫淬火工藝，可使tic _ p fe復合材料具有最好的綜合機械性能。
  9. Abstract : it was verified through experiment and measurement that there was growth phenomenon taking place with nodular iron castings after graphitizing annealing at low temperature. the emergence mechanism and reason of the “ annealing growth nature ” was dicussed, and its prevention measures was proposed

    文摘:通過試驗和測試，證實了球鐵件經低溫石墨化退火后存在的生長現象，並對這種「退火生長性」產生的機理及原因進行探討，提出了防止措施。
  10. In this paper, we employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effect of the substrate temperature and annealing temperature on the quality of zno thin films was studied in detail

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，確定了生長高質量氧化鋅薄膜的優化條件；研究了不同的襯底溫度和退火溫度對氧化鋅納米薄膜質量的影響。
  11. Ohmic contacts on h2 - thermally - treated 6h - sic surface by evaporating aluminum without annealing have contact resistances of 8 10 - 3 - cm2 on room temperature and keep fairly good thermal stability under the temperature of 400. its ohmic properties do n ' t depend on the doping concentrations of the substrate, which enables us to form ohmic contacts on low dropped substrate especially on epitaxial layer

    通過氫氣處理6h - sic表面並鍍鋁后直接形成的歐姆接觸室溫比電阻率達到8 10 ~ （ - 3 ） ? cm ~ 2 ，溫度不超過400時該接觸具有較好的穩定性，其歐姆特性不依賴于襯底的摻雜濃度，是一種適宜在低摻雜襯底特別是sic外延片上制備歐姆接觸的有效方法。
  12. Ito films with low sheet resistance can be obtained by raising the substrate temperature during deposition or annealing in the inert gases at high temperature

    低電阻率的ito膜可以通過提高沉積時的襯底溫度或高溫退火來獲得。
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