lt low temperature 中文意思是什麼

lt low temperature 解釋
低溫
  • lt : x線斷層照相術
  • low : adj 1 低的；淺的，矮的。 low flight 低飛。 a low temperature 低溫。 low tide [water] 低潮。 The g...
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  1. This concentrator is suitable for concentrating the fluid materials of traditional medicine, western medicine, grape sugar, starch, gourmet powder, food and milk products, chemical industry. lt can be suitable for small batch and many varieties thermal sensitive low temperature concentration

    本設備適應用於中藥、西藥、葡萄糖、釀酒、澱粉、口服液、化工、食品、味精、乳品等工業酒精回收，適用於批量小、品種多的熱敏唾低真空濃縮。
  2. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  3. In light of them, matching pmosfet and nmosfet with strained si channel were designed. 2. the epitaxy layers including lt ( low temperature ) si grow technicsare discussed

    2 .研究了包括400下分子束外延法生長100nm的低溫硅層的各外延層生長技術。
  4. After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide

    其次，根據器件參量對閾值電壓和輸出特性的影響，以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構，詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值，對器件進行優化設計。
  5. Methods the 54th generation of transformed human embryonic tendon cells and artificial composite materials of carbon fibers ( cf ) and polyglycolic ( pga ) were co - cultured in vitro to construct tet. lt was frozen in liquid nitrogen with four kinds of cpa for 2 months. post - thawed quickly and transplanted into hind limbs of nude mice, and repaired the defects of achilles tendon. after 2, 4, 6, 8, 12 weeks, the morphological, histological, ultrastructure, short tandem repeat loci and immunohistochemistry examination were detected, and biomechanical strength of tet were examined. result tendon cell survived and could secret type i collagen after 12 weeks to transplanted into nude mice. in the group of dmso + raffmose + kh2o4, vacuole in mitochondrion degraded i tendon cell ranged in order, abundant collagen fibers were found and linked each other and the biomechanical strength was increased as time elapsed. c onclusion dmso + raffmose + kh2o4 could protect tet in deep low temperature

    組織工程肌腱制備完成後在四種抗凍劑保護下液氮凍存2月；快速復溫后植入裸鼠以修復跟腱缺損， 2 、 4 、 6 、 8 、 12周后取出，觀察形態學、組織學、電鏡和免疫組織化學變化，短串聯重復位點檢測和生物力學變化。結果實驗組組織工程肌腱體內植入12周后仍有肌腱細胞存活並分泌型膠原；隨著時間延長， 10二甲基亞碸（ dmso ） +棉子糖（ 30mmol l ） + kh _ 2po _ 4 （ 25mmol l ）組線粒體空泡減少，肌腱細胞排列整齊，膠原纖維增粗並連接，抗拉強度增高。
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