luminescence center 中文意思是什麼
luminescence center
解釋
發光中心- luminescence : n. 【物理學】發光，發螢[冷、磷]光。adj. -nescent
- center : n vt vi 〈美國〉＝centre n 1 中心；中心點；圓心；中央；中樞，核心；中心人物；根源，起源。2 〈常C ...
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The study indicate that sral2o4 : tb3 + phosphor can be composed from 1250c to 1550c, the phosphor ' s luminance reduce and the afterglow time shorten along with the compounding temperature ; the better luminance and afterglow with the better crystalloid degree ; the luminescence of tb3 + ion in the sral2o4 is coming from the transition of 5d4 - 7fj ( j = 6, 5, . . . 0 ) ; the afterglow is because of the electron that seized in the trap released which integrate with the luminescence center
合成發光體亮度隨合成溫度的降低而逐漸降低，余輝時間逐漸縮短；當合成物具有較好的結晶度時，合成的發光粉不僅發光亮度高而且余輝時間長； tb ~ （ 3 + ）離子在sral _ 2o _ 4基質晶格中的發光主要來自於~ 5d _ 4 ~ 7f _ j （ j = 6 ， 5 ， … … 0 ）的躍遷；其餘輝是因為不斷有被陷阱所俘獲的電子釋放出來與發光中心復合。 -
The photoluminescence spectra were found to have the peak at 360nm and 675nm. we discuss the exciting spectrum and luminescence center separately. we take ito as the underlay material
在光致發光測定中，我們得到了位於360nm和675nm的發光峰，並討論他們的激發譜和發光中心。 -
The aluminates are used as the base and the rare earth materials are used as the luminescence center and trap center. the excitation resource can be visible light and man - made light
它以鋁酸鹽陶瓷材料為基質，以稀土材料作為摻雜元素形成發光中心和陷阱中心，激發光源可以為目光或人造光源。 -
The aluminates are used as the base and the rare earth materials are used as the luminescence center and trap center. the excitation resource can be visible light and man - made light, so this type of long persistent phosphor has the advantages of no - radiation and no need of electricity
它以鋁酸鹽陶瓷材料為基質，以稀土材料作為摻雜元素形成發光中心和陷阱中心，激發源可以為日光或人造光源，無污染，不消耗電能，是一種高效節能的固體發光顯示材料。 -
As a result 4 the rising annealing temperature induces si02 phase to form, also ivolves the formation of a si phase. in high - temperature - annealed sio ~, films the excess silicon atoms are present as si - si4 tetrahedra, randomly dispersed in the amorphous si02 matrix. photoluminescent spectra were observed for the samples excided by the laser whose wavelength is 365nm. the pl peak is located at about 445nm, which dose n ' t shift as the annealing temperature changes. as the annealing temperature is raised, the luminescent intensity increases. the phenomena suggest that the si - o - si bond as a defect center which is broken down by the stress at the si nc / si02 interface is the primary source of blue luminescence
這個陡的界面由於明顯的晶格結構的差別而有較大的應力。界面的形成伴隨著界面發光中心的增加，同時pl強度在l戶800有一個大的增強。這個結果提示我們，界面上h 0 s工鍵斷裂形成的nbohc應是藍光發射的主要原因。
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