magnetic domain wall 中文意思是什麼
magnetic domain wall
解釋
磁疇壁-
According to the minimum principle in energy, we analyze the microcosmic mechanism of magnetic domain construction and the main factor that affect the shape, size and connecting of the magnetic domain etc. from the microcosmic mechanism of ferromagnet, we analyze how stress influence the magnetic domain and magnetic domain wall, and discover the increase of stress energy and magnetism elasticity energy which destroy the balance of system energy make up the influence of magnetic domain structure, then set up basic disciplinarian between stress and characteristic of magnetism
同時根據能量最小原理，從理論上分析了磁疇結構存在的微觀機理以及影響磁疇結構運動、變化的主要因素，得出了應力的存在將影響磁疇的形狀、大小和搭配方式等結論。從鐵磁晶體的微觀機理出發，研究了應力對磁疇和磁疇壁的影響，發現應力影響磁疇結構的本質是由於應力的作用使得鐵磁晶體增加了應力能和磁彈性能，體系為了達到新的平衡，導致了磁疇結構變化，並研究了應力與鐵磁晶體磁特性之間的基本規律。 -
It indicates that these materials are optimum cadidate for application. the magnetostriction of terfenol - d was calculated based on the model of magnetic domain turning and the model of magnetic domain wall motion respectively. the experiment value is consistent with that of calculation in low magnetic fields
應用磁疇轉動模型和疇壁位移模型計算了terfenol - d的磁致伸縮，計算結果表明在低磁場下，應用疇壁位移模型得到的計算結果與實驗結果符合較好。 -
In particular, it is found that static instantons are just domain wall solutions in the magnetic film. stability of the domain walls is also investigated in terms of the instanton theory
我們發現靜態周期瞬子正是鐵磁膜中的疇壁，用相應的瞬子理論討論了疇壁的穩定性。 -
X - ray diffraction results revealed that the structure of as - deposited smco film was amorphous and crystallization happened after the films annealed at 500 in vacuum. the magnetic tests of smco thin films showed that its coercivity reduced with the increase of film ' s thickness while the ratio of mr / ms was opposite. the films " coercivity and mr / ms declined after it annealed at 500 because the machanism of magnetization were changed from domain wall nailing into magnetic nuclear forming
研究結果表明，由於雜質fe的摻入降低了smco薄膜的磁性能；制備態smco薄膜為非晶態結構，矯頑力hc隨著薄膜厚度的增加而減小，剩磁比mr ms隨膜厚增加而增加；經過500真空退火熱處理后，薄膜出現smcos的結晶物，矯頑力hc降低， mr ms減小，磁化機制由疇壁釘扎類模型轉為形核類模型。 -
The ultra high density bloch line memory ( blm ) scheme was proposed bykonish in 1983. negative vertical bloch line ( vbl ) pairs in the walls of stripe domains aligned in parallel ( minor loops ) are used as information carries in blm. so, the study of the temperature stability of the vbl in the magnetic domain of garnet bubble is very important to the study of blm and the development of magnetic domain wall physics
並通過j . c . slonczewski所給出的vbl的平衡間距公式分析得出d疇壁中vbl間的平衡間距（ s _ （ eq ） ）隨溫度的升高而增大，這與以前人們所得到的ohb疇壁中vbl間平衡間距（ s _ （ eq ） ）隨溫度的升高而減小的結論不一致，並對此進行了分析。
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