magnetron 中文意思是什麼

magnetron 解釋
n. 名詞 【無線電】磁控(電子)管。
rising-sun magnetron旭日型磁控管。

  1. Excellent results have been obtained by using dc magnetron sputtering technology. a solar absorptance of 0. 94 - 0. 96 with an emittance of 0. 04 - 0. 06 at 100 has been achieved

    磁控濺射技術的準確結果顯示這種真空管在100時能夠達到吸收率: 0 . 94 - 0 . 96
  2. Anticoagulant property of tio2 thin films prepared by magnetron sputtering

    2薄膜的抗凝血性能
  3. Copper has been deposited on surface of the al mmcs as interlayer by magnetron sputtering, tlp bonding of al mmcs with these interlays, the joints shear strength of tlp bonding using deposited film was as much as the joint shear strength of tlp bonding using cu foil. removing the oxidation on the surface before deposition, copper was coated by magnetron sputtering as tlp bonding interlayer

    待連接表面通過磁控濺射法沉積銅膜作為中間層進行瞬間液相連接,得到的接頭強度與銅箔中間層進行瞬間液相連接得到的接頭強度相當,而使用磁控濺射法去除待連接表面氧化膜后沉積銅膜作為中間層進行瞬間液相連接的接頭強度提高7 . 6左右。
  4. Techniques of clinical linac magnetron replacement

    醫用直線加速器磁控管更換技術探討
  5. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上,採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜,揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大,隨濺射功率的增大沉積速率快速增大。
  6. Magnetron enhanced reactive ion etaching system

    磁控管增強型反應性離子蝕刻系統
  7. Research of unbalanced magnetron sputtering system

    非平衡磁控濺射系統的研究
  8. Detail specification for coail magnetron of type ckm - 2936

    Ckm - 2936型同軸磁控管詳細規范
  9. Detail specification for pulse magnetron of type ckm - 6951

    Ckm - 6951型脈沖磁控管詳細規范
  10. Pulased mode of inverted - magnetron cold - cathode gauge

    一種反磁控冷陰極真空規的脈沖操作模式
  11. Magnetron sputtering target source and sputtering procedure

    磁控濺射靶源設計及濺射工藝研究
  12. Compound medium wave - guide film on columned li - ferrites was made by magnetron sputtering system

    用磁控濺射的方法在圓柱鋰鐵氧體表面鍍覆了復合介質波導薄膜。
  13. Magnetron management of target capacity and stabilization of an anodi current with the help of the built - in electromagnet, an opportunity of a parallel feed several magnetrons from one rectifier, a low level of the shf radiation from a cathodic leg is characterized effective

    該磁控管可有效控制輸出功率,內建電磁石使提高了它的陽極穩定性,一個整流器可同時供幾個磁控管,具有低的陰極超高頻輻射。
  14. Firstly, the tio2 thin films are deposited by dc reactive magnetron sputtering apparatus, and characterlized by n & k analyzer1200, x - ray diffraction spectroscopy ( xrd ), scanning electronic microscopy ( sem ), alpha - step500. and it was analyzed that the effect on performance and structure of films with the change of argon flow, total gas pressure, the substrate - to - target distance and temperature

    第一、應用穩定的直流磁控濺射設備制備tio2減反射薄膜並通過n & kanalyzer1200薄膜光學分析儀、 x射線衍射分析( xrd ) 、掃描電子顯微鏡( sem ) 、 alpha - step500型臺階儀等儀器對薄膜進行表徵,分析氧分壓、總氣壓、工作溫度、靶基距等制備工藝參數對薄膜性能結構的影響。
  15. Magnetron it is characterized by small weight and a low level of the shf radiation from a cathodic leg

    其特點在於小的重量和低的陰極超高頻輻射。
  16. Magnetron has filamentary cathode with small time hearting, the shielded cathodic site, liquid cooling and the filter built - in by radio

    它具有加熱時間短的細絲陰極,液體冷卻和內建無線電濾波。
  17. Magnetron has filamentaryo cathode with small time hearting, the shielded cathodic site, liquid cooling and the filter built - in by radio

    該磁控管具有加熱時間短的屏蔽陰極,液體冷卻和內建無線電濾波。
  18. High quality nickel films have been successfully plated on cenosphere particles by dc magnetron sputtering at mom temperature

    摘要本文論述了在空心微珠表面磁控濺射鍍金屬薄膜的方法。
  19. In this study we focused on the pinning structure, and prepared [ pt / mn ] n multilayer by dc magnetron sputtering system instead of using co - sputtering, by which we wish to find a way to reduce the critical annealing temperature and shorten the annealing time

    在我們的課題研究中,我們著重對釘扎層進行了研究,工藝上採用了pt / mn多層膜而不是傳統的共濺射的方法。我們希望通過這種方式能夠發現一條降低臨界退火溫度的途徑,並且能夠縮短退火時間。
  20. In this paper, we reported the structural and luminescent properties of si - based oxide films containing semiconductor si, ge or metal al powders prepared by a dual - ion - beam co - sputtering method ( si - sio2 films and al - si - sio2 films ) or rf magnetron sputtering technique ( ge - sio2 films ), and analyze the pl and el mechanism. 1. the composite films of si - sio2 films were prepared by dual ion beam co - sputtering method from a composite target in argon atmosphere

    我們利用雙離子束共濺射和射頻磁控共濺射技術制備了一系列含有半導體si 、 ge顆粒及金屬顆粒al的薄膜,即si - sio _ 2薄膜、 ge - sio _ 2薄膜和al - si - sio _ 2薄膜,分別對它們的結構、光吸收以及發光性質進行了研究。
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