mocvd mocvd 中文意思是什麼

In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators. firstly, we presented reseached and development of solar cells in china and foreign countries ; secondly, on the basis of fundamental priciples and theories, we discussed some factors of influcing conversion efficiency of solar cells, and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed, the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied, and some questions on epitaxy growth ( such as crystal qualities, interface stress, element interdiffusion, n - and p - type doping et all ) were solved ; after that, the cell fabrication process was described ; finally, we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma, designed and fixed new solar concentrators

本文致力於用自製的低壓mocvd裝置進行cainp _ 2 / gaas / ge空間用高效級聯太陽能電池製作的工藝以及聚光太陽能電池組件的研究。首先，介紹了國內外太陽能電池的研究現狀及應用情況；其次，運用太陽能電池基本原理討論影響電池轉換效率的因素，分析了級聯電池的伏安特性；隨后，討論了cainp _ 2 / gaas / ge雙結級聯電池的結構設計理念，研究了採用低壓mocvd技術生長cainp _ 2 / gaas / ge級聯太陽電池材料的工藝過程，解決了異質材料生長的結晶質量、界面應力、材料互擴散以及材料n 、 p型摻雜等一系列問題；然後總結了級聯電池的后工藝製作；最後，研究了以pmma為材料的菲涅耳線聚焦透鏡的熱壓成型工藝及其模具的加工工藝，設計並安裝完成新型聚光太陽能電池組件。

Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。

At present the prevailing epitaxial growth techniques of gan are metalorganic chemical vapor deposition ( mocvd ), molecule beam epitaxy ( mbe ) as well as hvpe

目前gan的外延生長技術一般採用有機金屬化學氣相外延法（ mocvd ） ，在藍寶石襯底的（ 0001 ）面上外延生長gan材料，另外還有分子束外延技術（ mbe ）及鹵化物汽相外延技術（ hvpe ）等。

Thin sin layers and nitride - based multiquantum well ( mqw ) light emitting diode ( led ) structures with conventional single gan buffer and gan / sin double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition ( mocvd )

摘要以有機金屬化學氣象沉積在藍寶石基板上成長由單一氮化鎵成核層與氮化鎵/氮化矽雙緩沖層所形成的兩種不同氮基礎的多層量子井發光二極體結構。

In the present thesis, znse, znte and their quantum well ( qw ) structures on si substrates with zno as buffer layer by low pressure metal - organic chemical vapor deposition ( lp - mocvd ) technique were prepared. zno is selected as the buffer layer for it has many similarities with the oxide layer on the surface of si wafer. all important experimental results and conclusions presented in this thesis are summarized as follows : 1

本文中，我們利用zno與si襯底上氧化層? sio _ x有很好的浸潤性這一特點，採用zno作為緩沖層，用低壓-金屬有機物氣相沉積（ lp - mocvd ）設備在si襯底上生長znse和znte薄膜以及zncdse znse和zncdte znte量子阱結構，並對其發光特性進行了研究，獲得的主要研究結果如下： 1 、在si襯底上獲得了較高質量的zno薄膜。

By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly

本文利用mocvd技術，採用各種對si襯底處理的方法，如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究，通過x射線衍射技術（ xrd ） 、光致發光技術（ pl ） 、掃描電子顯微術（ sem ） 、透射電子顯微術（ tem ）等檢測，並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析，發現外延晶體的生長質量得到了明顯提高。

In this thesis, we grow hexagonal gan on c - plane sapphire substrates in a horizontal mocvd reactor equipped with an in situ normal incidence reflectance monitoring, and the focus has been turned to improve the quality of unintentionally doped gan epilayer. listed below are the main contents of this thesis. ( 1 ) a single - wavelength normal incidence reflectance monitoring system was installed

本文利用配有近垂直入射激光反射在位監測的臥式mocvd在c面藍寶石襯底上生長六方相的gan薄膜，圍繞提高本徵gan外延層質量的目的，開展了具體如下的工作： （ 1 ）在mocvd設備上搭建了一套單波長近垂直入射激光反射在位監測系統。

This is one of the characteristic of quantum dots ( qds ), which showed that the samples we obtained on si substrate by lp - mocvd were znse qds

對樣品作變溫光譜發現，該結構的發光峰寬度隨溫度的升高先減小然後才增大，這正是量子點結構的特徵之一。

At present, mocvd technology has comparative high development level and high epitaxy quality. the study on mocvd technology has become an important item both at home and abroad too

Mocvd外延生長技術是目前發展水平較為成熟、外延質量較高的一種外延生長方法，對mocvd技術的研究也成為了國內外研究的重點。

The applications field of fgm include aerospace, electron, chemistry, biology and medicine fields ; the composition change also from metal / ceramic to metal / metal, metal / alloy, non - metal / non - metal and non - metal / ceramic. moreover, various methods including powder metallurgy, self - propagating high - temperature synthesis ( shs ), chemical and physical vapor deposition ( cvd and pvd ), electrodeposition, laser cladding method, plasma sputtering and sol - gel method have been studed. metal organic chemical vapor deposition ( mocvd ), using chemical vapor deposition of metal organic compounds, is an effective method for acquiring special function materials and membrane

功能梯度材料是21世紀最有發展前景的新型材料之一，其用途已由原來的宇航工業，擴大到核能源、電子、化學、生物醫學等領域；其組成也由金屬?陶瓷發展成為金屬?金屬、金屬?合金、非金屬?非金屬、非金屬?陶瓷等多種組合；其制備方法主要包括粉末冶金法，自蔓延高溫合成法（ shs ） 、氣相沉積法（ cvd和pvd ） 、電沉積法，激光熔覆法，溶膠?凝膠法（ sol - gel ）等。

The sl401 circulating water refrigeration unit is mostly used as a supporting product for precision instrument facilities with the need of isothermal cooling water, for example, the x - ray diffractometer, fluorescence spectrometer, scanning microscope, laser, energy spectrometer, vacuum forming machine, high - frequency generator, mocvd, etc

Sl401型循環水製冷機組主要為x射線衍射儀、熒光光譜儀、掃描顯微鏡、激光器、能譜、真空成型機、高頻機、 mocvd等需用恆溫冷卻水源的精密儀器設備的配套產品。

Mbe and mocvd mothods have been used successfully to produce znse film. however, because of the high expense, mbe and mocvd are difficult to popularize. in this thesis, we try to find some inexpensive method to produce the znse film

使用mbe和mocvd方法制備znse薄膜的工藝已經比較成熟，但由於這兩種方法需要昂貴的設備和很高的運行成本，所以不利於znse薄膜制備技術的推廣和發展。

With the development of thin film science and technology, various thin film preparation techniques developed rapidly, as a result, conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques, such as ion plating, sputtering, laser deposition, cvd, pecvd, mocvd, mbe, liquid growth, microwave and mtwecr, etc., of which vacuum evaporation is the common technology for thin film preparation, because it has the distinct advantage of high quality of film deposition, good control - ability of deposition rate and high versatility

隨著薄膜科學與技術的發展，各種薄膜制備方法得到了迅速發展，傳統的所謂鍍膜，已從單一的真空蒸發發展到包括蒸鍍、離子鍍、濺射鍍膜、化學氣相沉積（ cvd ） 、 pecvd 、 mocvd 、分子束外延（ mbe ） 、液相生長、微波法及微波電子共旋（ mwecr ）等在內的成膜技術。其中電子束蒸發技術是一種常用的薄膜制備技術，它具有成膜質量高，速率可控性好，通用性強等優點。

Studies on microstructure and optical properties of mica pearlescent pigment by mocvd

法制備雲母珠光顏料光學性能及微結構研究

Structure and optical property of zno thin films grown by mocvd

薄膜的結構及光學特性

Mathematics model and numerical analysis of the mocvd reactor

反應器的數學模型及其數值模擬

The optimization of mocvd reactor and its mathematics model

反應器的優化及其數學模型的建立

Array materials of one - dimensional oxides prepared by mocvd method

法制備一維氧化物陣列材料

Optical characteristics and magnetism of mn - ion - implanted mocvd - gan film

薄膜的光學性質及其磁性

Design of computer controlled mocvd system

控制系統設計