molecular beam epitaxy (mbe) 中文意思是什麼
molecular beam epitaxy (mbe)
解釋
分子束磊晶法；分子子束外延-
Molecular beam epitaxy, mbe
分子束磊晶 -
High quality single - crystal zns - based ii - vi thin films have been prepared on gaas and gap substrate using molecular beam epitaxy ( mbe ) technique. successful n - type doping of znsxse1 - x alloy using aluminum source has been carried out
本文研究了在gaas和gap襯底上，本徵型和n型al摻雜zns基單晶薄膜的分子束外延生長，獲得了高質量的單晶外延薄膜。 -
Main works and results include : ( 1 ). growth method of self - organized quantum dots was studied. high quality inas self - organized quantum dots were grown by mbe ( molecular beam epitaxy ) technique
本文開展的主要工作和結果有： （ 1 ）研究了自組織量子點的生長方法，利用分子束外延技術（ mbe ）生長出高質量的inas自組織量子點。 -
Fortunately, with the improvement in the material growth, gap1 - xnx alloys with nitrogen concentration as high as several percentage have been successfully grown by molecular beam epitaxy ( mbe ) or metalorganic vapor - phase epitaxy ( movpe ). more and more attentions have been paid to this alloy for its distinct property such as the giant band gap and effect, for this reason, gap1 - xnx alloys are usually called abnormal alloys
人們研究發現， gapn混晶具有一些獨特的光電性質，例如其帶隙不是gap和gan的線性內插值，而是存在著較大的帶隙降低和巨大的帶隙彎曲系數，因此gapn混晶又被稱為「反常」混晶，從而引起了人們越來越多的關注，並成為當前的一個研究熱點。 -
To study its properties and obtain high quality thin films, a variety of techniques have been used such as molecular beam epitaxy ( mbe ), metal organic chemical vapor deposition ( mocvd ), magnetron sputtering, pulsed laser deposition, to prepare zno thin films
為了獲得高質量的氧化鋅薄膜材料，人們已採用分子束外延，有機化學汽相沉積，脈沖激光沉積，磁控濺射等各種技術來制備氧化鋅薄膜材料。 -
Molecular beam epitaxy ( mbe ) has been used to grow insb heteroepilayer on gaas ( 001 ) substrate with optimized low temperature buffer layer. the surface morphology and crystal quality of insb epilayers have been investigated by means of atomic force microscope ( afm ), scanning electron microscopy ( sem ) and double crystals x - ray diffraction ( dcxrd )
本文採用分子束外延（ mbe ）方法在gaas （ 001 ）襯底上優化低溫緩沖層生長條件制備了異質外延insb薄膜，採用原子力顯微鏡（ afm ） 、掃描電鏡（ sem ）與x射線雙晶衍射（ dcxrd ）等方法研究了insb / gaas薄膜的表面形貌與結晶質量。
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