monolithic devices 中文意思是什麼
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Semiconductor devices - integrated circuits - part 2 : digital integrated circuits - section one - blank detail specification for bipolar monolithic digital integrated circuit gates excluding uncommitted logic arrays
半導體器件集成電路第2部分:數字集成電路第一篇雙極型單片數字集成電路門電路 -
Tas semiconductor devices - technology approval schedule for monolithic microwave integrated circuits
半導體器件.單片微波集成電路的技術驗收程序 -
Especially, mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively. therefore, it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic
以液封直拉半絕緣gaas為襯底的金屬半導體場效應晶體管（ mesfet ）器件是超大規模集成電路和單片微波集成電路廣泛採用的器件結構，因此研究lec法生長si - gaas （ lecsi - gaas ）襯底材料特性對mesfet器件性能的影響，對gaas集成電路和相關器件的設計及製造是非常必要的。 -
Silica ( sio2 ) is a very promising material used to fabricate the optical waveguide for its low insertion loss, efficient fiber - to - chip coupling, high integration density and compatibility with microelectronic process. it is possible to realize the monolithic integration of optical devices with microelectronic devices and the passive devices with the active ones
而硅基氧化硅光波導以其低的插入損耗、能有效的與光纖耦合、集成密度高、可以充分利用現已成熟的微電子技術等特點成為較為理想的實現波導結構的材料。 -
Semiconductor devices ; integrated circuits ; part 2 : digital integrated circuits ; section 1 : blank detail specification for bipolar monolithic digital integrated circuits gates excluding uncommitted logic arrays
半導體器件.集成電路.第2部分:數字集成電路.第1節:雙極整體數字集成電路門 -
Specification for harmonized system of quality assessment for electronic components - semiconductor devices - integrated circuits - blank detail specification - bipolar monolithic digital integrated circuit gates excluding uncommitted logic arrays
電子元器件質量評定協調體系.半導體器件.集成電路.空白詳細規范.雙極單片式數字集成門電路 -
5 、 through the structural parameters of the sige hbt, associating the passive devices, the layout of the monolithic integrated circuit lna is obtained, and the technology of the circuit and the vital process process are introduced. through the analysis and the design of sige hbt, two solutions of the base
重點是通過對sigehbt分析和研究，提出了解決基區外擴現象的兩種方案，同時在工藝上應用sigehit - kit0 . 35 mbicmos新工藝來製作平面電感、電容、電阻和有源器件。 -
Semiconductor devices ; integrated circuits ; part 3 : analogue integrated circuits ; section 1 : blank detail specification for monolithic integrated operational amplifiers
半導體器件.集成電路.第3部分:模擬集成電路.第1節:單塊集成電路運算放大器 -
Semiconductor devices ; integrated circuits ; part 3 : analogue integrated circuits ; section one : blank detail specification for monolithic integrated operational amplifiers ; identical with iec 60748 - 3 - 1 : 1991
半導體器件.集成電路.第3部分:摸擬集成電路.第1節:單 -
Specification for harmonized system of quality assessment for electronic components - semiconductor devices - integrated circuits - blank detail specification - monolithic integrated operational amplifiers
電子元器件質量評估協調體系.半導體器件.集成電路.空白詳細規范.單片集成運算放大器 -
Tas semiconductor devices - part 16 - 10 : technology approval schedule for monolithic microwave integrated circuits
半導體器件.第16 - 10部分:單片型微波集成電路的技術驗收程序
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