multiple diffraction 中文意思是什麼
multiple diffraction
解釋
多重發射- multiple : adj 1 多重的；復合的 復式的 多數的 多樣的。2 倍數的 倍。3 【電學】並聯的；多路的 復接的。4 【植物...
- diffraction : 分解
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The diffraction efficiencies of multiple holograms recorded and fixed in different number of batches are calculated and analyzed. if a special exposure schedules calculated based on the characteristic time constants of batch fixing scheme is incorporated for equalized diffraction efficiency, the greater the number of batches is, the higher the equalized diffraction efficiency of fixed holograms
結果表明，採用分批存儲熱固定技術，所分的批次數越多，經等衍射效率曝光時序記錄后的全息圖最終達到的等衍射效率值越高，並且所有全息圖的寫入曝光時間值越接近。 -
An optimized cvi - pip process has been achieved, by which the c / sic composites with 2. 1 ig / cm3 high density and uniformity are fabricated in 200 hours. the microstructure and composition of pyrolytic carbon interphase and cvi - pip silicon carbide matrix in the c / sic composites are investigated with the help of polarization microscope, scanning electron microscope, and x - ray diffraction technique, etc. the structure characteristic of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and effects of cvi - pip process on it are summarized and discussed. by growth course and feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix analyzed, a whole - course densification mechanism of lamellar - growth - pattern is proposed to explain the densification phenomenon, which makes a systematic understanding on the feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and the multiple stitching interface binding
根據熱解碳中間相、 cvi - pip系sic基體相的組織構成與外貌特徵，通過對熱解碳中間相、 cvi - pip系sic基體相的生長過程和生長特徵進行分析，提出了基於層生長模式的緻密化過程理論，解釋了熱解碳中間相、 cvi - pip系sic基體相以及釘扎誘導結構多重界面的形成： （ 1 ）在1150下， cvi - sic亞基體相遵從「過飽和?凝聚?融合」機理沉積，以8f型? sic為主，同時還會有少量4h型? sic ，無游離si和游離c存在； （ 2 ） pip - sic亞基體相由非晶態sic以及彌散分佈的- sic微晶、 si - o - c和游離c組成； （ 3 ）熱解碳中間相與碳纖維增強相之間、 cvi - sic亞基體相之間形成滲透釘扎結構過渡界面， pip - sic亞基體相與摘要cvi一sic亞基體相之間形成誘導結構過渡界面。
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