multiple extreme 中文意思是什麼

multiple extreme 解釋
多重極值
  • multiple : adj 1 多重的;復合的 復式的 多數的 多樣的。2 倍數的 倍。3 【電學】並聯的;多路的 復接的。4 【植物...
  • extreme : adj 1 極端的;過激的 (opp moderate)。2 極限的,非常的。3 盡頭的,末端的。4 〈古語〉最後的,臨終...
  1. The metabolism of these extreme microbes during the production of maotai liquor would further produce multiple enzymes of thermal stability such as amylase, protease, saccharifying enzyme, cellulose, glucase, xylanase, and each kind of dehydrase involved in redox reaction, and dna polyase etc

    茅臺酒釀造過程中極端釀酒微生物代謝產生多種熱穩定性的酶,如澱粉酶、蛋白酶、糖化酶、纖維素酶、葡萄糖甘酶、木聚糖酶、參與氧化還原反應的各種脫氮酶、磷酸烯醇丙酮酸激酶及dna聚合酶等。
  2. The processing speed and precision adsolutely ezceeds type of machine made by the states or japan as truly reaches extreme precision, time saving, hign efficiency of professional and multiple function of grinding tool

    加工速度及精密度絕對超越歐洲、美國、日本製造之任何機種,真正達到極精密、省時間、高效率的專業用全功能研磨加工利器。
  3. The wakefield excited by an ultrashort and ultrahigh laser pulse propagating through tenuous plasma can accelerate electrons to extreme high energy. this can be used as a mechanism to design minitype electron accelerator. this thesis is devoted to studying those issues relevant to the wakefield accelerator, namely the laser wakefield accelerator ( lwfa ), laser wakefield accelerator driven by multiple pulses ( mp - lwfa ), plasma beat wave accel - erator ( pbwa ) and self - modulated laser wakefield accelerator ( sm - lwfa )

    本文的目的是:利用粒子模擬方法,研究和比較激光尾流場加速電子的四種主要方案:短脈沖激光尾流場加速( lwfa ) 、多脈沖激光尾流場加速( mp - lwfa ) 、拍頻束尾流場加速( pbwa ) 、自調制激光尾流場加速( sm - lwfa ) 。
  4. Extreme ultraviolet lithography ( euvl ) represents one of the promising technologies for supporting integrated circuit ( 1c ) industry ' s lithography needs during the first decade of the 21st century. this technology builds on conventional optical lithography experience and infrastructure, uses 11 - to 14 - nm photon illumination, and is expected to support multiple technology generation from 65 nm to 35 nm

    極紫外投影光刻( euvl , extremeultravioletlithography )技術作為下一代光刻技術中最佳候選技術,建立於可見/紫外光學光刻的諸多關鍵單元技術基礎之上,工作波長為11 14nm ,適用於製造特徵尺寸為65 35nm的數代超大規模集成電路,預計在2006年將成為主流光刻技術。
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