n-p-n-p 中文意思是什麼

n-p-n-p 解釋
三結器件
  • n : 1. 【羅馬數字】90〈N＝90000〉。2. 【化學】＝nitrogen. 3. ＝North（ern）。N ＝nuclear 核的：N-waste 核廢料。
  • p :
  1. Syntheses and crystal structures of rare earth complexes with n - p - tolysulfonyl - - alanine

    配合物的合成及晶體結構
  2. The analysis of the effect of n, p and k on amylose content

    三要素對水稻直鏈澱粉含量的影響
  3. Synthesis of glucosyl esters of p -. n, n - bis 2 - chloroethyl amino benzoic acid

    氮芥苯甲酸糖酯的合成
  4. Dynamic change of related biochemical substance in leaf of burley tobacco grown in the soil with various n, p, k fertilizer during growth and development

    鉀營養條件下白肋煙生長發育過程中有關化學物質的變化動態
  5. The annual productive capacity of the major products are : 13. 8 thousand tons of melamine, 400 thousand tons of urea, 100 thousand tons of calcium carbide, 4000 tons of dicyanamide, 11 thousand tons of white carbon black, 10 thousand tons of edible liquid co2, 20 thousand tons of calcium cyanamide, 30 thousand tons of methanol, 10 thousand tons of formaldehyde, 50 thousand tons of n. p. k. compound fertilizer, 200 tons of guanidine nitrate and 500 tons dissolved acetylene. the calcium carbide is the fine quality product awarded by the state

    主要產品生產裝置能力為：年產總氨28萬噸，實物尿素45萬噸三聚氰胺1 . 35萬噸精甲醇3萬噸食品二氧化碳1萬噸電石10萬噸石灰氮2萬噸雙氰胺4000噸溶解乙炔500噸甲醛5萬噸白炭黑1 . 2萬噸熱電廠裝機容量3 . 6萬千瓦，年發電3億千瓦時，供熱450萬吉焦耳機械廠年機加工量2000噸綜合廠復混肥5萬噸。
  6. ( 2 ). the calculations further confirm that the competion between the coriolis force and n - p coupling interaction in the low k space might be the possible dominating mechanism for si in odd odd nuclei

    （ 2 ） .進一步證實了在低k空間中， n - p相互作用與科氏力的競爭是奇奇核旋稱反轉的一種可能的主要機制。
  7. ( 4 ) the hugoniot of the mixture of mgo ( mw ) and sio2 ( st ) were calculated by the additire principle of hugoniot for mixture, and compared with the experimental hugoniot of enstatite. the results shows that there exists large difference between both d - u relationship and p - n curve for the two hugoniot

    516u （ 4 ）用混合物hugongiot線的疊加性原理計算了mgo （ mw ）和引。 （ st ）混合體系的hugongiot線，經過與頑火輝石實驗hugongiot數據對比，無論是從心關系還是從一產關繫上看兩者均有較大差距。
  8. So we consider five financial indexes includes stock b / p, e / p, current stock size, current stock stru and financial levge by the international tradition, then descriptive statistical test method and cross section statistical test method proved that b / p and current stock size have marked effect on the securities yield besides coefficient b. in the third chapter, the article fut forward a risk factor model, estimates yield sequences of every risk factor by weight regression, and then estimates each risk factor coefficient of different stock by time sequence regression, at last we can reckon the portfolio risk o2p and yield rp which consists n stocks

    結合國際慣例，文章考慮了股票的凈值市價比（ b p ） ，市盈率倒數（ e p ） ，流通規模（ size ） ，流通比例（ stru ）和財務杠桿（ levge ）等五個財務指標，應用描述性統計檢驗和橫截面統計檢驗等多種方法，結果表明，除系數以外，凈值市價比（ b p ）和流通規模（ size ）對證券收益率部有重要的影響。在論文的第三章，提出了一個基於多因素的風險因子模型，並用加權回歸和時間序列回歸等方法估計出了不同證券的各風險因子系數（類似於單指數模型中的系數） ，據此，即可衡量出一個包括n只股票的組合的風險_ p ~ 2和收益率r _ p 。
  9. The glass adherence craft has avoided the temperature, humidity, machinery fatigue and medium to the glue water and material influence, and then improved the sensor long - term stability in the industry ambient, in the meanwhile also avoided the sensor p - n effect phenomenon that appeared in the traditional micro machining operation manufacture process

    玻璃粘接工藝避免了溫度濕度機械疲勞和介質對膠水和材料的影響，從而提高了傳感器在工業環境中的長期穩定性能，同時也避免了傳感器在傳統微機械加工製造工藝過程中出現的p - n結效應現象。
  10. Stock g n ， greis n p ， kasarda j d. enterprise logistics and supply chain structure : the role of fit j. journal of operations management ， 2000, 18 ( 5 ) ： 531 - 547

    [賈燕.供需鏈設計優化模型及其復雜性問題研究[ d ] .西安：西北工業大學製造自動化軟體與信息研究所
  11. The compact minimal submanifold of a locally symmetric and conformally flat riemannian manifold are studied, and obtain the following intrinsic rigidity theorem. i. e. if m be a compact minimal submanifold of a locally symmetric and conformally flat riemannian manifold n ( superscript n + p )

    摘要研究了局部對稱共形平坦黎曼流形的緊致極小子流形，即設m是局部對稱共形平坦黎曼流形的n維緊致極小子流形，得到了這種子流形的若干內蘊剛性積分不等式，給出了流形全測地的限制條件。
  12. Detail specification for low power silicon n - p - n switching transistors - 65 v, planar epitaxial, ambient rated, hermetic encapsulation - full plus additional assessment level

    小功率硅p - n - p型開關晶體管詳細規范. 65v平面外延額定環境條件密封封裝.全面附加評定級
  13. Under 40cm, the contents are about 60mg / kg. 3. under the different site types, the contents of soil organic matter, total n, available n, p, k have no obviously difference. but the height of the robinia pseudoacacia, the cap of the robiniapseudoacacia, the diameter of the robinia pseudoacacia above one meter of ground, the length of new branch have the similar disciplinarian : semi - shady > sunny > semi - sunny no matter what may, july, september

    不同立地條件下土壤有機質、全氮、有效氮、速效磷和速效鉀含量差異不顯著，但刺槐的株高、冠幅、胸徑、新枝卻有明顯的差異，無論是5月份、 7月份還是9月份、其株高、冠幅、胸徑、新枝長度從大到小順序均是：半陰坡半陽坡陽坡。
  14. N. p. n. nonprotein nitrogen

    非蛋白氮
  15. . detail specification for low power silicon n - p - n switching transistors - 20 v, planar epitaxial, ambient rated, hermetic encapsulation long lead version - full plus additional assessment level

    小功率硅n - p - n型開關晶體管詳細規范. 20v平面外延額定環境條件密封封裝
  16. . detail specification for low power silicon p - n - p switching transistors - 65 v, planar epitaxial, ambient rated, hermetic encapsulation long lead version - full plus additional assessment level

    小功率硅p - n - p型開關晶體管詳細規范. 65v平面外延額定環境條件密封封裝
  17. Detail specification for low power silicon p - n - p switching transistors - 65 v, planar epitaxial, ambient rated, hermetic encapsulation - full plus additional assessment level

    小功率硅p - n - p型開關晶體管詳細規范. 65v平面外延額定環境條件密封封裝全面附加評定級
  18. Detail specification for low power silicon p - n - p switching transistors - 25 v, planar epitaxial, ambient rated, hermetic encapsulation - full plus additional assessment level

    小功率硅p - n - p型開關晶體管詳細規范. 25v平面外延額定環境條件密封封裝全面附加評定級
  19. Detail specification for low power silicon n - p - n switching transistors - 20 v, planar epitaxial, ambient rated, hermetic encapsulation - full plus additional assessment level

    小功率硅n - p - n型開關晶體管詳細規范. 20v平面外延額定環境條件密封封裝.全面附加評定級
  20. . detail specification for low power silicon n - p - n switching transistors - 65 v, planar epitaxial, ambient rated, hermetic encapsulation long lead version - full plus additional assessment level

    小功率硅n - p - n型開關晶體管詳細規范. 65v平面外延額定環境條件密封封裝
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