nanocrystalline silicon 中文意思是什麼
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Preferred growth of nanosized crystal silicon in doped hydrogenated nanocrystalline silicon film
薄膜中納米硅晶粒的擇優生長 -
Structure characteristics and piezo - resistance effect in hydrogenated nanocrystalline silicon films
摻磷納米硅薄膜電導及壓阻效應的研究 -
In this thesis, the structure, preparation method and basic properties of embedded nano - composite materials and photo luminescence of nanocrystalline silicon have been summarized. research of photoelectric devices using several kinds of silicon - based nano - materials has also been presented
本論文全面介紹了納米材料，特別是納米鑲嵌復合材料的結構特徵、性能特性及由此產生的基本性質的變化、常用的制備方法以及硅基納米復合材料在制備和發光機理方面的研究，並對硅基納米復合材料在光電器件中的應用和發展做了概述。 -
In this thesis, the history, structure. preparation method and basic properties of nano - composite materials and photoluminescence of nanocrystalline silicon have been summarized. research of the novel antireflecting energy saving coating glass has also been presented. the si / sic composite films are prepared with siht and ? 2 ^ 4 as the source gas by atmosphere pressure chemical vapor deposition ( apcvd )
本論文全面介紹了納米材料，特別是納米鑲嵌復合材料的發展概況、特性、常用的制備方法、常見的幾種硅系納米材料以及有關納米硅材料的發光，並對新型無光污染節能鍍膜玻璃的研製和發展作了概述。 -
In this paper ， first, the author drew some important conclusions by analyzing several technical factors and experimental conditions which would have great influence on the quality of diamond thin films during mpcvd process ， including gas proportion ， the power of microwave ， the plasma ' s location, the nucleation technique, etc. finally ， the author has successfully deposited nanocrystalline diamond thin films with 300nm crystal particles on the slick surface of silicon by using ch4 / h2 gases in the mpcvd system ， and the nanocrystalline diamond thin films was proved to have good field emission performance. all these researches will make the foundation for the field emission cathode of diamond films
本論文中，作者分析了mpcvd方法中氣源成分比、微波功率、等離子體球的位置、成核技術等各種工藝條件對金剛石薄膜質量的影響，並總結得到了一些有意義的結論；同時，在自行研製的mpcvd沉積系統上，於4 - 7kpa 、 1000左右的熱力學條件下，採用ch4 / h2氣源氣氛在光滑的硅襯底上制備出了晶粒尺寸在300納米以下的納米晶金剛石薄膜，測試得到了較好的薄膜場致電子發射性能，為金剛石薄膜場致發射冷陰極的研究工作打下了實驗基礎。 -
Bulk silicon has an indirect energy bandage and is therefore highly inefficient as a light source. it is hard to get the goal of luminescence devices. nanocrystalline silion ( nc - si ) have many difference from bulk silicon, such as structure, the capability of optics and photoelectricity
單晶硅是間接帶隙材料，其帶間輻射復合效率非常低，難以達到發光器件的要求，與之相比，納米硅晶在結構、光學及光電性能方面與單晶硅不同，它在發光器件、光探測器件、光電集成以及傳感器等領域有更廣闊的應用前景。 -
The model of the photoluminescence of the nanocrystalline silicon can explain the result
納米硅的表面態發光模型能較好地解釋實驗結果。
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