negative resistance 中文意思是什麼

negative resistance 解釋
負阻, 負電阻
  • negative : adj 1 否定的 否認的；拒絕的 （opp affirmative）； 反對的 反面的；消極的。2 （opp positive） 【電...
  • resistance : n. 1. 抵抗，反抗，抗拒，抵禦；敵對，抵抗力，反抗力，阻力，【生物學】抗病性。2. 【電學】電阻；阻抗；電阻器。
  1. Antibiotics resistance analysis of gram - negative bacilli

    革蘭陰性桿菌抗生素耐藥分析
  2. This product is the newest filming technique, the latest achievement of usa electronic magic, it utilizes decomposition principle of electronic material to form a positive negative ions film on the surface of car coating, which has high water repellency and makes the surface of coat has more than 95 % brightness of mirror surface, lt has preeminent performance on weathering resistance, ageing resistance, oxidation resistance static resistance and wear resistance, with the force of charged ions, this product can easy removes the dirt, water drop acid rain and grease on the surface of the film and perennially and effectively protect coat surface, lt is the fourth generation car beauty and protective product which replaces glaze sealing products

    本品屬于當今最新的鍍膜技術，屬美國電子工學魔法的最新成果，它利用電子物質的分解原理，在車漆表面生成持有高撥水性的正負離子覆膜，使漆面光亮度可達鏡面光澤的95 %以上，並具有超強的耐候性、抗老化、防氧化、防靜電、耐磨性極好的功能，它利用電離子的力量，可輕松彈去覆膜表面的污垢、水滴、酸雨、油脂等，平時只需清水沖洗，便可立即使之恢復離子效應，達到長期保護漆面的目的，是取代封釉的第四代汽車美容保護產品。
  3. ( 3 ) it is known that load effect is not consistent with the section resistance incommon section continuous composite beam. a kind of composite beam with itsrational section size is suggested, which is consist of the t shape concrete beam andsteel girder. this kind of composite beam not only has enough carrying capacity, almost has same positive and negative resistance moment, but can decrease theamount of the steel

    （ 3 ）分析可知連續組合梁的跨中、支座截面處荷載作用效應及截面抗力規律不匹配，本文提出了採用t形混凝土梁和工字鋼代替一般的混凝土板和工字鋼的組合梁截面形式，並給出了截面尺寸比例，能使正負截面抵抗矩接近，符合組合梁受力特徵，減少了材料用量，滿足承載力和剛度等要求。
  4. In effect, a negative resistance is inserted in the circuit so that its total resistance is zero.

    實際上，這就是把負電阻接入電路，使電路的總電阻為零。
  5. All the experiment analyses are presented in chapter 3, including the lodging of negative resistance effect based on the measurement of the parameters of ga - diffusion trans

    結構中近硅表面微區域濃度的變化規律， ga擴散過程的三個階段包括預沉積、再分佈和二次氧化，對應于ga在a
  6. A novel high output resistance current source based on negative resistance

    一種基於負電阻的高輸出阻抗的電流源
  7. Negative resistance amplifier

    負阻放大器
  8. Negative resistance oscillation

    負阻振蕩
  9. Negative resistance effect

    負阻效應
  10. The junction voltage decreases with the increase of current above 10ma. there is an effect of the negative resistance

    當結電流增至20ina以後，隨電流的增加，結電壓減小，出現負阻現象。
  11. Current research of the technique of ga diffusion and the negative resistance effect of open - tube ga - diffusion transistor are emphasized

    重點介紹了目前開管ga擴散工藝的發展現狀和開管擴鐮晶體管負阻效應的研究現狀。
  12. Even though much has been devoted to the research of it, the mechanism of the negative resistance effect and the effective means to reduce it are rarely reported

    盡管前人對負阻現象作了不少研究，但負阻存在的機理、減小負阻的有效措施等問題卻鮮見報道。
  13. Yet the outstanding shortcoming of open - tube ga diffusion is the apparent negative resistance effect in the ic - vce characteristic curve, which is not what we hope

    盡管如此開管擴鎵的突出缺點是在特性曲線中的負阻效應較為明顯，負阻現象的存在是我們不希望的。
  14. The u - i properties of the samples at room temperature and cryogenic temperature ( 77k ) were measured by three - point method, and it was found that there is an effect like negative resistance in such multilayer films

    本文採用三點法測定了常溫、低溫下的u - i特性，發現常溫、低溫下納米量級的硅氧化硅多層膜具有類似負阻的特性。
  15. In the thesis, negative resistance character curves of magnetic - transistor has been analyzed simply and discussed so that ideal design project has been presented to further enhance magnetic - transistor magnetic sensitivity

    本文同時對實驗結果中所出現的硅磁敏三極體樣品負阻特性曲線進行簡單分析、討論，為進一步提高硅磁敏三極體磁靈敏度等性能提出了優化的設計方案。
  16. The same with normal metal film, fe0. 3cu0. 7 ( 500nm ) granular film have positive coefficient of temperature. the negative resistance is observed in fexcu ( 1 - x ) granular film under certain condition. this characteristic of negative resistance is weakened or changed to positive with the change of thickness of film, ratio of fe atom to cu atom, anneal, test temperature

    N ） fecu顆粒膜月一i特性研究發現，極小電流下電阻測量具有不確定性； fe cu矚00川）顆粒膜己與普通金屬薄膜一樣，具有正的溫度系數； f民c山x顆粒膜在一定條件下存在負阻現象，並且隨顆粒膜厚度、鐵銅原子比、退火條件、溫度的改變分別存在負阻特性的減弱或向正阻特性的轉變。
  17. The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.

    論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。
  18. It also gives the motive of the ka - band vco and mixer, associated with the subject ' s requirement and the realistic conditions, according to which a proposal is confirmed that the gunn diode and the varactor are mounted in the same cavity to fulfill the vco and an antiparallel diode pair is used to fulfill the harmonic mixer. in chapter 2, based on the basic theory of negative resistance oscillating, we analyses the gunn oscillator and it ’ s tuning character. chapter 3 introduces the theory of millimeter - wave harmonic mixer

    以此為根據結合課題需要和實驗室的實際條件，確定vco採用耿氏管腔體振蕩器形式，變容管與耿氏管安裝在同一個腔內以進一步減小體積，採用反向並聯二極體實現諧波混頻;第二章介紹負阻振蕩器理論及其調諧原理;第三章介紹毫米波諧波混頻器基本原理;第四章給出了振蕩器及諧波混頻器的設計過程，整個組件聯調的結果;最後是結束語，分析了電路中存在的問題，指出了改進方向。
  19. Also the green silicon carbide has a negative resistance temperature characteristic from room temperature to approximately 1200 f ( 650 c )

    這種新型的碳化硅除在室溫至1200 ? f （ 650 ? c ）范圍內其存在負阻值。
  20. Compared with gunn diode, mesfet has the advantage of high efficiency, flexible design and easy to integrate. the two ports negative resistance oscillating network is analyzed and an extremum - line model of microwave transistor oscillating network output impedance is developed

    Mesfet較之gunn二極體在vco電路中有效率高、設計靈活性、便於集成等優點，所以本文著重介紹了變容管調諧微帶結構mesfetvco的研製工作。
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