neutron-irradiated 中文意思是什麼
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The degradation of the electrical characteristics in sic pn junctions irradiated by neutron is attributed to the recombination centers and the electric field effect on the thermal emission of traps within the depletion region. the relationship of the ideality factor to the applied voltage is theoretically studied
提出了中子輻照下sicpn結電特性退化的新的理論， pn結耗盡區中的輻照陷階在耗盡區電場的作用下熱發射效應得到加強，從而導致pn結正偏和反偏時的復合電流和產生電流的改變。 -
Irradiation defects decompounded and recombined with oxygen impurity and large quantity of nucleation centers were introduced in czsi bulk during annealing at 1100. in nitrogen atmosphere, more defects were induced in fast neutron irradiated czsi than in argon atmosphere
不同氣氛下快中子輻照直拉硅中缺陷形成的差異很大， 1100的高溫退火中，與氬氣氛相比，氮氣氛退火樣品中出現了更多缺陷。 -
In order to verify the reliability and validity of the heavy ion irradiation simulation of neutron and proton irradiations, radiation damage and its thermal annealing behavior in a - al2o3 irradiated at the equivalent dose by 85 mev 19f ions and by en > 1 mev neutrons, respectively, are studied
為驗證重離子模擬輻照的可行性，首先進行了等效劑量下的中子輻照與重離子輻照后- al _ 2o _ 3樣品中輻照損傷及其退火效應研究。 -
The band was previously associated with f - type color centers and v - type color centers, as analyzed in x - ray irradiated ysz sample. however, the absorption band observed in our experiments has a shift towards the longer wavelength ( red shift ) as comparing with that in the x - ray or neutron irradiated ysz spectra. this shift may mainly due to large local distortions near the f - type centers and the v - type centers and the presence of multiple color centers
本文通過光吸收、光熒光、 tem 、 xps測試及trim96計算分別研究了不同注量xe ~ +注入ysz前後光學性能和缺陷形態變化，以及ni ~ +注入對不同摻雜單晶al _ 2o _ 3結構和光學性能的影響，得到以下結果： （ 1 ） ysz注量達到10 ~ （ 16 ） cm ~ （ - 2 ）時，開始出現由f型和v型色心重疊而產生的吸收帶，與x射線、中子輻照相比，重離子輻照產生了更為復雜的缺陷復合體而導致吸收峰紅移。 -
The new vibrational infrared absorption band at about 485cm - 1 was annealed at about 400. it was difficult to annealing v - o complex in fast neutron irradiated si under 600 for 1h
同時快中子輻照后硅中產生v - o復合體等缺陷，在低於600 、 1小時的退火也難以消除，表明快中子輻照直拉硅中的氧相關缺陷更加復雜。 -
( 3 ) through the study of electrical property of irradiated rutile by high - dose neutron, the curse of relationship of conductivity and temperature has been abtained. according to this relationship, the conducting behavior in diflrent temperature is also studied
本論文工作還對高注t中子輻照后金紅石晶體的電學特性進行了研究，得到了它在空氣和真空中的電阻與溫度的關系，分析了各個溫區的導電機制。 -
A model of the sic pn junctions irradiated by neutron is presented. the effects of radiation induced oxide trapped charge and sic / si02 interface state density on inversion layer mobility is studied systematically
在輻照的電離效應方面，研究了輻照在sicmos氧化層中引入的陷阱電荷對mos溝道反型層遷移率的影響。 -
A new vibrational infrared absorption band at about 485cm - 1 appeared commonly in spectra of czochralski - grown and float - zone - grown silicon irradiated with fast neutron
在輻照硅中，實驗發現了一個新的紅外吸收峰，其波數為485cm ~ （ - 1 ） 。
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