o annealing 中文意思是什麼

o annealing 解釋
低溫退火
  • o : int 〈常用大寫字母〉哦 喲 …啊 唉 哎呀〈表示驚訝、恐怖、贊嘆、願望等〉。 O for a rest 唉 休息休息...
  • annealing : 熱處理
  1. The zn / o ratio, c - axis orented and stress were improved by annealing, and also redusing the defect of zno flim, increasing the size of grain. but too high annealing temperature was adverse to recrystallization of zno thin film

    退火能改善zno薄膜的鋅氧比、 c軸的擇優取向和應力狀態,減少薄膜中的缺陷,使晶粒長大,但是過高的退火溫度不利於zno薄膜的重結晶,使zno薄膜的質量變差。
  2. In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth

    本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體,用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級,達到了10 ~ ( - 10 ) ( cm ) ~ ( - 1 ) ,解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難;對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究,通過優化生長工藝技術參數,突破了工藝技術生長難關,得到了高光學均勻性、具有大z切面的ktp單晶。
  3. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備,在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時,用氬、氫混合束對沉積膜作高劑量的離子束轟擊,使得被氬離子轟擊后斷鍵的氧化釩分子,再被注入氫降價,然後經適當的退火,成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜(國外報道值為2 - 3 ) ,並研製了單元懸空結構探測器和8 1 , 16 1線性陣列。
  4. Abstract : reasonably combining the parallel structure of genetic algorithm with the controllable jumping property of simulated annealing, a class of effective and general hybrid optimization strategy is proposed and applied t o estimate the parameters of various kinds of models

    文摘:合理融合遺傳演算法的并行搜索結構和模擬退火的可控性概率突跳特性,構造了一類高效的混合優化策略,並用於多種類型模型的參數估計。
  5. The new vibrational infrared absorption band at about 485cm - 1 was annealed at about 400. it was difficult to annealing v - o complex in fast neutron irradiated si under 600 for 1h

    同時快中子輻照后硅中產生v - o復合體等缺陷,在低於600 、 1小時的退火也難以消除,表明快中子輻照直拉硅中的氧相關缺陷更加復雜。
  6. As a result 4 the rising annealing temperature induces si02 phase to form, also ivolves the formation of a si phase. in high - temperature - annealed sio ~, films the excess silicon atoms are present as si - si4 tetrahedra, randomly dispersed in the amorphous si02 matrix. photoluminescent spectra were observed for the samples excided by the laser whose wavelength is 365nm. the pl peak is located at about 445nm, which dose n ' t shift as the annealing temperature changes. as the annealing temperature is raised, the luminescent intensity increases. the phenomena suggest that the si - o - si bond as a defect center which is broken down by the stress at the si nc / si02 interface is the primary source of blue luminescence

    這個陡的界面由於明顯的晶格結構的差別而有較大的應力。界面的形成伴隨著界面發光中心的增加,同時pl強度在l戶800有一個大的增強。這個結果提示我們,界面上h 0 s工鍵斷裂形成的nbohc應是藍光發射的主要原因。
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