ohmic 中文意思是什麼

ohmic 解釋
adj. 形容詞 1. 歐姆的。
2. 以歐姆計算的。
3. 使用歐姆定律的原理裝置的。

  1. However, internal battery ohmic contains complex and alternant components and cannot be detected by common ways

    然而，電池內阻包含著復雜的而且是變化著的成分，無法用一般的方法進行精確測量。
  2. A material obeying ohm's law is called an ohmic conductor or a linear conductor.

    凡是遵守歐姆定律的材料，都叫做歐姆導體或線性導體。
  3. Ohmic resistance measured between the output voltage connections

    輸出電路測得的電阻歐姆
  4. Study of ohmic contact to gan hemt epilayers

    外延材料歐姆接觸的研究
  5. Ohmic resistance measured between the supply voltage connections

    供電電路中測得的電阻歐姆。
  6. Fabrication of ohmic contacts to 4h - sic created by ion - implantation

    離子注入層的歐姆接觸的制備
  7. Non - ohmic resistor

    非奧姆電阻器
  8. Non - ohmic conductor

    非奧姆導體
  9. Base ohmic contact

    基極歐姆
  10. Aerospace series - cables, electrical, aircraft use - test methods - ohmic resistance per unit length

    航空航天系列.飛行器用電纜.試驗方法.單位長度的歐姆電阻
  11. Abstract : introduce the principle of ohmic heating technology and it ' s system application in food disinfection

    文摘:介紹電阻加熱技術的原理及其系統在食品殺菌的運用。
  12. A mathematical model for the anode of a direct methanol fuel cell ( dmfc ) considering the mass transport in the whole anode compartment and the proton exchange membrane ( pem ), together with the kinetic and ohmic resistance effects through the catalyst layer is developed. the influences of key parameters on methanol crossover and anode performance are investigated

    對于dmfc的陽極，本文描述了甲醇和水在陽極及質子交換膜（ pem ）中的傳遞過程、反應動力學和歐姆阻抗效應，建立陽極和pem的數學模型，並探討對甲醇擴散和陽極性能影響的主要因素。
  13. The main work includes three contents as followings : 1, the situation of ohmic contact about al electrode, ti / al electrode on n - gan in different annealing conditions are investigated

    主要工作如下： 1 、研究了al單層及ti al雙層電極與n型gan在不同退火條件下的歐姆接觸情況，並用挖補圓盤法計算出接觸電阻率。
  14. The procedure to modify the sss code is as follow : at first the hom eos ( equation of state ) is replaced by the sesame eos, secondly the magnetic force is added to the momentum equation, the ohmic heating rate is added to the energy conservation equation

    對sss程序改造過程大致如下：首先以sesame數據庫物態方程替換sss程序原有的物態方程；其次在動量守恆方程中加上洛侖茲力項，在能量守恆方程中加上單位質量焦耳加熱項，通過麥克斯韋方程推導出磁擴散方程。
  15. Due to its advantages of high power capacity, weak dispersion, easier fabrication and low ohmic losses, the folded rectangular groove guide would be an excellent slow - wave structure in millimeter and submillimeter wave twts

    曲折矩形槽波導結合了曲折波導散熱能力強、色散特性好、容易加工和矩形槽波導單模工作、低損耗、大尺寸等優點，因此這種新型的慢波系統有可能在毫米波及亞毫米波段的行波管中具有較好的發展前景。
  16. Studies on metal - semiconductor contacts of 6h - sic and some interrelated processes condensed - state physics postgraduate : wu ruibin director : gong min the manufacturing processes as well as electrical and thermal characters of 6h - sic ohmic contacts have been studied in this work. in addition, we fabricated au and ni schottky barrier diodes ( sbds ) on silicon surface of n - type 6h - sic

    本文討論了n型6h - sic歐姆接觸的制備工藝及其基本電學及熱學特性，並在此基礎上採用金屬au及ni在n型6h - sic硅面（ 0001晶向）上制備了具有一定特性的肖特基勢壘二極體。
  17. The epitaxial struture for ld is an ingaas / gaas / algaas ssqw grin sch structure and the width of the array bar ia 4mm. the low theshold current 2. 9a the output power 20w at 17. 5a have been achieved by sioi isolation, ohmic contact and facet coating processes. the central wavelength is 979nm. at the same time, model analyses on the structure of the ssqw ld and the fabrication processes have been made for further research

    激光器的生長結構採用ingaas / gaas / algaas分別限制應變單量阱線性緩變折射率波導結構，列陣條寬為4mm ，通過sio _ 2掩膜，歐姆接觸和腔面鍍膜等工藝，實現了閾值電流為2 . 9a ，驅動電流為17 . 5a時輸出功率為20w 。
  18. For the purposes to make cd1 - xznxte detector, ohmic contact materials of cd1 - xznxte crystal are selected and structure of electrode is designed. the processing of conducting film prepared by the magnetron sputtering is studied

    本研究主要開展了在cdznte晶體上歐姆接觸電極的設計選材和磁控濺射方法制備導電薄膜的工藝研究，為cdznte探測器的制備奠定工藝技術基礎。
  19. One of the most key technologies of preparing cd1 - xznxte detector is to make ohmic contact film electrode on cd1 - xznxte crystal ' s surface, and the main technology usually used is evaporation, but the cohesion of evaporated film is n ' t very firm

    制備cdznte探測器最關鍵的技術之一就是在cdznte表面制備出歐姆接觸薄膜電極。關于在cd _ （ 1 - x ） zn _ xte晶體表面制備接觸電極用導電薄膜，大都是採用蒸發鍍膜技術，膜層與cdznte晶體結合不很牢固。
  20. The results show that crystal inhomogeneities and suitable contacts are critical to the fabrication of high quality cdznte spectrometers. the modified growth technique is a new and promising method for growing highly pure and perfect cdznte single crystals. good quality ohmic contact detectors are achieved when gold or indiumare deposited as electrodes on polished and chemically etched surface

    結果表明：材料內部的缺陷和歐姆接觸是影響器件性能的兩個關鍵因素，採用改進的富鎘氣氛下坩鍋旋轉下降法生長的晶體具有較低的缺陷濃度，適合製作探測器，採用au 、 c可得到歐姆接觸。
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