optical band gap 中文意思是什麼

optical band gap 解釋
光禁帶
  • optical : adj 眼的；視覺的；視力的；幫助視力的；光學（上）的。 optical activity 【物理學】旋光性。 an optic...
  • band : n 1 帶，繩；帶形物；箍；箍條；嵌條；鑲邊；鋸條； 〈pl 〉 （法官等的）寬領帶。2 束縛，羈絆；義務；...
  • gap : n 1 （墻壁、籬笆等的）裂口，裂縫；豁口，缺口。 【軍事】突破口。2 （意見的）齟齬，分歧；隔閡，距離...
  1. Either the boron nitride ( bn ) thin films with different cubic phase content were deposited on n - type si ( 111 ) and fused silica substrates by radio frequency ( rf ) sputtering using two - stage deposition process. the films were characterized by fourier transform infrared ( ftir ) spectroscopy. the transmittance te ( ) and reflectance re ( ) were obtained as a function of incident photo wavelengths and the thickness of films was measured by alpha - step. the absorption coefficient was calculated from te ( ) and re ( ). the optical band gap ( eg ) of the films was determined by effective medium form of formula containing eg

    本文還研究了立方相含量與光學帶隙的關系，在n型si （ 111 ）片和熔融石英片上沉積出不同體積分數的立方氮化硼薄膜，薄膜的成分由傅立葉紅外吸收譜標識；用紫外-可見分光光度計測量了沉積在石英片上的bn薄膜的透射光譜te （ ）和反射光譜re （ ） ，薄膜的厚度用臺階儀測得。
  2. On the basis of uv - vis transmissive spectra, the sputtered films have absorption peaks toward longer wavelength, and the calculation shows the lower optical band gap

    適當的摻雜量可以產生新的吸收峰，增加對長波段光的吸收，提高光催化效率。
  3. Tin sulfide ( sns ) has an optical band gap of 1. 3ev, which is close to the optimal band gap 1. 5ev

    Sns的光學直接帶隙為1 . 3ev ，接近於太陽能電池材料的最佳禁帶寬度1 . 5ev 。
  4. The ultraviolet absorption edge becomes steep and moves to longer wavelength, and the optical band gap decreases. the optimal quality and ultra - violet absorption property of the zno thin film annealed at 450 are obtained

    中性氣氛中退火薄膜的電阻率基本不變，在真空和還原氣氛中薄膜的導電能力增強，而在氧化氣氛中薄膜的電阻顯著增加了七個數量級，成為絕緣薄膜。
  5. Optical absorption measurements show that mnxcd1 - xin2te4 is a direct energy gap semiconductor and the band gap shifts towards the high energy side with the increase of x

    採用光吸收法測得mn人d n 。 te 。晶體屬于直接帶隙半導體，其能隙eg隨著組分互的增加線性增大。
  6. Quantum confinement effect was observed in the films by measurements of absorption spectrum of ge - sio2 films. the widening of optical band gap of the amorphous films seems to be related to the function of the quantum confinement on the impurities or defects in the films

    光吸收特性研究表明，因量子限域效應，對于ge - sio _ 2薄膜觀察到較強的光吸收和光吸收邊隨ge顆粒尺寸變小而藍移的現象。
  7. C60, a new type of semiconductor material, has many superior properties, such as wide forbidden band, direct band gap, rapid responding time, high optical damage threshold value and wide responding frequency band etc. these capabilities indicate that c60 film will be used widely in computer, integrate optical instrument and storage device etc. however, the preparation and the purification of c60 material affect the large - scale application at all times

    C _ （ 60 ）薄膜作為新的半導體材料具備許多優越特性，如禁帶寬度大、直接帶隙、快速響應時間、高的光學損傷閥值、較寬的響應頻帶等，這些性能預示了c _ （ 60 ）薄膜在計算機、集成光學器件、光存儲器等方面具有廣闊的應用前景，但c _ （ 60 ）材料的制備與提純還一直是阻礙該新材料投入大規模實際應用的主要因素。
  8. ( 4 ) the study of the optical band gap of cnx film by uv - vis spectrophotometer. ( 5 ) by using the microhardness tester, we study the hardness of cnx film on the ceremic substrate by dc magnetron reactive sputtering with the feed ar and n2 flow rate, film thickness, substrate temperature and substrate bias

    （ 5 ）用直流磁控反應濺射法，以陶瓷作為襯底，對在ar和n2不同流量、不同膜厚、不同基片溫度和對基片施加不同偏壓下沉積的薄膜，用< wp = 4 >顯微硬度計研究測試了不同工藝參數下的相應硬度。
  9. Diamond is a remarkable material due to its special crystal structure, which shows high hardness, low friction coefficient, high thermal conductivity, high optical transparency, low permittivity and high band gap etc. cvd diamond films are widely used in mechanical coating, heat sinks, optical window, semiconductor devices and other application fields because of its low price and high performance

    金剛石的特殊晶體結構使其成為一種性能優異的功能材料，它具有高硬度、低摩擦系數、高熱導率、高透光率、低介電系數和高禁帶寬度等性質。化學氣相沉積制備金剛石膜成本低、質量高，廣泛應用於工具塗層、熱沉、光學窗口、半導體器件等方面。
  10. So, the decrease of optical band gap and the increase of photosensitivity of a - si : h films is the result of the decrease of hydrogen content, especially incorporated as polydride

    因此， a - si ： h光學帶隙的減少以及光敏性的增加是膜中氫含量尤其是以多氫化合物結合的氫含量減少的結果。
  11. It is found that the microstructure and properties of as - deposited dlc films is seriously dependent on the substrate temperature used in deposition processes. with the increase of substrate temperature, sp 3c content in the deposited dlc film decreases, surface roughness and friction coefficient of deposited dlc films increase. at the same time, microhardness, residual stress and optical band gap became lower

    研究發現，基片溫度對dlc薄膜的結構和性能影響最明顯，隨著薄膜沉積過程中基片溫度的增加， dlc薄膜中的sp ~ 3c含量減少， dlc薄膜的表面粗糙度增加， dlc薄膜的顯微硬度降低， dlc薄膜的摩擦系數增大， dlc薄膜的殘余應力都是減小的，光學帶隙eg變窄。
  12. X - ray diffraction ( xrd ), uv - vis absorption spectroscopy and photoluminescence spectroscopy ( pl ) were employed to study the structural and optical properties of mgxzn1 - xo alloy thin films. the experimental results show that the films were hexagonal wurtzite structure and the band - gap of mgxzn1 - xo alloy thin films gradually increased with increasing mg content. the quality of mgxzn1 - xo alloy thin films can be greatly improved by means of annealing in oxygen ambient

    實驗結果表明，利用溶膠-凝膠法制備的mg _ xzn _ （ 1 - x ） o納米薄膜為六角纖鋅礦結構，粒徑為3 5nm ，隨著mg含量的增加帶隙變寬；通過在氧氣氣氛下退火處理后， mg _ xzn _ （ 1 - x ） o納米薄膜表現出了較好的結構和發光特性，表明熱處理可提高薄膜質量。
  13. The subst - itutional oxygen vacancies and tin contributing to its high conductivity. the high optical transmittance of ito films is a direct consequence of it being a wide band gap ( eg > 3ev )

    Ito結構中的氧空位和錫摻雜使得它具有很強的導電性，較大的能帶間隙寬度（ e _ g 3ev ）使得它具有很強的光透明性。
  14. At the same time, we also found optical band gap decreases and photosensitivity of a - si : h films increases with the increase of substrate temperature

    同時，我們也發現伴隨著襯底溫度升高，光學帶隙減少，光敏性增加。
  15. Their optical properties are characterized by z - can technique, uv - visible absorption spectrum and so on. the experimental results indicate that although large nonlinear refractive index is observed in two pbs / cds systems with different band gap, the sample of bigger band gap exhibit obvious nonlinear absorption in the range of nonresonance

    另外，我們改變制備條件，得到了光學帶隙不同的pbs cds納米復合體系，並採用z -掃描技術研究了它們的非線性光學性質。兩個樣品都具有大的非線性折射率，但光學帶隙大的樣品在非共振區域表現出明顯的非線性吸收。
  16. Then, after the structure and characteristic of awg is described in brief, we put emphasis on the deduce of the dispersion equation of ufbgs in the vicinity of its reflection band gap ( rbg ) in light of coupling theory. in terms of this equation, the dispersion compensation of the optical signal in every channel in the wdm system, which has eight channels, is calculated and analyzed theoretically. during the course, some important parameters of ufbgs in the compensator are computed

    在簡要敘述了陣列波導光柵的結構及其特性后，著重從光纖光柵耦合波理論導出了均勻光纖光柵在反射帶隙（ rbg ）外附近的色散特性方程，並根據這一特性方程，對8通路的wdm系統中各分亡巴八碩士學位論文tinv坯1 ： e 』 sthe狠波光信號的色散補償進行了數值計算與分析，由此確定補償器中各均勻光纖光柵的相關參數。
  17. Zinc oxide ( zno ) is a wide - band gap semiconductor that possesses excellent optical and electronic properties, and as a result it stimulates a broad range of researching interest. it shows great promising applications in ultraviolet lasers, solar cells, sensors and so on

    寬禁帶半導體zno材料由於具有優異的光電性能引起了人們廣泛的興趣，其在紫外激光器、太陽能電池、傳感器等方面有著廣泛的應用前景。
  18. By using the uv - vis spectrophotometer and data processing, we get to know that the carbon nitride films have a wide optical band gap of 4. 14ev, which is 2. 2ev lower than the theoratical band gap of 6. 6 0. 5ev

    通過數據處理，得到了吸收率譜，從而得出光能隙為4 . 14ev 。比理論計算值6 . 4ev 0 . 5小2 . 2ev 。這是因為我們的樣品是由非晶組成的。
  19. Moreover, the optical band gap was widened with the increase of li / zn moral ratio, but it decreased to 3. 37ev when li / zn moral ratio came to 0. 2, and the optical band gap was independent of mg / zn molar ratios

    此外合適量的li ： zflo和（ li ， mg ） ： zflofk膜在可見光區的平均透射率在80以上，而過多的摻入由於帶入了的緣故，使得其透過率下降。
  20. The shimadzu uv - 3101 spectrophotometer was employed to get the uv - visible transmission and reflection spectra. both of the absorption coefficient ( a ) and optical band gap ( eg ) were calculated from the transmission and reflection spectra of the films. it was observed that eg decreased with an increase in the deposition pressure

    採用紫外-可見光分光光度計測定了納米- sic薄膜透射光譜和反射光譜，並通過樣品的透射光譜和反射光譜計算了納米- sic薄膜吸收吸收系數和光學帶隙eto實驗結果表明，增大工作氣壓導致納米- sic薄膜的光學帶隙的減小。
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