optical band 中文意思是什麼

optical band 解釋
光波段
  • optical : adj 眼的；視覺的；視力的；幫助視力的；光學（上）的。 optical activity 【物理學】旋光性。 an optic...
  • band : n 1 帶，繩；帶形物；箍；箍條；嵌條；鑲邊；鋸條； 〈pl 〉 （法官等的）寬領帶。2 束縛，羈絆；義務；...
  1. The advantages of simple structure, good linearity, no magnetic saturation, widely measure band make it fit sample in optical - electric current transformer nicely. while, there also have many new problems in applying rogowski coils

    Rogowski線圈不僅具有結構簡單、線性度良好、無磁飽和、測量頻帶寬、動態范圍大等優點，而且體積小、重量輕，非常適合混合式光電電流互感器的取信號采樣繞組用。
  2. Modulation on widening photonic forbidden band of one - dimensional photonic crystal by optical thickness

    光學厚度對一維光子晶體禁帶寬度的調制
  3. Gaas / algaas quantum well photodetectors ( qwips ) are new type devices and progressed rapidly in recent 20 years. qwips utilizing intersubband absorption between gallium arsenide ( gaas ) well and aluminum gallium arsenide ( alxga1 _ xas ) barriers were perfected. therefore, the ability to accurately control the band structure and hence the spectral response, as well as both established technology for growing and processing gaas optical devices and commercially available large area vlsi gaas ic ' s, makes gaas / algaas qwips attractive devices for use in very large focal plane arrays ( fpas ), especially available in the range of long wavelength 8 - 12 urn

    Gaas algaas量子阱紅外探測器（ qwips ）是近二十年來迅速發展起來的一種新型紅外探測器，它成功地利用了gaas勢阱和al _ xga _ （ 1 - x ） as勢壘之間的子帶間吸收，使之具有能帶結構可精確設計從而獲得指定光譜響應的特點，加之成熟的材料生長技術、器件工藝，以及商業上可獲得大面積的vlsigaas集成電路，使得gaas algaasqwips尤其適宜製作8 12 m長波范圍的大面陣探測器。
  4. Lastly, we discuss the energy - band structure of ultracold atoms in optical lattice by means of green function method and in addition, procure the superfluid - mott phase transition condition in mean - field approximation which is in agreement with the result in the literature

    最後利用格林函數方法討論了光格子中超冷原子的能帶結構，根據mott相存在能隙的判據我們在平均場近似下重新得到superfluid - mott相變條件，該結論與相關文獻一致。
  5. The studies on optical properties and irradiation effect of heavy ion implanted samples are very important from both theoretical and applied view points. in this work, the optical properties and defect structures in xe + - implanted ysz and ni + - implanted al2o3 were studied by using optical spectroscopy, tem, xps and trim 96 calculation. it was found that 1 ) a broad absorption band centered at 522 nm was observed in 1 1016 cm - 2 xe + - implanted ysz

    離子注入是一種重要的表面改性技術， ysz （ yttria - stabilizedcubiczirconia ）和- al _ 2o _ 3是兩種性能優良的陶瓷，前者是目前發現的最抗輻照的絕緣體，而後者則是抗輻照最差的絕緣體材料之一，研究重離子注入對其光學性能的影響並以此研究輻照效應，有重要的理論意義和應用價值。
  6. Much emphasis has been put on organic nonlinear optical materials because they have many advantages, such as wide response wave band, good flexibility, high optical damage threshold, low cost, and easy combination and modification

    由於有機非線性光學材料具有寬的響應波段、良好的柔韌性、高的光損傷閾值和較低成本，以及易於合成、可以進行裁減和修飾等特點而備受重視。
  7. Either the boron nitride ( bn ) thin films with different cubic phase content were deposited on n - type si ( 111 ) and fused silica substrates by radio frequency ( rf ) sputtering using two - stage deposition process. the films were characterized by fourier transform infrared ( ftir ) spectroscopy. the transmittance te ( ) and reflectance re ( ) were obtained as a function of incident photo wavelengths and the thickness of films was measured by alpha - step. the absorption coefficient was calculated from te ( ) and re ( ). the optical band gap ( eg ) of the films was determined by effective medium form of formula containing eg

    本文還研究了立方相含量與光學帶隙的關系，在n型si （ 111 ）片和熔融石英片上沉積出不同體積分數的立方氮化硼薄膜，薄膜的成分由傅立葉紅外吸收譜標識；用紫外-可見分光光度計測量了沉積在石英片上的bn薄膜的透射光譜te （ ）和反射光譜re （ ） ，薄膜的厚度用臺階儀測得。
  8. On the basis of uv - vis transmissive spectra, the sputtered films have absorption peaks toward longer wavelength, and the calculation shows the lower optical band gap

    適當的摻雜量可以產生新的吸收峰，增加對長波段光的吸收，提高光催化效率。
  9. By using optical cable communication methods, which have advantages of great information transmission capacity, rapid velocity, wide frequency band, strong anti - jamming capability, low circuitry loss and easy construction, modern sky - wave over - the - horizontal radar can achieve information transmission and system control of full coherent radar, which has excellent abilities of security, stabilization, anti - jamming and anti - destruction

    通過採用光纖傳輸技術，利用其信息傳輸容量大，速度快，頻帶寬，抗干擾能力強，線路損耗低，易於施工等特點，實現全相參雷達的信息傳輸和系統控制，具有優良的保密性，穩定性、抗干擾性和抗摧毀能力。
  10. The convergent infrared optical monitor and controller were designed to monitor and control the film thickness in multilayer growth in fabricating immediate and far infrared band - pass filters

    摘要針對平行光紅外光學系統存在光斑大、能量損失大等不足，設計了主要用於中遠紅外帶通濾光片膜厚監控的會聚光紅外光學系統及其光控系統。
  11. Tin sulfide ( sns ) has an optical band gap of 1. 3ev, which is close to the optimal band gap 1. 5ev

    Sns的光學直接帶隙為1 . 3ev ，接近於太陽能電池材料的最佳禁帶寬度1 . 5ev 。
  12. The ultraviolet absorption edge becomes steep and moves to longer wavelength, and the optical band gap decreases. the optimal quality and ultra - violet absorption property of the zno thin film annealed at 450 are obtained

    中性氣氛中退火薄膜的電阻率基本不變，在真空和還原氣氛中薄膜的導電能力增強，而在氧化氣氛中薄膜的電阻顯著增加了七個數量級，成為絕緣薄膜。
  13. Quantum confinement effect was observed in the films by measurements of absorption spectrum of ge - sio2 films. the widening of optical band gap of the amorphous films seems to be related to the function of the quantum confinement on the impurities or defects in the films

    光吸收特性研究表明，因量子限域效應，對于ge - sio _ 2薄膜觀察到較強的光吸收和光吸收邊隨ge顆粒尺寸變小而藍移的現象。
  14. ( 4 ) the study of the optical band gap of cnx film by uv - vis spectrophotometer. ( 5 ) by using the microhardness tester, we study the hardness of cnx film on the ceremic substrate by dc magnetron reactive sputtering with the feed ar and n2 flow rate, film thickness, substrate temperature and substrate bias

    （ 5 ）用直流磁控反應濺射法，以陶瓷作為襯底，對在ar和n2不同流量、不同膜厚、不同基片溫度和對基片施加不同偏壓下沉積的薄膜，用< wp = 4 >顯微硬度計研究測試了不同工藝參數下的相應硬度。
  15. So, the decrease of optical band gap and the increase of photosensitivity of a - si : h films is the result of the decrease of hydrogen content, especially incorporated as polydride

    因此， a - si ： h光學帶隙的減少以及光敏性的增加是膜中氫含量尤其是以多氫化合物結合的氫含量減少的結果。
  16. It is found that the microstructure and properties of as - deposited dlc films is seriously dependent on the substrate temperature used in deposition processes. with the increase of substrate temperature, sp 3c content in the deposited dlc film decreases, surface roughness and friction coefficient of deposited dlc films increase. at the same time, microhardness, residual stress and optical band gap became lower

    研究發現，基片溫度對dlc薄膜的結構和性能影響最明顯，隨著薄膜沉積過程中基片溫度的增加， dlc薄膜中的sp ~ 3c含量減少， dlc薄膜的表面粗糙度增加， dlc薄膜的顯微硬度降低， dlc薄膜的摩擦系數增大， dlc薄膜的殘余應力都是減小的，光學帶隙eg變窄。
  17. At the same time, we also found optical band gap decreases and photosensitivity of a - si : h films increases with the increase of substrate temperature

    同時，我們也發現伴隨著襯底溫度升高，光學帶隙減少，光敏性增加。
  18. By using the uv - vis spectrophotometer and data processing, we get to know that the carbon nitride films have a wide optical band gap of 4. 14ev, which is 2. 2ev lower than the theoratical band gap of 6. 6 0. 5ev

    通過數據處理，得到了吸收率譜，從而得出光能隙為4 . 14ev 。比理論計算值6 . 4ev 0 . 5小2 . 2ev 。這是因為我們的樣品是由非晶組成的。
  19. Moreover, the optical band gap was widened with the increase of li / zn moral ratio, but it decreased to 3. 37ev when li / zn moral ratio came to 0. 2, and the optical band gap was independent of mg / zn molar ratios

    此外合適量的li ： zflo和（ li ， mg ） ： zflofk膜在可見光區的平均透射率在80以上，而過多的摻入由於帶入了的緣故，使得其透過率下降。
  20. The shimadzu uv - 3101 spectrophotometer was employed to get the uv - visible transmission and reflection spectra. both of the absorption coefficient ( a ) and optical band gap ( eg ) were calculated from the transmission and reflection spectra of the films. it was observed that eg decreased with an increase in the deposition pressure

    採用紫外-可見光分光光度計測定了納米- sic薄膜透射光譜和反射光譜，並通過樣品的透射光譜和反射光譜計算了納米- sic薄膜吸收吸收系數和光學帶隙eto實驗結果表明，增大工作氣壓導致納米- sic薄膜的光學帶隙的減小。
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