optical excited laser 中文意思是什麼
optical excited laser
解釋
光激發激光器-
In the second section, i. e. chapter two, three and four, firstly, the thermal induced third order nonlinear optical characters of three organometallic complexes ( nil2, cul2, pdl2 ) are studied by the z - scan technique, thermaloptical coefficients of the three compounds excited under different laser wavelengths are calculated the results show that the thermaloptical coefficients are dependent on excitation wavelengths, the absorptions under these wavelengths and molecular structures of these compounds
第二部分，即論文的第二、三、四章，首先，我們利用連續激光的457 . 5nm 、 488nm 、 514 . 5nm三個波長z掃描方法研究了nil _ 2 、 cul _ 2 、 pdl _ 2三種新型化合物的熱致三階非線性光學特性，分別計算了三種化合物在各個波長的熱光系數。結果表明，其熱光系數與激發波長、在該波長下的吸收、及化合物結構都有一定關系。 -
Co ( ii ) - porphyrin all exhibit optical limiting effect excited by three different wavelength ar + laser : 457. 9, 514. 5 and 488 nm and saturable absorption especially for 457. 9 nm
實驗表明，對514 . 5nm波長的光，鐵卟啉（ fe （ ） tppcl ）有可能作為好的光限幅材料。 -
Moreover, for co ( ii ) - porphyrin and fe ( iii ) - porphyrin, nonlinear optical absorption and optical limiting properties are studied respectively. results suggest that fe - porphyrin probably become a potential candidate as optical limiting material excited by wavelength 514. 5nm ar + laser
在第四章，研究了鐵卟啉（ fe （ ） tppcl ）和鈷卟啉（ co （ ） tpp ）的非線性吸收和熱自散焦光限幅特性。 -
We got the pl spectrum of zno nanowires using an 806nm fs laser act excited source based nonlinear optical process. the results showed the second harmonic generation ( shg ) phenomenon besides the exciton - exciton collision peak at 388nm, at
實驗中除388nm處的激子-激子碰撞峰之外，還觀測到了二次諧波產生（ shg ）現象，另外在515nm附近觀測到了由氧空位造成的綠光發射峰。 -
When the laser facilities are in operation, the position and direction of all the beams are subject to change due to the optical structural drifts excited by multiple input sources. these changes will influence the precision of the beam propagation and finally the focal spot positions on targets which are strictly dictated by the requirements of plasma physics experiments
這些激光裝置在運行過程中，光學元件結構在外界激勵因素作用下容易產生漂移，使光束位置和方向發生改變，影響光束打靶定位精度，無法滿足精密物理實驗要求。
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