oxide dielectric 中文意思是什麼

oxide dielectric 解釋
氧化物電介質
  • oxide : n. 【化學】氧化物。 antimony oxide 銻白，氧化銻。 deuterium oxide 重水，氧化氘。 mercuric oxide 氧化汞。 nitric oxide 一氧化一氮。
  • dielectric : adj. 非傳導性的，絕緣的，介電的。n. 電介質，電介體，絕緣體。
  1. These problems boost the study of high - k materials as the alternatives of sio2 gate dielectrics. among all high - k gate dielectric materials, hafnium oxide ( hfo2 ) is being extensively investigated as one of the most promising candidate materials due to its superior thermal stability with poly - si, biggish constant and reasonable band alignment. our researches focus on hfo2 dielectrics

    高k柵介質材料已經被廣泛地研究來替代sio _ 2 ，以降低柵泄漏電流和改善可靠性，其中， hfo _ 2由於其較大的介電常數、較大的禁帶寬度、與si的導帶和價帶較大的偏置、以及與si的高的熱力學穩定性等特徵，被認為是最有希望的替代sio _ 2的柵介質材料之一。
  2. Tantalum oxide ( ta2o5 ) attracts more attentions because of its high dielectric constant, stable thermal and chemical properties. it might become the most promising candidate high constant dielectric thin films applied in industries

    氧化鉭薄膜（ ta2o5 ）因為具有高介電常數和良好的熱、化學穩定性，成為最有希望獲得實際應用的介電膜。
  3. Company founder, in a spirit of " seeking technology for innovation and development " enterprise purposes, the production of 95, 99, 75, the series aluminium porcelain pieces, red, zirconium oxide porcelain pieces, a high mechanical strength, good resistance dielectric medium, withstand high temperatures, resistance to wear and tear and other advantages, is widely used in mechanical, chemical, electronics, electrical appliances, textile, and other fields, from the customer ' s trust

    公司創辦以來，本著「求科技，求創新，求發展」的企業宗旨，生產的95 、 99 、 75等系列氧化鋁瓷件，氧化鈦、氧化鋯瓷件，具有機械強度高，抗電介質好，耐高溫、耐磨損等優點，廣泛應用於機械、化工、電子、電器、紡織等領域，深受廣大客戶的信賴。
  4. This dissertation investigates the breakdown theory and reliability characterization methods of the time dependent dielectric breakdown ( tddb ) for the ultra - thin gate oxide, and the hot - carrier effect ( hce ) in deep sub - micron mosfet ' s

    本文對超薄柵氧化層經時擊穿（ tddb ）擊穿機理和可靠性表徵方法以及深亞微米mos器件熱載流子效應（ hce ）進行了系統研究。
  5. Zinc oxide ( zno ) is an important wide - band ( 3. 37ev ) semiconductor with low dielectric constant

    Zno是一種重要的寬禁帶（常溫下為3 . 37ev ）低介電常數的直接帶隙半導體材料。
  6. Preparation of high dielectric constant composite oxide films for aluminum electrolytic capacitors

    鋁電解電容器用高介電常數復合氧化膜的制備
  7. The important results and innovations are as follows : 1. sol - gel technology was used in making composite oxide films which have high dielectric constant

    論文的主要內容及創新性研究歸納如下: 1 、研究了sol - gel技術在制備高介電常數復合氧化膜中的應用。
  8. A comparison of the optical and mechanical performance is made between with iad and without iad. the researched thin films includes monolayer thin films and multilayer thin films. 1. the research of monolayer thin films in the paper, three mololayer thin films - tio2 ta2o5 nb2o5 oxide dielectric thin films are studied

    單層膜的研究研究的單層膜為tio _ 2 、 ta _ 2o _ 5 、 nb _ 2o _ 5等氧化物介質薄膜，對比研究了常規工藝下和離子輔助條件下它們的光學特性和機械特性。
  9. Cathodic electrodeposition technology was used in making composite oxide films which have high dielectric constant. titanium peroxide was prepared by ti ( so4 ) 2 and h2o2, and the optimal ingredient of the solution was obtained through repetitious attempts grounding on the effects of the every composition in the solution of titanium

    以硫酸鈦、過氧化氫、甲醇為原料，通過陰極電沉積在鋁光箔表面沉積一層鈦的過氧化絡合物，然後通過熱處理和陽極氧化等后續工藝，在鋁箔表面得到復合氧化膜。
  10. Since metal - oxide - semiconductor ( mos ) device appeared, integration of integrated circuit ( ic ) expands as moore law. meanwhile the dimension of device scales down, the thickness of sio2 gate dielectric shrinks as the same law. but as the thickness of sio2 gate dielectric reaches at isa, the gate current rises very quickly and reaches at 1 10a / cm2

    自從金屬-氧化物-半導體（ mos ）器件出現以來，集成電路的集成度按照摩爾定律增加，相應地，器件的物理尺寸按照等比縮小的原則不斷縮小， sio _ 2作為柵介質的厚度不斷縮小，特徵尺寸在0 . 1 m以下的集成電路要求sio _ 2柵介質的厚度小於1 . 7nm 。
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