oxygen-transfer surface 中文意思是什麼

oxygen-transfer surface 解釋
氧傳遞表面
  • oxygen : n. 【化學】氧,氧氣。
  • transfer : n 1 移轉,轉送;調職;調任[轉學]證書;變換。2 (財產;權利等的)轉讓,讓與(證書),移轉,授受;...
  • surface : n 1 表面;地面;水面;廣場,空地。2 外觀,外表,皮毛。3 【幾】面;切口;【航空】翼面。adj 表面的...
  1. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面:首次採用硅( 100 )襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子,通過退火處理成功制備了sige - oi新結構,即sige - simox工藝,證實了以45kev注入3 10 ~ ( 17 ) 7cm ~ ( - 2 )劑量的氧離子,隨后在氧化層的保護下經1250 , ar + 5 o _ 2氣氛的高溫退火( 5小時)過程,可以制備出sige - oi新型材料;實驗中觀察到退火過程中的ge損失現象,分析了其原因是ge揮發( ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛)和ge擴散( ge穿過離子注入形成的氧化埋層而進入si襯底中) ,其中ge擴散是主要原因;根據實驗結果及實驗中出現的問題,對下一步工作提出兩個改進的方案:一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路,二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分,從而部分解決sige
  2. In this paper, using surface photovoltage spectroscopy ( sps ) and field induced surface photovoltage spectroscopy ( fisps ) as a dominated tool, we investigated the surface and interfacial electron structure, charge transfer character of two nanostructured composite system and the effect about atmosphere ( water and oxygen ) on the semiconductor nanoparticles

    本論文利用表面光電壓譜( sps )和場誘導表面光電壓譜( fisps )為主要研究手段對兩類納米復合材料的表面和界面電子結構和電荷轉移特性以及空氣中水、氧物種等氣體分子對納米材料表面光伏性質的影響進行了探索性的研究。
  3. The first successful electrochemical biosensor is the amperometric glucose biosensor using the clark - type oxygen electrode with direct electron transfer from the glucose oxidase to the surface of the electrode

    電流型酶傳感器是生物傳感器領域中研究最多的一種類型,其電極反應包括酶化學反應和異相電子轉移反應。
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