p band 中文意思是什麼

p band 解釋
p波段
  • p :
  • band : n 1 帶，繩；帶形物；箍；箍條；嵌條；鑲邊；鋸條； 〈pl 〉 （法官等的）寬領帶。2 束縛，羈絆；義務；...
  1. The highest vt and p valt in true leaf were accompanied two hybridizable polypeptides of aox protein, 35kd and 38kd respectively. the next was cotyledon vt and p valt with only one 38kd hybridizable polypeptide of aox protein. hypocotyl vt and p valt were the lowest and its immunobloting band was similar to that of cotyledon, but the expressive amount of 38kd protein was less than that of cotyledon

    綠豆幼苗不同器官的有關呼吸參數測定結果與aox表達的western分析基本一致：真葉的v _ t特別是v _ （ alt ）最高，它也具有35kd和38kd的aox的雜交多肽；其次是子葉的v _ t和v _ （ alt ） ，且在子葉中，只見一條分子量為38kd的aox多肽；下胚軸的v _ t和v _ （ alt ）都最低， western雜交顯示也只有一條分子量為38kd的多肽，而且表達量也較少。
  2. The photocatalytic activities of the xw11 / tio2 ( x = p, si, ge ) composite films were tested via degradation of aqueous azo - dyes, congo red ( cr ) and naphthol blue black ( nbb ). it was observed that the photocatalytic activities of the three composite films are much higher than that of the pure tio2 film, mainly attributed to the synergetic effect between xw11 and tio2, i. e., xw11 - catalyzed electron transfer from the conduction band ( cb ) of photoexicited tio2 to itself

    結果表明三種復合膜均具有遠高於純tio _ 2膜的活性，主要歸因於復合膜材料中多金屬氧酸鹽和tio _ 2之間存在的協同效應，即作為強電子受體的多金屬氧酸鹽接受tio _ 2受光激發形成的導帶光生電子，延長了空穴-電子的再復合時間，同時自身仍具有光活性。
  3. Varshni, y. p. " band - to - band radiative recombination in groups iv, vi, and iii - v semiconductors ( i ). " phys. stat. sol. 19 ( 1967 ) : 459 - 514

    一篇完整描述在半導體中光學再結合過程的論文，主要強調放射性再結合。
  4. This work was supported by the state science and technology ministry of p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. gallium nitride is one of the 3rd generation semiconductor materials. from 1990 ' s, gan has attracted more and more attention and advanced rapidly, mainly due to its direct transition, wide band gap ( ~ 3. 4ev ) and other excellent characters

    Gan是直接躍遷的寬帶隙材料，具有禁帶寬度大（ 3 . 4ev ，遠大於si的1 . 12ev ，也大於sic的3 . 0ev ） ，電子漂移飽和速度高，介電常數小，導熱性能好等特點，在光電子器件和電子器件領域有著廣泛的應用前景。
  5. P - n, n - dimethlaminobenzates ( ( ch3 ) 2nc6h4coor ) have typical ict characteristics. the ct emission and the fluorescence intensity ratio of ct band to normal band ( ict / ile ) were different in organic solvent and in the aqueous solvent with ctab micelle when the length of r group was increasing

    N ， n -二氨基苯甲酸酯系列具有典型的雙熒光，從甲酯到辛酯隨著酯烷基鏈的增長，它們在有機溶劑和膠束水溶液中的熒光峰位置以及雙重熒光強度之間的比值不同。
  6. By detecting < wp = 6 > the pl spectra under low temperature, a thermal activation process could be seen. and the possible mechanism of p band formation is discussed

    通過測量zno微米柱在不同溫度下的發光光譜，發現激子-激子相互碰撞產生的熱激活過程，並討論了激子激子相互作用的機理。
  7. If this paper also studies the band percolation of the models of the triangle lattice and the hexagonal lattice when p = pc and p > pc. such as the estimation of power of, x and xf and their upper and lower bound

    本文還研究了正三角形和正六邊形滲流在臨界點處（ p pc ）和上臨界狀態（屍屍的滲流。特別考慮關於0 ， x和冪指數的估計，並且給出了估計的上下界。
  8. Mainly involving the vibration of the o - p - o linkages and c - o groups in ribosome, are closer and lower in aml samples than the corresponding ratios in cml samples. the amide band in aml is broader than that in cml. these differences indicate the different contributions of red cells in erythrocytic series in the erythropoietic development from proerythroblast to matured erythrocytes, and the results imply the maturation of red cells in bone marrow are related to the proliferation of leukemic cells. the noticeable differences may have important implications for analyzing and evaluating leukemia

    該結果提示aml和cml骨髓血紅細胞系中有核紅細胞的數量分佈不同，同時提示骨髓紅細胞的成熟可能與白血病細胞的增殖有關。骨髓血細胞的紅外光譜的差異性對白血病的分析和評價具有重要的意義。
  9. For the first time, the energy band configuration of p - si / n - bn heterojunctions were studied and drawn up. the study of the current - voltage ( i - v ) characteristics showed significant rectifying behavior with reverse saturation current of 3. 7 x 10 ~ 7a, breakdown voltage of 30v and turn on voltage of 14v. the capacity - voltage ( c - v ) characteristics are studied too

    研究了p - si / n - bn異質結的-特性，測試表明異質結具有明顯的整流特性，反向飽和電流3 . 7x10 「 』 a ，擊穿電壓高達30v導通電壓為14v ，應用p七en異質結能帶圖對其卜v特性做出了定性解釋。
  10. In the photoluminescence ( pl ) spectra, a new emission band due to the exciton - exciton collision process ( p band ) is observed under low excitation intensity at room temperature. and some fine structures origination from the cavity modes of the fabry - p rot etalon could also be seen clearly

    在單根zno微柱（直徑有25 m ）的p帶發光峰上還可以觀察到明顯的f - p腔模式分佈，通過計算得到其腔長為21 m ，同微米柱的尺寸相當。
  11. People s reactions to boy band music range from amazement and awe to disgust and hatred, but it is an undeniable aspect of p.

    但在流行文化的領域里，你不得不承認它的重要性：在滿足少女的夢. .
  12. This work was supported by the state science and technology ministry of the p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. recently, gallium nitride ( gan ) as a wide band gap semiconductor has attracted more and more attention and advanced rapidly, mainly due to its promising applications in short - wave light - emitting devices, photodetectors, as well as anti - radiation, high frequency and high power electronic devices

    本碩士論文是基於國家科技部重點基礎研究發展規劃項目（ 973項目）子課題「硅基寬帶隙異質結構材料生長及器件研究」 （ 2000年10月- 2005年9月， no . g20000683 - 06 ）和國家自然科學基金（ no . 60046001 ）的一部分研究工作。
  13. In the high frequency c - v experiments, the large flat - band shift in sio2 / p - sic indicated that there was high density of deep interface states. the deep interface states were simply studied by using photo excitation

    在無光照條件下，比較了n型和p型sicmos的不同特點，對其深耗盡特徵和p型sicmos的平帶電壓作了討論和解釋。
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