p-n junction中文意思是什麼

p-n junction 的中文意思

p-n junction 例句

1. O n accou n t of the low q - factor a n d small tu n i n g ra n ge of the p - n junction varactor, the i n versio n - mode mos varactor is used i n the lc voltage co n trolled oscillator i n this thesis. the simulatio n results show that the desig n ed lc voltage co n trolled oscillator has 15 % tu n i n g ra n ge
   3 .由於lc壓控振蕩器中的pn結變容管品質因數低、調諧范圍小，本次設計的lc壓控振蕩器採用了強反型mos變容管，模擬結果表明，所設計的lc壓控振蕩器具有15 %調諧范圍。
2. I n the p a p er we mai n ly researched s p ace gai n p 2 / gaas / ge high efficie n cy ta n dem cells " maki n g p rocess by home - made low p ressure mocvd tech n ology a n d n ew solar co n ce n trators. firstly, we p rese n ted reseached a n d develo p me n t of solar cells i n chi n a a n d foreig n cou n tries ; seco n dly, o n the basis of fu n dame n tal p rici p les a n d theories, we discussed some factors of i n fluci n g co n versio n efficie n cy of solar cells, a n d a n alysed the i - v out p ut feature of two - junction ta n dem cells ; the n the desig n co n ce p t of gai n p 2 / gaas / ge two - junction ta n dem cells was discussed, the detailed as p ects of gai n p 2 / gaas / ge ta n dem cells e p itaxy growth by low p ressure mocvd was studied, a n d some questio n s o n e p itaxy growth ( such as crystal qualities, i n terface stress, eleme n t i n terdiffusio n , n - a n d p - ty p e do p i n g et all ) were solved ; after that, the cell fabricatio n p rocess was described ; fi n ally, we reseached the hot p ressi n g a n d mould p rocess tech n ology of a n arched li n e - focus fres n el le n s made by p mma, desig n ed a n d fixed n ew solar co n ce n trators
   本文致力於用自製的低壓mocvd裝置進行cainp _ 2 / gaas / ge空間用高效級聯太陽能電池製作的工藝以及聚光太陽能電池組件的研究。首先，介紹了國內外太陽能電池的研究現狀及應用情況；其次，運用太陽能電池基本原理討論影響電池轉換效率的因素，分析了級聯電池的伏安特性；隨后，討論了cainp _ 2 / gaas / ge雙結級聯電池的結構設計理念，研究了採用低壓mocvd技術生長cainp _ 2 / gaas / ge級聯太陽電池材料的工藝過程，解決了異質材料生長的結晶質量、界面應力、材料互擴散以及材料n 、 p型摻雜等一系列問題；然後總結了級聯電池的后工藝製作；最後，研究了以pmma為材料的菲涅耳線聚焦透鏡的熱壓成型工藝及其模具的加工工藝，設計並安裝完成新型聚光太陽能電池組件。
3. The se n sor o p eratio n s p eed ca n be 64ms / frame ~ 2ms / frame. i n the research of p hotoelectric cell, device p hysics structure of p ixels have bee n o p timized. dee p junction de p th p hotodiodes, such as p + / n - well / p - sub structure, have bee n used a n d the p hoto - res p o n se of the se n sor has bee n greatly e n ha n ced
   復位信號為sv時的單幀感光動態范圍為60db ，採用改變復位信號頻率的二次掃描方式可將傳感器的總的感光動態范圍擴大到84db ，可對0石10 ， 000lx光照強度的信號進行傳感。
4. At the i n itial stage of p la n ar tech n ique, b was em p loyed as ideal diffusio n im p urity i n base - regio n of n p n si p la n ar devices because of the match of its solid - solubility a n d diffusio n coefficie n t i n si with those of p i n emissio n - regio n , a n d the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) a n d the small diffusio n coefficie n t, the li n ear slowly - cha n ged distributio n of acce p tor b i n p n junction ca n n ot be formed, which could n ot cater to the requireme n t of high - reversal - voltage devics. thereafter b - a1 p aste - layer diffusio n tech n ology a n d close - tube ga - diffusio n tech n ology had bee n develo p ed, while the former ca n lead to relatively large the base - regio n deviatio n a n d abru p tly varied regio n i n si, which caused severe dece n tralizatio n of curre n t am p lificatio n p arameter, bad thermal stability a n d high tr ; the latter n eeded the relatively difficult p ack tech n ique, with p oor re p eatability, high rejectio n ratio, a n d p oor diffusio n quality a n d p roductio n efficie n cy
   在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。
5. P - n junction edge effect p - n
   結邊際效應
6. P - n junction p hotodiode p n
   結電二極體
7. P - n junction electrolumi n esce n ce p n
   結電致發生
8. O n the base of the study o n sige material p hysics characteristic, sige / si hetero - junction characteristic, we dissertate the adva n tage of sige / si hetero - junction p ower diodes a n d establish more accurately p hysical models a n d p ro p ose two n ovel ki n ds of fast a n d soft recovery p + ( sige ) - n - - n + hetero - junction p ower diodes : the o n e is p + ( sige ) - n " - n + diode with the multi p layer gradual cha n gi n g do p i n g co n ce n tratio n i n the n - regio n , a n d the other is p + ( sige ) - n " - n + diode with ideal ohmic co n tact o n the cathode i n terface
   本文針對sige材料的物理特性、 sige si異質結特性建立了準確的物理參數模型。在詳細論述了sige si異質結功率二極體良好特性的基礎上，提出了兩種快速軟恢復sige si功率二極體新結構： n ~ -區採用多層漸變摻雜和陰極側採用理想歐姆接觸。
9. The research a n d a p p licatio n of the diamo n d films were reviewed i n this p a p er, a n d the n ucleatio n s o n differe n t substrates i n hfcvd ( i lot filame n t chemical va p or de p ositio n ) system were i n troduced. the im p roveme n t of the diamo n d n ucleatio n o n si, n i, cu was i n vestigated, i n order to de p osit diamo n d of high de n sity. the p - n junction betwee n b - im p la n ted diamo n d films a n d n - ty p e si substrate was i n vestigated
   本論文簡要敘述了金剛石薄膜的研製進展和應用，介紹了用化學氣相沉積法（ hotfilamentchemicalvapordeposition ）在不同的襯底上的金剛石薄膜的制備方法和形核，並對si 、 ni 、 cu三種不同的襯底的金剛石膜研究了如何增大形核密度、提高形核質量。
10. The o n e dime n sio n al co n ti n uity equatio n s of n - o n - p p la n ar p n junction are solved at differe n t bou n dary co n ditio n s. ge n eralized solutio n s of p hotocarrier co n ce n tratio n are give n i n this p a p er
    摘要對一維情況下平面pn結的連續性方程進行了求解，給出了不同邊界條件下光生載流子濃度的一般形式解，並對結果進行了分析討論。
11. Com p ari n g with p - n junction , sbd is a majority carrier device. it has low break - over voltage, a n d ca n be used at high freque n cy
    與p - n結相比，它是一種多子器件，具有正向導通電壓低，使用頻率高等特點。
12. Ge n erally the mi n ority carriers accumulated by the cell are ge n erated either directly from the p - n junction or the dista n ce betwee n the ge n erated mi n ority carriers a n d the junction is less tha n the diffusio n le n gth of the mi n ority carriers
    通常的太陽電池收集的少數載流子要麼是產生於p - n結，要麼是少數載流子距離結的距離必須小於其擴散長度。
13. Study o n n ew p - n junction termi n atio n tech n ique
    結終端技術的研究
14. P - n junction semi - co n ductor laser p n
    結半道體激光器
15. P olycrystalli n e diamo n d films were de p osited o n n - ty p e si substrates. i n order to achieve a better distributio n of the im p la n ted eleme n t, boro n io n s were im p la n ted by two ste p s. the i - v curves were studied, the p - n junction effect is very evide n t
    在n型引襯底上沉積一層連續的金剛石膜，通過二次離子注入的方法使b離子比較均勻的分佈在金剛石膜中，通過測量i - v曲線，可以明顯的看出p - n結效應的存在。
16. Tem microgra p hies show that tioj n a n o p articles are p artly coated with the p olymer. we alse study effect of p a n i film. fi n ally a n ew orga n ic p olymer stk junction i s p roduced by usi n g p - ty p e p olya n ili n e a n d n - ty p e semico n ductor
    最後，直接利用csa - pani濾液在導電玻璃上成膜做成器件，並對器件的性能進行了分析，這對于聚苯胺在在光電器件中應用具有指導意義。
17. These im p roveme n ts are achieved without resorti n g lifetime killi n g a n d thus the devices ca n be easily i n tegrated i n to p ower ics. this p a p er is good for desig n a n d ma n ufacture of p + ( sige ) - n " - n + hetero - junction p ower diodes
    取得的成果對于p + （ sige ）一n一n +異質結功率二極體的設計和研製工作均具有一定的參考價值。

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