peak shift 中文意思是什麼
peak shift
解釋
峰漂移-
Presence of vulcan xc - 72 active carbon powder in the pt / moox / gc composite electrode by electrochemical codeposition made peak potential of methanol oxidation a further negative shift of about 50mv and a further promotion of co - tolerant performance for methanol oxidation
催化劑中vulcanxc - 72活性碳粉的引入即共沉積制備的pt moo _ x c gc電極催化劑甲醇氧化峰電位又進一步負移50mv左右，抗co中毒催化性能又進一步提高。 -
The absorption characteristics was that the surface plasma absorption peak appeared around 570 nm shifted to a short wavelength and strengthened as the cu composition increased. but the maximal shift range of the absorption - edge preponderated over 500 nm, and leaded that the dipolar plasma resonance absorption peak were covered up and gradually disappeared in the absorption spectrum. we theoretically explained the mechanism of the modulating action
實驗觀察到cu表面等離子體共振吸收峰位在570lun附近的吸收邊頻移量超過了500nln .理論分析表明，吸收峰位的移動主要源於偶極共振，而峰形的寬化主要由納米粒子的表面效應和量子尺寸效應引起 -
Red shift of pl spectra peak was observed, and pl lifetime would rise at the same time
發現加入ingaas及alas緩沖層后使inas量子點發光峰強度增大，譜峰紅移，發光壽命增大。 -
The experimental results showed that the characteristic pl peak of quantum wells was shifted to longer wavelength ( red shift ) and the intensity was decreased much after fel irradiation
分析光致發光譜，發現量子阱特徵峰經過輻照后峰值發生紅移，波形展寬，峰高降低。 -
When x is above 1. 3 %, the emission spectra are strongly broadened and do not show any well - defined features, and their peak positions shift to lower energies correspondingly with increasing x. the large band - gap bowing of gap1 - xnx alloy is induced by the impurity band formation due to the intercenter interaction
對中心發光的nn3束縛激子的零聲子線及其聲子伴線，並得到了nn3的所有聲子伴線（ l0 、 la 、 ta ）的s因子在約20k卜50k范圍內與溫度的關系。 -
In the third chapter, the influence of current density, solution concentration, erosion time and aging in ambient air on the pl spectra of ps suggests that peak would blue shift with current density increasing, and with erosion time and aging time prolonging ; with the increasing of solution concentration, peaks would red shift when solution concentration less than 1 : 1 but blue shift when solution concentration greater than 1 : 1. above phenomena can be explained by quantum confinement and light center model, but do not deny the action of si - h bonding and defect on the surface in the process of photoluminescence. at present, radiation mechanism is still one of the primary problems in the study of ps
在第z三章中；通過對比，分析了電流密度、陽極化時間、溶液濃度以及自i然氧化時間對多孔硅光致發光光譜的影響，認為在一定的范圍內，多i孔硅的發光峰位會隨電流密度的增大而藍移，要獲得較強的發光，需z要選擇合適的電流密度；隨著腐蝕時間的延長，多孔硅的發光峰位會i發生藍移；當f酸的濃度較小q ： 1 ）時，峰位隨濃度的增大表現為向i低能移動；而當f酸的濃度較大河山時，峰位隨濃度的增大則表現z為移向高能；多孔硅在空氣中自然氧化；其發光峰位發生藍移，而強i度隨放置時間的延長而降低。 -
Under visible light excitation titanic acid and titanate sodium nanotubes showed a relatively intense emission, which red shifts with the increase of excitation wavelength. under humid conditions this photoluminescence of titanic acid nanotubes was not stable. the intensity decreased, and the emission peak was at 480nm, which cannot shift with the change of excitation wavelength
鈦酸和鈦酸鈉納米管在使用可見光激發時，都能產生光致發光現象，當使用不同波長的可見光激發鈦酸和鈦酸鈉納米管時，能夠得到不同強度的發光譜帶，且發光峰的位置隨著激發光的變化發生較大范圍的移動。 -
The study indicates that self - assembly monolayer membrane of au nanoparticle distributes as sub - monolayer. after au nanoparticles are assembled in multilayer, surface plasma resonance absorption peak got a red shift because of the polarizing effect of the surrounding media and the coupling effect of surface plasma waves between the next au nanoparticles
研究表明au納米粒子的自組裝單層薄膜呈亞單層分佈， au納米粒子組裝到多層復合薄膜中后，由於周圍介質的極化作用以及相鄰au納米粒子間的表面等離子體波的耦合作用，表面等離子共振吸收峰出現紅移和展寬。 -
In this paper, through modeling and analyzing the non - continuities in the rf structures of twt, scattering parameter s11 is derived to represent the peak - peak values of the ripples of gain and phase - shift in traveling wave tubes, providing with some instructions for the controlling of the uniformity of gain and phase - shift in twts
本文通過對具有高頻不連續性的行波管進行建模分析，用表徵不連續性的反射系數的幅度給出了行波管增益和相移峰峰值的量級，對控制相位一致性行波管的不連續性提供了依據。 -
The conclusions are as listed below : compared with absorption of fc16ab in chloroformon, the absorption peak of fcifrab in lb films shifted toward the shorter wavelength region, suggesting that some interaction among molecules due to the close molecular packing such as h - aggregates in the lb films. comparing uv - vis spectra of fc16ab in lb films deposited from cl - subphase with from aqueous subphase, this blue shift phenomenon of absorption demonstrated cl - made the compactness of fc16ab lb films increasing. ft - ir spectra of fc16ab in lb films at different temperature showed that there is a gradual disordering of alkyl chain from 27 ? to 200 ?, but no district phase transition appeared
結論如下：紫外-可見光吸收光譜說明：與fc _ （ 16 ） ab氯仿溶液相比， lb膜的吸收光譜發生了藍移，這歸結于fc _ （ 16 ） ab發生了h -聚集以及抗衡離子可以使fc _ （ 16 ） ab的lb膜排列更緊密；變溫紅外光譜說明，隨著溫度升高， fc _ （ 16 ） ab的lb膜中烷基鏈的有序排布程度減弱，這表明該lb膜熱穩定性減弱，但在減弱的過程中沒有出安徽人學申請碩士學位論文摘要現相轉變。 -
The products are primarily used in 1. f. t, therefore appropriate t. c types shall be used to match ferromagnetic cores. if not, peak frequency will shift
一、本品主要用於中周配套，因此選用電容器之t . c （溫度補償）類別應與瓷芯相匹配，如不匹配，易造成高低溫諧振飄移。 -
Further study showed that quanta size effect is the reason of ultraviolet absorption and blue shift of absorption peak
分析認為納米氧化鋅的量子尺寸效應既是其吸收紫外線的主要原因，也是其紫外吸收峰藍移的主要原因。 -
Using the variational method, analytical conditions for stationary pulse propagation in dense period fibers with strong dispersion management are deduced. the expression of initial soliton peak power is given. by employing the obtained formulas, the soliton evolution semi - analytically in various dispersion maps can be investigated. effects of the third order dispersion are also studied in this paper. the results show that imperfect dispersion slope compensation can cause pulse central position shift and even serious degradation of soliton shape
利用變分方法，推導出了在強色散管理的密集周期光纖中脈沖穩態傳輸的解析條件，並給出了初始脈沖峰值功率的表達式.運用這些公式，對各種色散管理系統中孤子的演化進行了半解析的考察.三階色散也被考慮在內.結果表明:不完善的色散斜率補償將導致脈沖中心位置的偏移甚至嚴重的孤子形狀劣化 -
Compared with the composite of porous silicon and dbo - ppv, the peak of pl of porous silicon showed a blue shift
多孔硅與dbo ppv復合后，使多孔硅的一個發光峰發生藍移。 -
Similar to hntx - iv, 100 nmol / l hntx - v did n ' t effect the active and inactive kinetics of currents and did n ' t have the effect on the active threshold of sodium channels and the voltage of peak inward currents. however, 100 nmol / l hntx - v caused a 7. 7 mv hyperpolarizing shift in the voltage midpoint of steady - state sodium channel inactivation
1 / liintx一v也不影響ttx一s鈉電流的激活相和失活相，對鈉通道的激活閩值和最大激活電壓也無明顯改變，但能引起鈉通道的半穩態失活電壓有7 -
The rebate programmes under the dsm agreement provide financial incentives to encourage the non - residential users to install more energy efficient equipment and devices to shift part of the electricity demand to non - peak hours
協議的回扣計劃提供了經濟誘因，鼓勵非住宅用戶安裝更節能的設備，以及把部分電力需求量轉移至非繁忙時間。 -
Compared with pl of pure nanotube, the emission peak energy shift value was larger. this may result from the formation of oxygen vacancies in the nanotube during the process of surface - modification
（ 2 ）使用十六醇對納米管鈦酸進行了化學修飾，結果表明納米管表面與十六醇發生酯化反應。 -
The sem and the pl observation showed that the surface of porous silicon prepared by pulsed etching was more uniform and the si particles were smaller. the intensity of pl formed by pulsed etching method was enhanced and the peak had blue shift comparing that formed by dc electrochemical etching method. at the same time, it was observed that the smaller the dimension of the porous silicon, the broader energy gap of the porous silicon
採用脈沖和直流電化學腐蝕兩種方法制備多孔硅，對這兩種方法制備的多孔硅樣品進行掃描電鏡和熒光光譜的測量，發現脈沖腐蝕制備的多孔硅樣品比直流腐蝕制備的多孔硅樣品表面均勻、顆粒尺寸小、發光強度大，而且發光峰位有明顯的藍移現象。 -
As a result 4 the rising annealing temperature induces si02 phase to form, also ivolves the formation of a si phase. in high - temperature - annealed sio ~, films the excess silicon atoms are present as si - si4 tetrahedra, randomly dispersed in the amorphous si02 matrix. photoluminescent spectra were observed for the samples excided by the laser whose wavelength is 365nm. the pl peak is located at about 445nm, which dose n ' t shift as the annealing temperature changes. as the annealing temperature is raised, the luminescent intensity increases. the phenomena suggest that the si - o - si bond as a defect center which is broken down by the stress at the si nc / si02 interface is the primary source of blue luminescence
這個陡的界面由於明顯的晶格結構的差別而有較大的應力。界面的形成伴隨著界面發光中心的增加，同時pl強度在l戶800有一個大的增強。這個結果提示我們，界面上h 0 s工鍵斷裂形成的nbohc應是藍光發射的主要原因。 -
Those samples treated show a major peak at 2. 02ev and a minor one at 2. 13ev at a given low temperature and experiences a blue - peak - shift at room temperature. a defect model is abstract suggested to account for the pl of sintered psc
經氧化研磨或研磨的樣品在低溫下有較高的發光強度，發光主峰位於2 . 02ev ，在2 . 13ev有一弱峰，室溫下發光峰發生藍移。
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