photoionization cross-section 中文意思是什麼
photoionization cross-section
解釋
光致電離截面- photoionization : n. 光致游離(作用)。
- cross : n 1 十字架;〈the C 〉 耶穌受刑的十字架。2 〈the C 〉 基督教(教義,國家)。3 不幸,苦難;挫折,...
- section : n 1 (外科、解剖的)切斷;切割;切開。2 【外科】切片,【金相】磨石。3 (果子的)瓣。4 【數學】截...
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Furthermore, we use the wave function and binding energy obtained from above to calculate the photoionization cross - section of the impurity
然後在此基礎上,我們採用所選的波函數和得到的束縛能進一步計算了類氫雜質體系的光致電高截面 -
The shapes of the photoionization cross - section varying with the photon energy in the two cases are different. we have compared the results with that of previous work
對于每一種情況都與前人的結果做了比較,同時還與無限深勢壘的情況做了比較 -
In the second part, using the wave function and binding energy obtained from the first part, the photoionization cross - section of the impurity is calculated
在第二部分,我們採用第一部分所選的變分波函數和得到的束縛能進一步計算了類氫雜質體系的光致電離截面。 -
Finally, a specific analysis is made for our results. because we have considered the correlation between the confined and non - confined direction of the wire, the binding energy is improved and correspondingly the threshold energy is enhanced, which results in the declinement of the photoionization cross - section
最後對所得結果進行了詳細的討論,山於我們選取的波函數考慮到限制方向與非限制方向的相關性因素,從而提高了雜質的束縛能(在寬階時尤為明顯x即提高了所謂的閾能( e ,導致了光電離截面值的減小 -
In the calculation of the photoionization cross - section, we find that with the changing of the photon energy, the variation scope of the photoionization cross - section of the envelop function in the previous references is much smaller than that in this paper
在計算光電離截面時,我們發現:隨光子能量的變化,前人選取的包絡函數計算得到的光電離截面的變化范圍比我們的結果小很多。 -
According to the dipole transition selection rule, it allows the system to transit from the ground state to the first and second sub - band respectively, the shape of the photoionization cross - section varying with the photon energy in the two cases is quite different
根據偶極躍遷的選擇定則,將使得體系從基態分別躍遷到電子的第一子帶和第二子帶,二者的光電離截面隨光子能量的變化截然不同。 -
In this paper, based on the previous works, we study the quality of a hydrogenic impurity in gaas / gai - xalxas rectangular quantum wires in detail. using variational approach, we calculate the binding energy and the photoionization cross - section of the impurity in the system
本文在前人工作的基礎上,詳細研究了矩形截面gaas ga _ ( 1 - x ) al _ xas ( x = 0 . 3 )量子阱線中的類氫雜質體系的性質,採用變分技術計算了此體系的束縛能及其光致電離截面。 -
In this paper, based on the previous works, we studied the properties of a hydrogenic impurity in the gaas / ga1 - xalxas rectangular single quantum wire in detail. using variational approach, the binding energy and the photoionization cross section of the impurity in the system are calculated
本文在前人工作的基礎上,研究了方形截面gaas / ga _ ( 1 - x ) al _ xas量子線中類氫雜質體系的性質,採用變分技術計算了此體系的束縛能及其光致電離截面。 -
This dissertation concentrates on photoionizaiton of mnl and mnll including resonance structure in the framework of many - body perturbation theory ( mbpt ). more accurate results were obtained by using the new approach to calculate resonance structure and photoionization cross section
首先針對錳原子或離子不同殼層的光電離結構進行特定的理論分析,然後通過合理的選擇勢能及共振結構的計算方法,並考慮高階關聯,得到了一系列新的更為精確的光電離截面及共振結構。
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