photoresist 中文意思是什麼

photoresist 解釋
n. 名詞 【物理學】光致抗蝕劑。

  1. Electronic grade : lithium battery, remover of photoresist, epoxy resin rubber trimmings cutting, solid elastomer degrease, coat developing agent

    作為有機合成原料：聚乙烯基吡咯烷酮，聚酰胺纖維，腦復康等。
  2. With the third harmonic 355nm nd : yag laser as the exposal source, the lithography of su - 8 photoresist is studied

    本文採用波長為355nm的三倍頻nd : yag激光作為曝光光源，對su - 8光刻膠進行光刻研究。
  3. The laser - liga technology provided by this research is the first technology to use ultraviolet laser as the exposal source for su - 8 photoresist lithography. it is a technology with lower cost and big potential to increase the aspect ratio as well as wider application

    本文首次提出採用紫外激光作為曝光光源的laser - liga技術，對su - 8膠進行曝光光刻不僅成本低、易推廣，而且具有大幅度提高光刻深寬比的潛力。
  4. Specification for photoresist e - beam resist for hard surface photoplates

    硬面感光板中光致抗蝕劑和電子束抗蝕劑規范
  5. A beam of light ( typically ultraviolet light from a mercury arc lamp ) shines through the chromium mask, then passes through a lens that focuses the image onto a photosensitive coating of organic polymer ( called the photoresist ) on the surface of a silicon wafer

    一束光（通常是汞弧燈發出的紫外光）先穿透鉻光罩，然後通過透鏡把影像聚焦在晶圓表面的有機高分子感光塗料（稱為光阻劑） 。
  6. Fabrication technology of microlens array by melting photoresist

    微透鏡陣列的光刻膠熱熔製作技術
  7. The properties of a new photoacid generator for 193 nm photoresist

    光致抗蝕劑用光產酸劑的性質分析
  8. Preparation of photoresist for analysis of inorganic contaminants

    無機污染物分析用光致抗蝕劑的制備
  9. Adjusting photoresist exposure time

    調整光電阻曝光時間
  10. Accelerated aging of photoresist

    光致抗蝕劑的加速老化
  11. Calculating the contrast and threshold sensitivity of a positive photoresist

    計算正性光致抗蝕劑的對比度和閾限靈敏度
  12. Determining pinhole density in photoresist films used in microelectronic device processing

    微電子器件加工過程用的光刻膜中針孔密度的測定
  13. Determining effective adhesion of photoresist to hard - surface photomask blanks and semiconductor wafers during etching

    測定在蝕刻期間光致抗蝕劑同硬表面光掩膜坯及半導體片的有效粘附性
  14. Photoresist technology is the important constitute of exposure technology, high performance resolution can be attained by using high performance exposure tools with matched high performance photoresist

    摘要光刻膠技術是曝光技術中重要的組成部分，高性能的曝光工具需要有與之相配套的高性能的光刻膠才能真正獲得高解析度的加工能力。
  15. The paper mainly found on the application of photoresist in the process of ic fabrication to summarize the facets of reaction mechanism, performance index parameters and finally to indicate some new development directions in terms with process evolution target

    主要圍繞光刻膠在積體電路製造中的應用，對其反應機理及應用性能指標進行闡述，重點從工藝的角度去提出新的研究方向。
  16. Intensity distribution in photoresist is analyzed during ldw exposure process in terms of the improved theoretical model and the method of selecting the optimal exposure is described. results of ray - tracing using zemax that is optical design software agree well with the calculated results of theoretical model and l dw experimental results verify the accuracy of the model. therefore this improved model is important significant for directing ldw research

    本文完善了激光直寫光刻理論，分析了直寫曝光中膠層內光場的分佈，探討了最佳曝光量的選擇方案，利用zemax軟體進行光線追跡的結果和理論模擬十分相近，實驗結果驗證了理論模型的正確性，該理論模型對激光直寫光刻技術研究具有重要指導意義。
  17. The differences of the monochromaticity and the direction of ultraviolet laser and non - laser ultraviolet source are analyzed firstly. the advantage of ultraviolet laser in exposing su - 8 photoresist is discussed

    首先分析了激光紫外光源與普通紫外光源在單色性與方向性上的差異，論證了採用激光紫外光源曝光su - 8光刻膠的優勢。
  18. The most prevalent procedure is to use photolithography or electron - beam lithography to produce a pattern in a layer of photoresist on the surface of a silicon wafer

    最常用的步驟是用光蝕刻或電子束蝕刻法，在矽晶圓表面的光阻層上製作出圖案。
  19. It has broad application prospect in the following fields such as microelectronics, photoelectronic devices, large screen flat panel display, field emitter array, acoustic surface wave device, photon crystal, light waveguide array, holographic honeycomb lens and micro - optical element array, micro - structure manufacture, fabrication of large area grating and grid of high resolution, photoresist performance testing, profile measurement and metrology, etc. the paper only involves the primary research of interferometric lithography

    在微電子、光電子器件、大屏幕平板顯示器、場發射器陣列、表面聲波器件、光子晶體、光波導陣列、全息透鏡和微光學元件陣列、微結構製造，高分辨、大面積光柵和網格製造，在抗蝕劑性能測試、面形測量和計量等領域，干涉光刻技術都具有廣闊的應用前景。
  20. A fast computer simulation of diffraction intensity on the photoresist surface was performed based on kirchhoff ' s diffraction theory and the incoherent super - impose of multi - point source diffraction intensity

    利用基爾霍夫衍射理論及多點光源的衍射光場非相干疊加方法，對光刻膠表面的衍射光場進行了快速計算機模擬，並與霍普金斯理論計算結果進行了分析比較。
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