planar device 中文意思是什麼

planar device 解釋
平面型元件
  • planar : adj. 1. 平面的;在平面上的;平的。2. 【數學】二維的,二度的。
  • device : n. 1. 設計,計劃;方法,手段。2. 〈pl. 〉意志,慾望。3. 謀略,策略,詭計。4. 器具,器械,設備,裝置。5. 圖案,圖樣;花樣;紋章;標記,商標;(紋章上的)題銘。
  1. Moreover, the thermal storage device model is built up in order to understand its thermal storage performance. its model includes a helical heat exchanger pipe model and a hot water storage tank model. the distributed parameter simulation model of the helical heat exchanger pipe and the planar mathematics model are

    此外,為了解hpacdhws中蓄熱裝置的蓄熱特性,建立了螺旋管換熱器的分佈參數模型,並根據傳熱學和流體力學理論,建立了二維蓄熱水箱的流動及傳熱數學模型。
  2. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型,對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件,且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同,界面態引起的器件特性的退化不同.溝道摻雜濃度提高,同樣的界面態密度造成的漏極特性漂移增大
  3. Combining with the practical project, the development of an instrument for multi - channel harmonic detection and analysis were described in the third chapter, including the system structure, hardware and software of the device. then the technology of multi - channel data gathering was discussed, and some key techniques have been presented including high precision 、 high speed sampling of the voltage and current, fast flourier transform ( fft ), data compression and storage techniques, planar graphic fitting, three dimensional graphic projection, multithreading and the computer graphics techniques

    第三章結合多通道諧波監測及故障錄波一體化裝置的研製這一課題,介紹了裝置的體系結構和硬體、軟體構成,詳細介紹了在裝置研究過程中所提出的關鍵技術,主要包括電流電壓信號高精度、高速采樣技術,快速傅立葉變換fft 、數據壓縮存儲技術,多線程技術,二維圖形擬合、三維圖形投影技術及海量存儲技術,計算機圖形技術等。
  4. Passive optical fiber image transmission technology is a new image transmission technology which used optical fiber image transmission bundle as the relay image transmission device, its important advantages are that it can bend the light course, and can achieve to parallel and real - time planar image soft transmission in the case of passive observation, also it can greatly simplify the structure of long light course system, and reduce the volume of optical instrument, as well as the weight of equipment, so it has wide military and civil application future

    無源光纖傳像技術是一種應用光纖傳像束作為中繼傳像器件的新型的圖像傳輸技術,其重要優點是可實現光路彎曲及被動觀察條件下并行、實時的二維圖像傳輸,並可大大簡化長光路系統結構,減小儀器體積和重量,在軍事上和民用中均具有重要廣泛的應用前景。
  5. Semiconductor planar flight emitting device make it high brightness, softened color, low power consumption, parallel driven, long lifespan and convenient replacement of screens

    可帶串列通訊介面,可與各種帶串列介面的設備進行雙向通信,組成網路控制系統。
  6. A process compilation program is developed to generate process flows from schematic representations of planar semiconductor device by two steps : sorting the structures and generating the processes

    針對採用平面工藝的半導體器件的結構信息,通過單元排序和工藝流程生成兩個步驟,生成一個可以實現輸入目標要求的工藝流程。
  7. As the key device of a dwdm system, etching diffraction grating ( edo ) is one of the most potential types of planar waveguide dwdm devices

    作為波分復用中最關鍵的器件,蝕刻衍射光柵( edg )是平面波導密集波分復用器件中很有發展潛力的一種。
  8. From the testing result, it is obvious that both the image and location of defects can be accomplished by use of the image device of ultrasonic c - scanning, which is especially effective for testing planar defects

    檢測結果表明,利用超聲c掃描成像裝置實現了對sicp al復合材料中缺陷的成像和定位,尤其是對該類材料中的平面型缺陷更為有效,能使缺陷成像清晰,易於判別。
  9. During the experiments, a scanning device with high - order accuracy ( planar 2 - d positioning ) was designed to help realize exactly positioning measurement of mfl of specimens. the driving circuit of scanning device was designed

    為實現泄漏磁場數值的精確定位測量,自製了高精度的掃描架及其驅動電路,並將其與弱磁場測量設備高斯計相配合。
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