plasma pressure 中文意思是什麼
plasma pressure
解釋
等離子體壓力-
Factors influencing disinfection efficacy of atmospheric pressure glow discharge plasma
大氣壓輝光放電等離子體消毒效果影響因素 -
The electronic temperature, intensities of all lines and continuous spectra gradually increased with the increment of laser energy, and they got to maximum at different laser energy. our results of copper and aluminum show that there are possibly different thresholds of laser energy to electronic temperature and intensities of emission spectra of laser ablated plasma. at the different environmental gas pressure, spatial emission intensity distribution is explained by the competition among " heat reservoir effect ", " confined effect " and " s hadow effect "
認為cu等離子體羽的發光機制是由電子與粒子的碰撞傳能、電子與離子的復合形成的；隨激光能量的增加， cu等離子體特徵輻射（分立譜） 、連續背景輻射（連續譜） 、電子溫度都出現最大值；結合對al的實驗結果說明：激光燒蝕金屬產生的等離子體，其特徵輻射、連續輻射、電子溫度可能都存在一定的能量閾值；背景氣壓對激光燒蝕等離子體譜線的影響，其機理可以認為是「熱庫效應」 、 「約束效應」及「陰影效應」相互競爭的綜合結果。 -
Constituting 60 % of total plasma protein, and with low molecular weight, albumin contributes about 80 % of the colloid osmotic pressure
因其占血清總蛋白質的60 %和低分子量的特性，白蛋白司職約80 %的膠體滲透壓。 -
In this paper, we focus on the following three topics : ( i ) density distribution of dusty plasma in the low - pressure collisionless positive column the radial density distributions of electron, ion and dust particle in the low - pressure collisionless positive column are investigated with a fluid theory and a self - consistent dust - charging model
本文著重以下三個方面的研究： （ ）低氣壓無碰撞輝光放電正柱區塵埃等離子體密度徑向分佈本文採用流體模型和自洽的塵埃充電模型，研究了低氣壓無碰撞輝光放電正柱區的電子密度、離子密度和塵埃粒子密度的徑向分佈。 -
Effects of yangxue qingnao granules on blood pressure and plasma levels of endothelin, calcitonin gene related peptide and no in rats with renal hypertension
養血清腦顆粒對腎性高血壓大鼠血壓及血管活性物質的影響 -
However, the speed of penetration is equal to predicted value by fluid theory only in c + + plasma with uniform density profile. on other conditions, strong two - dimensional effects, electrostatic accelerating, magnetic pressure and plasma pressure should be included in the fluid analysis
不過，值得注意的是僅有均勻分佈的c ~ （ + + ）等離子體條件下，磁場滲透速度與簡化流體理論分析結果基本相同，而其它條件下的磁場滲透速度均與理論結果存在一定的差異。 -
In this dissertation, we mainly report on a laser - produced plasma ( lpp ) source with liquid aerosol spray target. for sufficiently high backing pressure and low temperature, the valve reservoir gas of the light source can undergo a gas - to - liquid transition
液體微滴噴射靶激光等離子體（ lpp ）光源是一種具有較高的軟x射線轉換效率且能夠長期連續運行的低碎屑光源。 -
The physical characteristic of forming plasma within resonant cavity was revealed, i. e. the forming mechanism is a switching process from the ionization caused by strong electric field at the initial stage of mpt ' s start to another ionization caused by joule ' s heat at the stage of mpt ' s steady work. the main influencing factors of mpt ' s steady work were studied. anther pointed out the matching between pressure in resonant cavity and microwave power is the determinant factor to the plasma whether stabilization or extinguishing
分析了mpt諧振腔內微波能量的轉換過程，揭示了其內等離子體的形成是由mpt啟動初期的強電場電離形成放電區過渡到穩定工作期的熱電離形成穩態等離子體區這一物理本質；研究了影響mpt穩定工作的主要因素，指出微波有效功率與諧振腔內氣體壓強的匹配是維持等離子體穩定、避免等離子體消失、放電區熄滅的關鍵因素。 -
Pop plasma oncotic pressure
血漿膠體滲透壓 -
This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film. by means of single probe and double probe, the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed. the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained
利用單探針和雙探針診斷30mm高反應室和50mm高反應室在各種工藝條件下的離子密度和電子溫度，得到這兩個參數在反應室軸向位置的空間分佈、隨功率和氣壓的變化曲線、頂蓋接地和反應室體積對它們的影響，結果表明離子密度為10 ~ 8 10 ~ （ 10 ） cm ~ （ - 3 ） ，電子溫度在4 10ev之間；當頂蓋接地時，該處的等離子體密度明顯大於不接地；在同樣條件下， 50mm高反應室內的離子密度明顯大於30mm高反應室。 -
If the focal point of the len shifts around the surface of the sample, the mass ablation, the temperature of the plasma and the spectral intensity appear asymmetric and their maximum occur at the location which is about 0. 4mm under the surface of the sample. ( 2 ) to the plasma of the aluminum alloy sample, when the operating voltage is 1600v, the height from the observed location of the plasma to the surface of the sample is 2mm and the argon pressure is 660 torr, the spectral intensity have the maximum values
（ 2 ）對于標準鋁樣品，在激光器工作電壓為1600v 、等離子體觀測高度為2mm 、氬氣壓力為660乇時，其譜線強度最強；以al 308 . 22nm 、 al 309 . 27nm兩條譜線為分析線，發現隨著環境氣壓的增大，譜線自吸效應明顯增強，當環境氣壓達到600 - 700乇時，譜線幾乎產生自蝕。 -
In this experiment, a neodymium glass laser is used to study the effects of the operating voltage, power density, the height from the observed location of the plasma to the surface of the sample, the location of the sample, the gas composition and the pressure on the intensity and quality of the spectrum
本文採用高能量釹玻璃激光器，研究了激光器工作電壓、功率密度、等離子體的觀測高度、樣品位置、環境氣體及氣壓對等離子體的譜線強度及譜線質量的影響，獲得了最佳的實驗條件，並測量了金屬分析樣品中某些元素的含量。 -
The surface of pylen nonwoven fabric was treated by argon plasma treatment, and the effects of the plasma power, plasma treating time and pressure on the mechanical properties of pylen nonwoven fabric were studied
摘要研究了應用氬氣等離子體表面改性技術對丙綸非織造織物進行處理的技術，探討了處理時放電功率、放電時間、反應壓力等對丙綸非織造織物的力學性能的影響。 -
The result shows that argon gas can not only promote the excitation of plasma at low pressure, but also improve discharge state, increase the density and activation of reaction radical and improve the quality of diamond films. on the other side, argon can cool the plasma and maintain low temperature of substrate due to its big ionization section and high collision probability with gas molecules
結果表明，氣體系統中引入氬氣一方面不僅有利於維持低壓放電，而且改善放電狀態，提高反應活性基濃度和活性，提高低溫沉積金剛石膜的質量；另一方面，由於其大的電離截面使其和電子碰撞的幾率大大提高，對等離子體進行冷卻，有利於基片溫度的降低。 -
No matter how different the discharge scheme is, low pressure discharge plasmas take a common characteristic of bright glow and is generally entitled as low temperature glow discharge. glow discharge plasma has been selected as a most suitable system for plasma diagnostics in laboratory and for application technology development because of its good stability and reproducibility
利用n _ 2輝光放電中n _ 2 ~ +的發射光譜研究了放電空間的溫度分佈的變化規律，發現了直流放電的一些重要特性，如阻礙輝光與正常輝光的光譜差別。 -
The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。 -
Interpretation : gki infusions significantly reduced plasma glucose concentrations and blood pressure
結論：靜脈滴注gki顯著降低血壓和血糖濃度。 -
Plasma nitriding is an application way to metal surface and heating treatment based on the formed plasma by glow discharge. nitriding is a way of heating treatment, namely, metal accessory is put into activate nitrogen and the gas of low light pressure is ionized into energy electrons, high energy ions and high energy neutral atoms by the action of the electric field under a definite temperature and the time of the heat preservation
等離子滲氮是利用輝光放電形成等離子體在金屬表面，熱處理方面的應用，滲氮是強化金屬表面的一種熱處理方法，是將金屬零件置於活性氮的介質中，在一定溫度和保溫時間下，低光壓氣體在電場作用下使之電離產生能電子、高能離子和高能中性原子。 -
When the third pretreatment method was adopted, microwave input power was 700w, gas pressure was 1000pa and substrate was tangent on plasma ball surface, diamond films showed higher nucleation density by contrast
經過對比採用方案基片處理方式，基片和等離子球處于相切位置時，在微波輸入功率700w和反應氣壓1000pa時沉積工藝參數時，基片成核密度較高。 -
In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous
實驗結果顯示，用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜，與矽片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a / min左右；在基板溫度410時有最大的硬度可達16gpa ；其應力為壓縮應力，可達- 75mpa ；薄膜的臨界荷重為46 . 5un 。
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