point probe 中文意思是什麼

point probe 解釋
點探測器
  • point : n 1 尖頭，尖端；尖頭器具；〈美國〉筆尖；接種針，雕刻針，編織針；小岬，小地角；【拳擊】下巴。2 【...
  • probe : n 1 【醫學】探針；探示器；取樣器；【物理學】試探電極。2 【醫學】（對傷處等的）針探，探查；刺探；...
  1. Notice some corners much and much, will have already concealed to see a point to test you to probe an ability, a very divertive game. find out 12 kind things in the room first, there are more difficult several kinds to seek. bring about a pillow, the blind side that click the bedside and mattress contain one section battery, another a the section battery is also nearby in the bed, turning on a television, there is one personal dancing, he will point out a place finally, there is the star number manifestation, notice and wait film to broadcast to finish to click again 3 times, the safe - deposit box would appear

    多多注意一些角落，會有隱藏視點考考你的偵察能力，非常好玩的一個游戲.先在房間里找到12樣東西，有幾樣比較難找.把枕頭掀起，點擊床頭和床墊的縫隙處有一節電池，另外一節電池也在床附近，打開電視，有一個人跳舞，最後他會指出一個地方，有星號顯示，注意要等影片播放完再點擊3次，保險箱才會出現！
  2. Complexation retitrate end point error margin probe into

    絡合返滴定終點誤差探討
  3. Probe into point centering errors of short - side traverse of the theodolite

    短邊經緯儀導線點位對中誤差的探討
  4. The focal point of this thesis is to probe into the policy factor of causing the state which is " peasants are very bitter, the countryside is very poor, current situation on agriculture very dangerous ", and to make some probing in theory, and to put forward some policy suggestions for solving it

    而本文的重點則是在「農民真苦，農村真窮，農業真危險」的現狀上探討造成這種狀況的政策性因素以及為解決「三農」問題在理論上作的一些探討和提出的一些政策性建議。
  5. The surface resistance and electromagnetic interference ( emi ) shielding effectiveness of the conductive fabrics were measured by four point probe method ( astmf 390 ) and the coaxial transmission line method ( astm d4935 - 99 ), respectively

    分別用四探針法和雙軸傳輸線法測量了導電滌綸織物的表面電阻和電磁屏蔽效能。
  6. Testing method of resistivity for silicon crystals and silicon wafers with four - point probe

    用四點探針法對硅晶體和矽片電阻率的測試方法
  7. With the development of science and technology, the need of micro system is more and more urgent in many technical fields, such as various operation of cell and polymerized substances, micro surgery, scanning probe microscope ( spm ), butting optical fiber, fine manufacturing etc. with the development of micro - technology, micro mechanism, which has the character of micro size or micro motion is new high technology from microcosmic point of view understanding and reconstructing the world, micro mechanism technology is important means for researching nanotechnology, so the micro stereo vision ( msv ) techniques are demanded urgently in microcosmic domain

    隨著科學技術的發展，許多領域越來越迫切地需要微型系統或微動系統，如生物細胞、聚合物的各種操作、微外科手術、掃描探針顯微鏡spm 、光纖對接和微細加工等；而且隨著微技術的不斷發展，以形狀尺寸微小、操作尺度極小為特徵的微機械已成為人們從微觀角度認識和改造客觀世界的一種高新技術；微機械技術還有望成為研究納米技術的重要手段，因此在微觀領域迫切要求顯微立體視覺技術的發展。
  8. Testing method for resistivity of conductive plastics with a four - point probe array

    用四點探針排列法測定傳導塑料電阻率的測試方法
  9. Test method for resistivity of conductive fine ceramic thin films with a four - point probe array

    用四點探針排列法測定傳導精細陶瓷薄膜電阻率的試驗方法
  10. The nanocomposites have been characterized by four - point probe conductivity measurements, uv - vis, transmission electron micrograph. the results show that polyaniline / tio2 has higher conductivity ( xl0 compared with that " of eb, the uv - vis spectra properties of polyaniline / ti02 depend on the ratio of tio2 to polyaniline. the uv - vis spectra of nanocomposites doped with hcsa take place red - shift and possess higher conductivity and better solubility compared with those of nanocomposites and pani

    並對樟腦磺酸摻雜聚苯胺（ csa - pani ）的性能，及其在不同的有機溶劑中的紫外-可見吸收光譜進行了詳細的探索，本文還對csa - pani成膜進行了探索，結果表明： csa - pani在間甲酚中具有最好的溶解性，並能保持基本的穩定，是成膜的理想體系。
  11. This is the first time in this field. 2. putting forward rymaszewski method to square four point probe measurement

    利用rymaszewski法自動消除探針縱向游移影響的優點，將它應用於方形探針測試法中3
  12. Generic specification of four - point probe

    四探針探頭通用技術條件
  13. Four - point probe - test equipment used to test resistivity of wafers

    四探針-測量半導體晶的阻電面表片設備。
  14. Generic specification of resistivity measuring instrument with four - point probe

    直流四探針電阻率測試儀通用技術條件
  15. Standard practice for measuring sheet resistance of thin film conductors for flat panel display manufacturing using a four - point probe

    使用四點探測法測定專業平板顯示器用薄膜導線的薄膜電阻的標準規程
  16. Many important properties of semiconductor devices are relevant with their resistivity, which brings forward strict demands to the uniformity of the resistivity. especially micro - area ' s characteristics attract extensive attention. under this background, four - point probe measurement technique requires a new development

    許多器件的重要參數與電阻率有關，因此這對晶體電阻率的均勻性，電學特性提出了更為嚴格的要求，特別是微區的電特性和均勻性引起了人們的廣泛關注。
  17. Four - point probe measurement technique is one of the most extensive means for examining the resistivity in the semiconductor industry. with continuous progress, semiconductor industry develops at a very fast speed, the integration level of ic becomes higher and higher. presently, the ic production is entering into the age of ulsi, then testings are more and more important

    四探針測試技術是半導體工業檢測電阻率時採用最為廣泛的測試手段之一。隨著時代的不斷進步，半導體產業飛速發展，以單晶矽片為襯底的集成電路集成度越來越高，目前正進入甚大規模集成電路（ ulsi ）時代，測試在整個集成電路生產過程中的地位越來越重要。
  18. In this paper, the research actuality status of zno thin film ’ s structural character, preparation methods and electrical - optical properties is summarized. the effect of sputtering parameters, annealing parameters and doped sb2o3 on the structure, optical absorption and electrical properties of zno thin film is studied by sem, xrd, xps, eds, uv - vis spectrophotometer, hall effect detector, four - point probe electric resistance measurement and direct - current impedance measurement etc. the results of sem, xrd and edx show that zno thin film possesses good processing stability

    本文在綜述zno薄膜的結構特性、制備方法和光電性能等現狀的基礎上，採用射頻磁控濺射技術制備了純和sb _ 2o _ 3摻雜的zno薄膜，採用sem 、臺階儀、 xrd 、 xps 、 uv - vis分光光度計分析、電阻儀、阻抗譜儀等儀器設備分別研究了濺射工藝參數、退火工藝參數和sb _ 2o _ 3摻雜對zno薄膜結構特性、光吸收性能和電學特性的影響規律。
  19. The experimental instruments, apparatus and the means to prepare all the samples are introduced in the first section. in section 2, the experimental system including the oxidization system and diffusion system, are introduced therein. in section 3, the samples preparation including the pre - deposition, redistribution and re - oxidization, the samples of b doping, and the fabrication of ga - diffusion transistor, b - diffusion and the transistor formed by b diffusion following ga diffusion are detailed therein, and the as - prepared samples are analyzed by sims, srp and four point probe

    首先介紹了制備各種樣品所用的實驗儀器、設備與方法；第二節中介紹了實驗系統，包括氧化系統、擴散系統，第三節介紹了樣品的制備，包括ga的預沉積、再分佈、二次氧化樣品，擴硼樣品，以及擴嫁晶體管、擴硼晶體管和擴鐮后再補充擴硼晶體管的制備流程；實驗所得樣品，藉助二次離子質譜（ sims ） 、擴展電阻（ srp ） 、四探針薄層電阻等先進的測試分析方法進行分析。
  20. Accomplishing the development of square four point probe instrument with the function of image manipulation for testing sheet resistance automatically

    4完成具有圖像識別功能的全自動四探針微區電阻率測試儀的研製。
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