power transistor 中文意思是什麼

power transistor 解釋
功率晶體管
  • power : n 1 力，力量；能力；體力，精力；（生理）機能；〈常 pl 〉才能。2 勢力，權力，權限；威力；政權；權...
  • transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
  1. Semiconductor discrete device. detail specification for pnp silicon low - power transistor for type 3cg110gp gt and gct classes

    半導體分立器件gp gt和gct級3cg110型pnp硅小功率晶體管.詳細規范
  2. Semiconductor discrete device. detail specification for npn silicon high - frequency low - power transistor for type 3dg130gp gt and gct classes

    半導體分立器件gp gt和gct級3dg130型npn硅高頻小功率晶體管.詳細規范
  3. Semiconductor discrete devices. detail specification for type 3da89 high - frequency power transistor

    半導體分立器件. 3da89型高頻功率晶體管詳細規范
  4. Semiconductor discrete device. detail specification for type 3da150 high frequency and power transistor

    半導體分立器件. 3da150型高頻功率晶體管詳細規范
  5. Specification for silicon epitaxial wafer for microwave power transistor

    微波功率晶體管用硅外延片規范
  6. Power over ethernet power transistor diodes

    功率晶體管二極體
  7. The technology for three - phase cycloconverter has broad background in industry application. the common mode of its usage is to convert the shapes of electronic energy with power transistor elements. the conversion of the shapes of the electronic energy include amplitudes, frequencies, and forms of the voltage or current which can make the shapes of electronic energy suitable for different kinds of electronic equipments

    三相交-交變頻電源技術是一門應用性很強的技術，其應用的主要方式就是採用功率半導體器件，對電能進行變換?包括電壓和電流的幅值、頻率和波形等方面的變換，以達到使電能更好地符合各種不同用電設備的要求。
  8. Pwd high power transistor burn - in system

    Pwd系列大功率晶體管老化系統
  9. Semiconductor discrete device. detail specification for type 3cd050 power transistor

    半導體分立器件. 3cd050型功率晶體管詳細規范
  10. Semiconductor discrete device. detail specification for type 3dd164 power transistor

    半導體分立器件. 3dd164型功率晶體管詳細規范
  11. Semiconductor discrete device. detail specification for type 3dd155 power transistor

    半導體分立器件. 3dd155型功率晶體管詳細規范
  12. In this paper, we resolve the question of high temperature when these high power transistor, and put forward that improving disseminate path and increasing interface area for disseminate will be achieved

    文中有效解決了大功率晶體管的在工作時的發熱量較大的不利因素，提出改進散熱通道和加大散熱的接觸面積等可行的方法。
  13. Semiconductor discrete devices. detail specification for type 3dg135 silicon ultra high frequency low - power transistor

    半導體分立器件. 3dg135型硅超高頻小功率晶體管詳細規范
  14. Semiconductor discrete device. detail specification for silicon npn high - frequency low - power transistor of type 3dg120

    半導體分立器件. 3dg120型npn硅高頻小功率晶體管.詳細規范
  15. Semiconductor discrete device. detail specification for silicon npn high - frequency low - power transistor of type 3dg111

    半導體分立器件. 3dg111型npn硅高頻小功率晶體管.詳細規范
  16. Semiconductor discrete devices. detail specification for type 3dg144 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg144型npn硅高頻低噪聲小功率晶體管詳細規范
  17. Semiconductor discrete devices. detail specification for type 3dg143 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg143型npn硅高頻低噪聲小功率晶體管詳細規范
  18. Semiconductor discrete devices. detail specification for type 3dg142 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg142型npn硅高頻低噪聲小功率晶體管詳細規范
  19. Detail specification for electronic components. type 3da98 npn silicon high - frequency power transistor

    電子元器件詳細規范. 3da98型npn硅高頻大功率晶體管
  20. There are three power transistor which have been widely used in s band now : bipolar junction transistor ( bjt ), gaas metal - oxide semiconductor field effect transistor ( gaas mosfet ) and lateral diffuse metal - oxide semiconductor field effect transistor ( ldmos fet ). thanks to the advantages, such as, wide frequency, easy power supply, good stability, the ldmos fet has used in the motion telecommunication

    目前在s波段人們常用的放大器有雙極性晶體管（ bjt ） 、砷化鎵場效應晶體管（ gaasmosfet ） 、邊緣擴散場效應晶體管（ ldmosfet ）等，由於ldmosfet具有頻帶寬、供電方便、穩定可靠等優勢，目前已經廣泛用於移動通信3g的研究。
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