precipitation annealing 中文意思是什麼
precipitation annealing
解釋
析出退火- precipitation : n. 1. 猛然摔下，落下。2. 猛沖；急躁，輕率，魯莽。3. 【化學】沉澱（作用）；降雨（量）；（雨、雪等的）降落。
- annealing : 熱處理
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The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed
本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。 -
Then, the effect of heavily doped boron on ig of czochralski silicon was also investigated. it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature, ramping annealing respectively. for conventional high - low - high three - step ig annealing, the dz becomes narrower and bmd density is higher in hb samples than that in lb samples, as a result of hb enhancing oxygen precipitation
結果顯示，單步高溫熱處理時重摻硼樣品不能形成潔凈區；降溫退火中，降溫速度較為緩慢（ 3 / min ）時能生成一定量的氧沉澱，但沒有潔凈區形成；普通高?低?高三步熱處理過程中，形成明顯的潔凈區，但相對輕摻樣品而言，潔凈區較窄，氧沉澱密度明顯偏高，說明重摻硼樣品吸雜能力強。 -
The experimental results showed that high density of oxygen precipitation and induced - defects were formed after annealing of wafers at moderate and high temperatures
重摻砷硅單晶在中高溫退火時形成密度較高的氧沉澱及誘生缺陷。 -
Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well
結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。 -
Both the size and density of oxygen precipitation increase with the annealing time, and the size of oxygen precipitation decrease with the increase of the annealing temperature
隨著退火時間的延長氧沉澱尺寸增大，密度略有增加；隨著退火溫度的升高，氧沉澱尺寸相對減小。 -
In this thesis, we studied systematically the influence of the annealing on the crystallite structure and fluorescence of zns nanoparticles and the surface state of zns nanoparticles. the main results and innovation are as follows : 1. zns nanocrystallite was prepared by co - precipitation
本文以退火和清洗為實驗手段，較深入的研究了zns納米晶顆粒尺寸、結構相變、顆粒表面態和發光性質，論文主要內容如下： 1用均相沉澱法合成了晶粒度為11nm的zns納米晶。
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