preliminary cleaning 中文意思是什麼
preliminary cleaning
解釋
初步凈化- preliminary : adj 1 預備的；初步的，初級的。2 序言性的，緒言的。n 1 〈常 pl 〉初步，開端；預備行為[步驟、措施]...
- cleaning : n 1 清潔法；掃除；清洗，洗滌；（種子的）清選。2 〈常 pl 〉（牛、羊等的）胞衣。3 【林業】除伐。4 ...
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In this paper, the preliminary method, principle and test equipment of laser cleaning are mainly introduced, and high cleanness surface is obtained by means of laser cleaning the contaminated particles on optical substrate surface
介紹了光學基片表面軟質拋光膠體粒子激光清洗的基本方法、原理和實驗裝置，並通過對含有污染微粒的基片表面進行激光清洗，獲得了高潔凈表面的光學基片 -
In the case of cotton processing, opening is necessary preliminary to cleaning.
在紡棉的情況下，開棉是除雜前必須的。 -
Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )
本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
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