proton-induced reaction 中文意思是什麼
proton-induced reaction
解釋
質子誘發反應-
Nuclear reaction is the important mechanism for causing single event upset as well, especially for high - energy protons. all the formula needed for simulating proton - induced radiation effects are deduced. to bypass the obstacle of lacking nuclear reaction parameters of high - energy protons interacting with silicon, the author successfully obtained the necessary nuclear reaction cross sections by combining an intranuclear cascade nuclear reaction model with monte - carlo simulation, which are applied to the calculation of seu
整理、推導了數值模擬所需要的計算公式及連續慢化近似下的輸運方程，自行編制了輻射屏蔽計算程序、單粒子效應計算程序、熱?力學效應計算程序，並對所有計算程序進行了對應的驗算，計算結果與公開發表的理論或實驗結果相符合。 -
The calculated results show that, for low energy protons ( energy less than several decade mev ), the contribution of proton nuclear reaction to energy deposition can be neglected ; while for high energy protons ( energy greater than several hundred mev ), the great difference appears for the above two cases. this gives us an indication that the contribution of proton nuclear reaction to the energy deposition must be concerned for high - energy protons. the propagation process in material of thermal shock wave induced by high - energy intense - current pulsed proton beam irradiation is calculated for several different proton energies
對于入射能注量為418 （ j cm ~ 2 ）脈沖寬度為0 . 1 s的矩形脈沖強流質子束，計算結果表明，由於質子束能量不同，引起的初始熱激波（ 0 . 1 s時刻的熱激波）有單峰結構，也有雙峰結構，不同能量的強流質子束引起的熱激波在傳播的過程中都會出現明顯的彈性前驅波。 -
This paper deals with the monte carlo simulation of high - energy protons transport in silicon, in which the intra - nuclear cascade model is used to deal with proton nuclear reaction process. and the results of radiation effects of proton in silicon and p - seu ( proton induced single event upset ) cross section of some electronic devices are presented
本文用蒙特卡羅方法對高能質子（最高能量在500mev以上）在硅材料中的輸運過程進行了模擬，作了用核內級聯模型計算質子核反應的嘗試，計算了質子對硅材料的輻射效應及其對硅器件的單粒子效應。
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