quantum well 中文意思是什麼

quantum well 解釋
量子井
  • quantum : n. （pl. -ta ）1. 量，額；定量，定額；份；總量。2. 【物理學】量子。
  • well : n 1 井。2 泉水；源頭，來源。3 坑，穴，凹處；【礦物】礦井，豎坑；【軍事】（地雷的）井坑；【建築】...
  1. Binding energy of bound polaron in parabolic quantum well

    拋物阱中束縛極化子的結合能
  2. The exciton lifetime in quantum well is up to 1. 8 ps under the thickness of znse barrier layer lonm

    在znse隔離層厚度10nm時，阱中的激子壽命為1 . 8ps 。
  3. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  4. Advanced cooled quantum well infrared photodetector qwip

    先進的製冷型長波量子阱紅外光電探測器
  5. Detectors ( contd. ) : vertical vs. in - plane geometries. quantum well intersubband photodetectors

    垂直與平面結構。量子井次能帶間躍遷型光偵測器。
  6. Numerical study of voltage - current characteristics in a three - quantum - well superlattice unit

    三量子阱超晶格單元結構電流特性的數值研究
  7. Effect of structural parameters on current - voltage characteristics in a three - quantum - well superlattice unit

    結構參數對三量子阱超晶格單元結構伏安特性的影響
  8. Finally, we got the 940nm ingaas / algaas strained quantum well semiconductor laser

    最終獲得ingaas / algaas結構的940nm應變量子阱半導體激光器。
  9. In this thesis, the 940nm high power ingaas / algaas strained quantum well semiconductor laser has been studied

    論文對ingaas / algaas高功率940nm應變量子阱半導體激光器進行了研究。
  10. We have grown ingaas / algaas strained quantum well laser by mbe. we studied the doped density in the cladding layer

    採用分子束外延設備mbe （ molecularbeamepitaxy ）對所設計的應變量子阱結構激光器進行晶體生長。
  11. Materials design and grow of strained quantum well lasers with high characteristic temperature

    高特徵溫度應變量子阱激光器材料設計與生長
  12. The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high cod limit, which make ld lasers achieve higher output power and longer ufe. therefore, ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers

    Ingaas / gaas應變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學災變損傷閾值，這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應變量子阱結構可以用於大功率半導體激光器的制備。
  13. Because a conventional quantum well is needed to add in the novel structure, many experiments were made on conventional gaas / algaas qwips. the experiment results based on various test methods were well analyzed. the detectivity of conventional gaas / algaas qwips can be comparable to the current level gradually

    由於改進結構中需要加入一常規量子阱，因此針對常規結構做了部分實驗，由多種測試方法得到大量實驗數據，並對其進行了全面的分析，常規gaas algaas量子阱紅外探測器的研製已經逐步趨向正常化。
  14. We creatively apply this way to the bounded polaron in the parabolic quantum well and get the analytical expressions of the ground state energy of an electron bound to a hydrogenic impurity in a parabolic quantum well in an electric field

    我們開創性的把它應用到處理有拋物線量子阱中的束縛極化子，得到了有外電場的量子阱中，類氫雜質中的電子基態能量的解析結果。
  15. Using a simple variation - fitting method ， the exciton binding energies of a sawtooth - shaped quantum well are calculated as a function of an electric field ， and the explanation of the results is also given

    採用一種變分擬合的簡單方法計算了電場下鋸齒型多量子阱的激子結合能，對計算結果給出了合理的解釋
  16. Gaas / algaas quantum well photodetectors ( qwips ) are new type devices and progressed rapidly in recent 20 years. qwips utilizing intersubband absorption between gallium arsenide ( gaas ) well and aluminum gallium arsenide ( alxga1 _ xas ) barriers were perfected. therefore, the ability to accurately control the band structure and hence the spectral response, as well as both established technology for growing and processing gaas optical devices and commercially available large area vlsi gaas ic ' s, makes gaas / algaas qwips attractive devices for use in very large focal plane arrays ( fpas ), especially available in the range of long wavelength 8 - 12 urn

    Gaas algaas量子阱紅外探測器（ qwips ）是近二十年來迅速發展起來的一種新型紅外探測器，它成功地利用了gaas勢阱和al _ xga _ （ 1 - x ） as勢壘之間的子帶間吸收，使之具有能帶結構可精確設計從而獲得指定光譜響應的特點，加之成熟的材料生長技術、器件工藝，以及商業上可獲得大面積的vlsigaas集成電路，使得gaas algaasqwips尤其適宜製作8 12 m長波范圍的大面陣探測器。
  17. 3. we have analyzed the single layer material, quantum well material and material comprise of superlattice by using kinematics and dynamics in a comparative way

    3 .對單外延層結構材料、量子阱結構材料、含超晶格結構材料等，分別應用動力學理論和運動學理論作了對比分析。
  18. The thesis concerns mainly about the bounded polaronic effect in the parabolic quantum well in an electric field

    本論文主要討論了在有外電場時拋物線量子阱中的束縛極化子效應。
  19. Hole - sheet - density in sige pmos quantum well with - doping - layer

    量子阱溝道空穴面密度研究
  20. We adopted the same basis states as they used to construct the quantum - well d ~ centers " wave function

    用這個波函數研究了量子阱中帶負電激子的一些性質。
分享友人
分享到 Line

分享到臉書