quantum-well laser 中文意思是什麼

quantum-well laser 解釋
量子阱激光器
  • quantum : n. （pl. -ta ）1. 量，額；定量，定額；份；總量。2. 【物理學】量子。
  • well : n 1 井。2 泉水；源頭，來源。3 坑，穴，凹處；【礦物】礦井，豎坑；【軍事】（地雷的）井坑；【建築】...
  • laser : n 鐳射激光，受激發射光，激光；萊塞；激光器，光激射器 （ ＝ light amplification by stimulated emis...
  1. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  2. Finally, we got the 940nm ingaas / algaas strained quantum well semiconductor laser

    最終獲得ingaas / algaas結構的940nm應變量子阱半導體激光器。
  3. In this thesis, the 940nm high power ingaas / algaas strained quantum well semiconductor laser has been studied

    論文對ingaas / algaas高功率940nm應變量子阱半導體激光器進行了研究。
  4. We have grown ingaas / algaas strained quantum well laser by mbe. we studied the doped density in the cladding layer

    採用分子束外延設備mbe （ molecularbeamepitaxy ）對所設計的應變量子阱結構激光器進行晶體生長。
  5. For the wave - guide of sch - sqw 940nm quantum well laser, we used this way to simulate and compare, got the far - field corner 35. 8 when the al percent was 25 % and wave - guide ' s thickness was 150nm. compare with the results former, this value was improved much

    對于本文中採用的分別限制單量子阱發光波長940nm半導體激光器的波導結構，利用該理論方法進行模擬對比后，得到當波導層al組分為0 . 25寬度為150nm時遠場發散角為35 . 8 ，較以往有很大的改善。
  6. Laser diodes ( contd. ) : in - plane lasers : double heterostructure, quantum well, multi - contact, surface emitting

    平面雷射：雙異質結構，量子井，多重電極，面發射。
  7. Laser diodes : feedback and stimulated emission. cavity design ; double heterostructure concept. quantum well, wire, dot active regions. strained layers ; pseudomorphic active regions

    回饋與受激放射。共振腔設計，雙異質結構之概念，量子井、量子線與量子點之主動層。應變層，假晶材料之主動層。
  8. Study of optical coatings for high power 808nm quantum well laser through experiments

    大功率量子阱激光器腔面鍍膜實驗研究
  9. Optimized layers design for algan gan ingan symmetrical separate confinement heterojunction multi - quantum well laser diode

    對稱分別限制多量子阱激光器的優化設計
  10. Based on these analyses, we see that the si - based quantum - dot laser has higher gain and differential gain, its threshold current is more lower and the threshold current is insensitive to temperature when si - based quantum - dot laser compares with normal semiconductor laser and quantum - well laser

    分析表明，與普通激光器和量子阱激光器相比， si基量子點激光器有更高的增益和微分增益，閾值電流更低，閾值電流對溫度更不敏感。
  11. Ingaasp long - wavelength quantum well laser is at present appied most extensively in optical fiber communication. structuring its circuit model can optimize the design of the optical transmitter and it is significant to design high - qualitied optical communication system

    Ingaasp四元系長波長量子阱激光器是目前在高速光纖通信中應用最為廣泛的一類激光源，構建其電路模型有助於完成光發射機的優化設計，這對于高質量的光通信傳輸系統有非常重要的意義。
  12. In this thesis, the basic operation in the optical computation was studied by analyzing the course of laser beams transmitting through a vmm, which is composed of an array of vertical cavity surface - emitting lasers, spherical and cylindrical lens, an array of multiple quantum well spatial light modulators and an array of the detectors

    本文研究的光學矢量-矩陣乘法器主要是由垂直腔面發射激光器（ vcsel ）陣列、球面透鏡和柱面透鏡組、多量子阱空間光調制器（ mqwslm ）及ccd陣列構成。作為小尺寸的集成光學器件，必須要考慮衍射的作用。
  13. However, ingaas strained - layer single quantum well lasers, optimized for low threshold current and low series resistance, have a highly elliptical beam structure emanating from the laser facet

    但是報道的技術中多是針對圓對稱光束或近圓對稱光束。
  14. In addition, this paper has analyzed and calculated the wave - guide mode theory, got the quantum well laser photic - field distribution ' s fluctuation equation, deduced the far - field distribution ' s mathematics model by the method of stepwise approached, and simulated the near - field and far - field about the laser with computer software. we utilized a pair of mode expand layers which can restricted in photic - field to narrowed the far - field comer about quantum well laser material structure ( the corner was about 21 ?

    另外本文還對光波導模式理論進行了理論分析和計算，得到了量子阱激光器光場分佈的波動方程，利用逐步逼近的方法推導出了遠場分佈的數值模型，通過計算機軟體模擬出了激光器遠近場分布圖，並利用模式擴展層對光場的限製作用得到了窄遠場發散角（約為21 ）的量子阱激光器材料結構。
  15. The structure of the strained quantum well laser has been optimized, not only the well layer, the barrier layer, the waveguide layer and the cladding layer but also the content of al, in have been studied and designed

    對應變量子阱激光器的結構進行了優化設計，對半導體激光器的阱層、壘層、波導層和限制層的厚度及in 、 al元素的含量進行了研究和設計。
  16. Double wavelength semiconductor lasers is a kind of novel diode lasers with the function of emitting two wavelength laser. there are various use for double wavelength semiconductor lasers in the different band. 650nm / 780nm double wavelength quantum well lasers mainly apply to the optical pickups of dvd - rom driver and dvd player

    雙波長半導體激光器是一種能夠發射兩種波長激光的新型半導體器件，不同波段的雙波長半導體激光器有著不同用途， 650nm 780nm雙波長量子阱激光器主要應用在dvd - rom驅動器和dvd播放機的光學讀取等方面，而大功率950nm 990nm雙波長量子阱激光器主要應用於光學測量等方面。
  17. For our laboratory is changing toward industrialization, a lot of work on conventional ingaas / gaas / algaas quantum well laser has been done. how the parameters, such as threshold current density, slope efficiency, fwhm and spectrum width, are influenced and how much the influence is, are discussed by the numbers. the effective means how to improve a certain performance parameter are purposed too

    由於本實驗室正處于由試驗研究向產業化邁進的階段，針對常規ingaas / gaas / algaas量子阱激光器做了很多工作，文中系統論述了常規量子阱激光器的各項性能參數?閾值電流密度、斜率效率、遠場發散角、光譜線寬等的影響因素及改進的有效辦法，並針對激光器p ? i線性度不好、遠場發散角出現多瓣的現象，通過理論分析找出原因所在並進行了改進，有效解決了以上問題。
分享友人
分享到 Line

分享到臉書