quenching of luminescence 中文意思是什麼

quenching of luminescence 解釋
發光猝滅
  • quenching : n. 【機械工程】淬火；【物理學】淬熄。
  • of : OF ＝Old French 古法語。
  • luminescence : n. 【物理學】發光，發螢[冷、磷]光。adj. -nescent
  1. The activation effect of zn2 + modification, including enhancement of emission intensity, slowing of luminescence decay and increasing of quantum yields, results from the formation of zns shell outside the nanoparticles, which is passivating the surface of nanoparticles, eliminating the surface quenching centers, so as to block the nonradiative transition pathways through these kind of quenching centers

    Zn ~ （ 2 + ）表面修飾在納米顆粒表面形成了zns殼層，鈍化了納米顆粒的表面，消除了表面猝滅中心，阻塞了通過表面猝滅中心進行無輻射躍遷的通道，從而使得發光強度增加，衰減變慢，量子效率提高。
  2. By calculated judd - ofelt parameters of the npre - 1 glass and luminescence dynamics equation, the author has get the changing curve about light intensity near 1540nm with the increase of er doped concentration. it was observed that the light intensity is the strongest when er doped concentration is 20mol % and the concentration - quenching phenomenon takes place after the concentration is bigger than 20mol %

    5 ）通過建立發光動力學方程，利用j - o計算得到的參數，得出npre - 1樣品1540nm處發光強度隨er3 +離子摻雜濃度的變化規律，看到er3 +離子摻雜mol濃度為20 %時發光最強，大於這個濃度后就發生了濃度猝滅效應。
  3. The result showed that the spin coating method was better relatively. the obvious blue shift of pl was found in spectra of the ps / pmma composite prepared with spin coating. compared to the spectra from original ps sample, the luminescence quenching was greatly decreased for ps / pmma composite due to the prevention to ps layer with coated with pmma film and modification of dielectrical penetrability of the medium in quantum threads by the pmma

    實驗結果表明，用旋塗法實現的pmma固化后再與多孔硅復合而制得的樣品的結果最好，它與原始的多孔硅樣品相比發光峰發生了藍移而且發光強度下降很小，我們認為pmma層有限的厚度和pmma對多孔硅表面的保護使復合后發光強度下降很小，而且制備的多孔硅pmma復合體系的發光強度幾乎不隨時間而下降。
  4. We consider that surface state act as quenching centers. with the irradiation, the surface state decreases and therefore luminescence of mn2 + increases. reduction of quenching centers is the result of chemical change by obtaining energy from zns excited by uv light

    熒光增強的原因是由於zns基質向mn2 +離子和表面態的能量傳遞是兩個相互競爭的過程，紫外光輻照下表面猝滅中心數目不斷減少從而mn2 +離子的發光增強。
  5. But in the moderate electric field 150 kv / cm, there is a sharp change in the configuration and charge distribution of the exciton, i. e. the exciton is directly split into an electron polaron and a hole polaron. the polarization and dissociation happen at a same time, which differs from that in conjugated polymers. and in the strong electric field 350 kv / cm, appear structural phase transition of the chain and luminescence quenching

    同時得到兩個重要的臨界電場值： 1激子解離電場ec1 （ 150kv / cm ） ，在此電場下激子發生瞬間解離，成為電子型極化子和空穴型極化子； 2結構相變電場ec2 （ 350kv / cm ） ，在ec2下二聚化晶格開始被等距晶格取代， ptcl絡合物鏈發生結構相變，並伴隨peierls能隙漸趨消失和發光猝滅的現象出現。
分享友人
分享到 Line

分享到臉書