radiation annealing 中文意思是什麼
radiation annealing
解釋
放射線退火-
Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically
在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。 -
Annealing of radiation damage
輻射損傷退火 -
The experimental results show that the produced radiation damage and its thermal annealing behavior are the same for both irradiations in a - al2o3, and that the heavy ion irradiation can well simulate the neutron and / or proton irradiation
實驗表明，兩種情況下輻照后的- al _ 2o _ 3材料中產生的輻照損傷及其退火效應一致，說明採用重離子輻照可以很好地模擬中子或質子輻照。 -
In order to verify the reliability and validity of the heavy ion irradiation simulation of neutron and proton irradiations, radiation damage and its thermal annealing behavior in a - al2o3 irradiated at the equivalent dose by 85 mev 19f ions and by en > 1 mev neutrons, respectively, are studied
為驗證重離子模擬輻照的可行性，首先進行了等效劑量下的中子輻照與重離子輻照后- al _ 2o _ 3樣品中輻照損傷及其退火效應研究。 -
When irradiation response and dose are linear, total dose radiation and post - irradiation annealing at room temperature are determined for one random by choosing absorbed dose rate, and total dose effect at other absorbed dose rate can be predicted by using linear system theory
研究結果表明，輻射響應與吸收劑量成線性關系時，在實驗室選用任一特定劑量率進行總劑量輻射和輻照后室溫退火，可以通過線性響應理論模擬其它劑量率輻射下的總劑量效應。 -
At first, we investigated the photoluminescence characterization of theion - implanted samples by spectroanalysis, found that the ion implantation would damage the crystal lattice structure and affect the optical radiation of characteristic. moreover, the crystal lattice structure will be restored after annealing, which can be determined by the change of fluorescence peak intensity and blue migration of wavelength
發現mn ~ +離子、 c離子的注入都會損傷樣品的晶格結構，從而影響樣品的發光特性，而退火處理對這些損傷有一定的修復作用，這可以從發光峰強度的變化及波長的藍移來判定。
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