rapid thermal process 中文意思是什麼
rapid thermal process
解釋
快速熱處理-
Finally, the effect of rapid thermal process ( rtp ) on oxygen precipitation in hb is investigated in this paper
最後文章還系統研究了快速熱處理（ rtp ）對重摻硼硅單晶中氧沉澱的影響。 -
With the development of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ), rtp ( rapid thermal process ), which consumes less time and less energy than classical thermal treatments, have been widely employed in semiconductor manufacturing. however, the most importance is that rtp is applied for defects engineering of silicon material. it is generally believed the rtf leads to the injection of additional vacancies into silicon wafer, and then a so - called magic denuded zone ( mdz ) in the near - surface region of cz silicon wafer was formed by controlling the vacancy distribution
隨著大規模集成電路（ vlsi ）和超大規模集成電路的發展，節省時間、節省能量、容易控制的快速熱退火工藝在半導體器件製造工藝中得到了廣泛的應用，並且在硅材料的缺陷工程中發揮了特殊的作用，人們通過高溫快速熱處理在矽片中引入空位，並控制空位的分佈，進而形成了具有較強內吸雜能力的潔凈區。 -
The effect of high temperature in rapid thermal process ( rtp ) on the dissolution of oxygen precipitate generated by two - step ( low - high ) annealing is investigated
摘要通過對已經過兩步（低高）退火的大直徑直拉矽單晶片進行高溫快速熱處理，研究矽中氧沈澱被高溫快速熱處理消融的情況。 -
In this work, the influences of fabrication process on microstructure, dielectric properties, ferroelectric properties and pyroelectric properties of plt films have been studied. plt films were prepared on the pt ( 111 ) / ti / sio2 / si ( 100 ) substrates by radio frequency magnetron sputtering method and then annealed by rapid thermal annealing process ( rta ) or conventional furnace annealing process ( cfa ). with the help of atom force microscopy ( afm ), x - ray diffraction ( xrd ) and some other apparatus, it was found that : lower substrate temperature ( ts ) was helpful for plt films to form better surface morphologies. with the increase of substrate temperature, the dielectric constant of plt films increased
Afm 、 xrd以及性能測試結果表明:較低的基片溫度有利於形成表面均勻緻密的薄膜，且薄膜的表面粗糙度均方根較小;隨著基片溫度的升高，經過快速退火的plt薄膜的介電常數逐漸增大;相比于傳統退火，快速退火縮短了退火時間，提高了薄膜的介電和鐵電性能;快速退火隨著保溫時間的延長，大部分鈣鈦礦結構的特徵峰的峰強增大，半高寬減小，峰形越來越尖銳，但當保溫時間為80s的時候， （ 100 ）和（ 110 ）峰的強度有所下降，因此保溫時間在60s較為適宜。 -
3. to avoid the high temperature process in sige cmos technics, appropriate implantation energy and dose and rtp ( rapid thermal anneal ) are introduced into the the fabrication of sige cmos double - well and source
3 .研究了離子注入法形成sigehcmos的雙阱及源漏工藝。確定了注入的離子類型、劑量、能量等關鍵參數。 -
The influence of rapid thermal process in different gases on the photoluminescence properties of porous silicon was discussed
同時研究了在不同氣氛下的快速熱處理（ rtp ）對多孔硅發光特性的影響。 -
Four blue light emission peaks were found in the pl spectra of porous silicon which was subjected to rapid thermal process ( rtp ). similar results can be got after porous silicon samples were subjected to rtp in different gases
結果表面，在不同的氣氛中（ n 》 o ） ar ，空氣）中rtp處理后，均可得到多孔硅的藍光發射，而且具有很好的重復性。 -
Thin - film area : the area to deposit " dielectric layer " and " metal layer " as the conducted or insulated films, also has cmp ( chemical - mechanical _ polish ) to planarize the chips on the wafer ' s surface and add high ( low ) temprature rtp ( rapid - thermal - process ) to the wafer
薄膜區：專門沉積「介電層」 ， 「金屬層」等導電或不導電薄膜的區域，併兼做晶圓表面器件之平坦化及高（低）溫快速熱退火製程。 -
Tb doped pt thin films with highly ( 100 ) orientation were prepared. rapid thermal annealing process was used to supply enough energy for the movement of the atoms. so perovskite phase began to form at ( 100 ) orientation which had the lowest surface energy
研究發現， pt / tb薄膜系統為非均相成核，利用快速熱處理工藝可控制原子以高能量遷移，使鈣鈦礦結構晶體以表面能最低的（ 100 ）晶面在薄膜生長方向上結晶生長， pt / tb薄膜出現了（ 100 ）晶浙江大學碩士學位論文面的擇優取向。 -
The main work is as the follows : 1. perovskite batio3 thin films are grown on sio2 / si ( 111 ) substrates by sol - gel process and rapid thermal annealing ( rta ) technique
主要工作如下: 1 .用溶膠-凝膠法和快速退火工藝在sio2 / si （ 111 ）基片上生長了鈣鈦礦結構batio3薄膜。
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