reaction bonding 中文意思是什麼

reaction bonding 解釋
反應粘合
  • reaction : n 1 反作用,反應;反沖;反動力。2 【政治學】反動,倒退;復古(運動)。3 【化學】反應,【物理學】...
  • bonding : 冰凍膠結
  1. The results show that, the interfacial bonding strength of new and old concrete is evidence lower than the new or old concrete itself. besides the dimension and roughness of bond interface, the chemical reaction degree at the interface is also the main factor

    分析結果表明:新老混凝土的界面粘結強度除了受老混凝土界面的尺寸及表面結構、粗糙程度影響外,還與新老混凝土粘結界面間發生化學反應的強弱有關。
  2. The melted tungsten carbide would react with the steel matrix on the interface and the reaction zone was observed as a result. the reacting production was examined as fe3w3c by means of x - ray diffraction and scanning electron microscopy analysis. the reaction between tungsten particle and steel matrix could improve the interfacial bonding strength remarkably

    Wc鋼復合材料的制備過程中, wc顆粒在高溫下發生了局部溶解並在wc顆粒和鋼基體界面處發生了界面反應; x射線衍射和電子衍射花樣分析表明,反應產物為高穩定性的fe _ 3w _ 3c ,界面反應有效地改善了wc顆粒與鋼基體的界面結合。
  3. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積,得到了含氮量為21at的cn薄膜;研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響,給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因;引入脈沖輝光放電等離子體增強pld的氣相反應,給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑;應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ,得到了含n量為56at的晶態cn薄膜;探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系,證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果;採用光學發射譜技術對cn薄膜生長過程進行了實時診斷,得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律,給出了cn薄膜沉積的主要反應前驅物,揭示了cn薄膜特性和等離子體內反應過程之間的聯系;採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性,揭示了si原子對薄膜生長過程的影響,給出了si基表面碳氮薄膜的生長模式;在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積,證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性,並可顯著提高晶態碳氮材料的生長速率。
  4. Based on the literature analysis of al matrix in - situ composites by reaction synthesis, it is found that in - situ reaction synthesis processed can ameliorate wettability between reinforcement phase and al matrix alloys and strengthen interfacial bonding and improve mechanical properties of al matrix composites

    對反應生成的原位鋁基復合材料的研究表明,原位反應合成技術可以改善強化相與基體鋁合金之間的潤濕性,強化界面連接,提高材料的綜合機械性能。
  5. The research status quo of diffusion bonding of ceramics to metals is reviewed in this paper, and the emphases are placed on the interface reaction, stress analysis and bonding technology

    本文綜述了陶瓷與金屬擴散連接的研究現狀,重點介紹了界面反應研究、殘余應力分析和連接工藝研究等內容,並在此基礎上指出了研究中所存在的問題。
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