resistance annealing 中文意思是什麼

resistance annealing 解釋
電阻加熱退火
  • resistance : n. 1. 抵抗，反抗，抗拒，抵禦；敵對，抵抗力，反抗力，阻力，【生物學】抗病性。2. 【電學】電阻；阻抗；電阻器。
  • annealing : 熱處理
  1. The effects of baking temperature, baking time and prestrain on the bake hardenability and dent resistance of isotropic sheet steel and bh sheet steel produced by batch annealing were studied

    摘要研究了烘烤溫度、烘烤時間和預拉伸應變量對罩式爐退火工藝生產的各向同性鋼的烘烤硬化性的影響，並與力學性能相當的冷軋烘烤硬化鋼進行了對比。
  2. The properties of lacamno3 films were enhanced dramatically with a post annealing treatment in high temperature and high oxygen pressure. the films show the highest so far tmi, which reaches the 300k, the transition of resistivity is kept in a narrow temperature range and the temperature coefficient of resistance ( tcr ) is about 5 - 8 %

    以高溫、高氧壓的條件對薄膜進行後退火處理，薄膜性質得到極大改善，轉變溫度點提高到了300k ，電阻?溫度系數也達到了5 - 8 ，不僅提高了轉變溫度點，而且使轉變保持在一個較窄的溫度區間內。
  3. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。
  4. We measured the samples " electrical properties ( square resistance, square carrier concentration, carrier mobility and hall coefficient ) at room temperature by hall measurement. the experimental results revealed that all the samples are p - type, with increasing the annealing temperature, the carrier mobility increased and the square carrier concentration decreased. these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing

    所有樣品均為p型導電類型；發現在650到850溫度范圍內，隨著退火溫度的升高，樣品的方塊載流子濃度呈下降趨勢，而載流子遷移率呈上升趨勢；這是由於在退火過程中，隨著退火溫度的升高，有更多的mn參與mnas相的形成，使得以替位受主形式存在的mn減少，並且晶格缺陷得到恢復所致。
  5. Because the contact resistance between the metal contacts and the superconducting films has large impact on the performance of superconducting filters, we experimental techniques. after annealing the optimum temperature and, we got the minimum contact resisitivity. we also further studied the interaction between ag and ybco films after annealing at a certain temperature and attempted to give an explanation and discussion

    金屬接觸電極與超導薄膜之間的接觸電阻對超導濾波器的插入損耗有很大影響，因此，本文通過多種實驗方法，系統的研究了ag與ybco超導薄膜之間的接觸電阻問題，得到了最佳退火溫度，並對退火時ag與ybco超導薄膜之間相互作用的機理進行了研究和探討。
  6. Then, the effect of vacuum annealing temperature on vo _ 2 thin film phase transition temperature, magnitude of resistance change and hysteresis width by doping zr ~ ( 4 + ) was discussed

    （ 2 ）本文以摻鋯為例，探討了不同的真空退火溫度對vo _ 2薄膜的相變溫度、電阻突變數量級以及熱滯寬度有何影響。
  7. Optimization of intermediate annealing for fatigue damaged samples by electric resistance variation

    從電阻變化規律看疲勞損傷件中間退火最佳時機
  8. Sdudy on annealing character of fatigue life gage and load spectrum calculation by its electrical resistance change response

    疲勞壽命計退火特性及電阻變化推算載荷譜的研究
  9. Secondly, we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration, square resistance and carrier mobility ). after comparing and analyzing, we can know that the electrical properties were affected by the difference of mn dose, the implantation of c and the annealing temperature

    其次，利用霍爾測試方法測量了每種離子注入樣品的電性質（方塊載流子濃度、方塊電阻及載流子遷移率） ，通過比較分析了解到mn元素注入劑量、 c元素的注入以及退火溫度的不同，都會對樣品的電性質產生影響。
  10. Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature, in the range of the annealing temperature from 650 ? to 850 ?, which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing. furthermore, the square carrier concentration decreased, and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature. these results indicated that the second phase such as mnga, mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature, so the mn + ions which can provide carriers decreased

    由實驗結果可以知道在退火溫度為650 850范圍內，樣品的載流子遷移率隨著退火溫度的提高呈上升趨勢，說明雜質元素的注入對樣品造成晶格損傷，但退火對這些損傷具有修復作用；此外，隨著退火溫度的上升，樣品的方塊載流子濃度不斷下降，加c樣品的方塊電阻不斷上升，這都是因為隨著退火溫度的提高，摻入的mn ~ +離子不再提供載流子，而是形成了mnga 、 mnas等磁性第二相。
  11. The contact resistance reduces to the minimum level of 6. 6 10 - 6. cm2 after annealing for 1min at 900 ; the deposition of ni / au on algan is demonstrated for a good schottky contact performance, the leakage current is at a low level of 10 - 8a

    首先，極化效應是iii - n化合物異于其他iii - v化合物的最大特徵，因此對algan / gan異質結極化效應進行了分析。
  12. By using a triangle three - section contact type resistance short - circuit continuous annealing technology, it is possible to save power, and to functionally follow the drawing speed, having the advanced capacity of zero annealing

    採用緊湊的三角形，三段接觸式電阻短路連續退火工藝，高效節能，並能函數自動跟蹤拉絲速度，具有先進的零退火功能。
  13. Compared with testing results at different annealing temperatures ranging from 350 to 500 c, it was found that vo _ 2 film annealed at 450 c exhibits lower phase transition temperature and significant resistance change

    通過對比不同退火溫度下的測試結果可知:經450退火后的摻雜vo _ 2薄膜與其它退火溫度所得的vo _ 2薄膜相比，具有較低的相變溫度以及較為明顯的電阻突變數量級。
  14. The results indicates that superconducting mgb2 thin films can be prepared by hfcvd in a single - step with the maximum critical transition temperature tc of 36k ; the best critical transition temperature tc of thin films grown by hpcvd in a single - step is 34k. the optimal zero resistance temperature tco of thin films fabricated ex situ is 37 k by post - annealing of precursor b film at 800 for 1 h under high mg vapor pressure

    實驗結果表明，用hfcvd法在400原位制備了臨界溫度為36k的mgb2超導薄膜；用hpcvd法在700原位制備了臨界溫度為34k的mgb2超導薄膜；將300制備的前驅物b膜在mg蒸氣中800保溫1h非原位退火，制備了臨界溫度為37k的mgb2超導薄膜。
  15. In this paper, the research actuality status of zno thin film ’ s structural character, preparation methods and electrical - optical properties is summarized. the effect of sputtering parameters, annealing parameters and doped sb2o3 on the structure, optical absorption and electrical properties of zno thin film is studied by sem, xrd, xps, eds, uv - vis spectrophotometer, hall effect detector, four - point probe electric resistance measurement and direct - current impedance measurement etc. the results of sem, xrd and edx show that zno thin film possesses good processing stability

    本文在綜述zno薄膜的結構特性、制備方法和光電性能等現狀的基礎上，採用射頻磁控濺射技術制備了純和sb _ 2o _ 3摻雜的zno薄膜，採用sem 、臺階儀、 xrd 、 xps 、 uv - vis分光光度計分析、電阻儀、阻抗譜儀等儀器設備分別研究了濺射工藝參數、退火工藝參數和sb _ 2o _ 3摻雜對zno薄膜結構特性、光吸收性能和電學特性的影響規律。
  16. Ito films with low sheet resistance can be obtained by raising the substrate temperature during deposition or annealing in the inert gases at high temperature

    低電阻率的ito膜可以通過提高沉積時的襯底溫度或高溫退火來獲得。
分享友人
分享到 Line

分享到臉書