rheed 中文意思是什麼

When the thickness increases up to a critical value, about 30 nm, the spotty rheed pattern gradually changes to streaky pattern, and the rheed oscillation curve appears. the rheed pattern of the ultra thin lno film deposited in the relatively high oxygen pressure is streaky pattern. with pumping the oxygen pressure to the relatively low value, the streaky rheed pattern gradually changes to spotty one

我們發現在較低的真空度下，即氧分壓處於2 10 - 4pa和3 10 - 3pa之間， lno晶格中的一個o2 -將會轉移兩個電子給兩個ni3 + ，並且移動到薄膜表面形成o2被泵抽走，從而導致鈣鈦礦結構的垮塌，其相應的rheed圖樣呈現出清晰而明亮的點，表明表面為較為粗糙的三維島狀結構。

When increasing the oxygen pressure, the rheed pattern changes to streaky one again. this rheed pattern transformation induced by the oxygen pressure is reversible. ex situ xps results indicate that the element ni of lno film deposited in the relatively low oxygen pressure with thickness below the critical value exists in the form as ni2 +, while as ni3 + in the relatively high oxygen pressure

隨著膜厚增加而超過約30nm的臨界厚度時，越來越多的晶格氧會移動到了薄膜表面，此時所提供的氧將使得后續生長的lno膜層重新形成鈣鈦礦結構，並以層狀方式外延生長。

The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of

對于碳化工藝，側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響，研究結果表明:隨著碳化時間的增長，碳化層的晶粒尺寸隨之變大，表面粗糙度隨之降低，但當碳化到一定時間之後，碳化反應減緩，碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大，適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時，碳化層的晶粒尺寸隨氣體流量的變化不明顯，但當氣體流量增大到一定程度時，碳化層的晶粒尺寸隨氣體流量的增大而明顯變大，同時，適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時，碳化層的晶粒取向不明顯，隨著碳化溫度的升高，碳化層的晶粒尺寸明顯變大，且有微弱的單晶取向出現，但取向較差，同時，適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ，以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si （ 100 ） ，選用si （ 111 ）作為基片生長的碳化層的晶粒取向一致性明顯更好。

Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or

此外，本文通過反射式高能電子衍射（ rheed ）監測了gasb外延薄膜的生長，利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態，溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析，並與模擬結果進行比較。

Effects of oxygen pressure on microstructure of lno conductive thin film has been studied by in situ reflection high energy diffraction ( rheed ) and ex situ x - ray photoelectron spectroscopy ( xps ). in the relatively low oxygen pressure, lno film displays spotty rheed pattern

首先，通過原位高能電子衍射（ rheed ）及x光電子能譜（ xps ）研究了氧分壓對lno導電薄膜微結構的影響，並進一步提出了氧分壓對lno薄膜微結構的影響的機理。

The ultra - thin er layers with the thicanesses in the range of 0. 5 ~ 3 monolayer ( ml ) are formed by electron beam evaporation on si ( 00l ) substrate at room temperature in an ultra - high vacuum system. after annealing at lower temperatures, ordered simcfores form on the surface. the trallsition of the surface reconsmiction pattem from ( 2 x l ) to ( 4 x 2 ) with the increase of er coverage up to l ml is observed by the reflective high energy electron diffraction ( rheed ) and low energy electron diffraction ( leed )

本文是關于硅（ 001 ）襯底與電子束淀積的鉺、鉿原子反應形成的超薄膜的界面與表面性質的研究，以及在該襯底上出現的共振光電子發射現象，包括了以下四個方面的工作： 1鉺導致的硅（ 001 ）襯底上的（ 4 2 ）再構研究利用反射高能電子衍射和低能電子衍射，在室溫淀積了0

Based on laser molecular beam epitaxy, the strain behavior and the corresponding control technology in oxides heteroepitaxial system, especially in ferroelectric thin films with perovskite structure, was systematically studied by using in situ reflected - high - energy - electron - diffraction ( rheed ). some original and meaningful results were obtained. following aspects were included in this dissertation : the structure of thin films is analyzed by rheed

本論文基於激光分子束外延的基本原理，以高能電子反射為主要監測工具，對氧化物薄膜特別是鐵電氧化物薄膜異質外延過程中應變行為及其控制方法進行了系統的研究，並取得了一系列有意義的結果，主要包括以下內容:利用反射高能電子衍射（ rheed ）的信息對薄膜結構進行分析。

Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。

For system with growth modes transition, different growth stages can be analyzed by different theory respectively, combined with rheed

對于具有生長模式轉變的體系，可以由上述理論結合rheed分析不同階段的應變過程和與之對應的生長模式。

Rheed is a powerful tool to monitor and analyze thin films growth dynamically. the growth modes ( layer - by - layer mode, stranski - krastanov mode, 3d mode, texture, and growth modes transition ) and strain relaxation behaviors ( by measuring and calculating the spacing between chosen diffraction dots or streaks ) can be tracked by rheed from its diffraction patterns and intensity oscillations

從生長模式上看，可以分析如層狀生長，層島結合生長，島狀生長，織構以及這幾種生長模式的轉變過程;從監測應變釋放上看，可以通過精細分析衍射點的間距得到具體的應變釋放過程。

In addtion, the growth rate of low temperature insb buffer layer was 0. 26 m / h, which was obtained by rheed intensity oscillation curves. growth temperature of insb epilayers were investigated with sem and dcxrd, and it was found that the optimum temperature was 440. a 2. 1 m insb layer grown at 440 had an x - ray rocking curve of 412 arcsec, the strain relaxtion was about 99. 02 %

通過掃描電鏡形貌觀察與能譜分析發現:溫度較低時sb的表面遷移率低，容易在表面堆積;結合x射線雙晶衍射分析，確定高溫insb外延生長的最佳襯底溫度為440 ，該溫度下生長2 . 1 m的樣品x射線半高峰寬為412 ，應變弛豫99 . 02 % 。

By using theoretical calculation and rheed monitoring, the strain behavior in heteroepitaxy of ferroelectric oxides thin films was designed and controlled experimentally

通過理論預測和rheed的檢測，控制氧化物薄膜生長，特別是控制鐵電氧化物薄膜生長中的應變行為。

The reflection high - energy electron diffraction ( rheed ) was used to monitor the surface of insb in situ during the epitaxial growth, rheed diffraction pattern indicates volmer - weber growth at the very early stage of nucleation

低溫insb緩沖層在生長初期顯示明顯的島狀生長，通過rheed強度振蕩的觀察，確定低溫insb緩沖層的生長速率為0 . 26 m / h 。

C ( 2x2 ) and ( 2x2 ) reconstructions obtained under different annealing temperthees a - nd different er coverages are observed by rheed observations

不同退火溫度下， ccx2和px2 ）再構被分別觀察到。